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pMOSFET with 200% mobility enhancement induced by multiple stressors

IEEE electron device letters, 2006-06, Vol.27 (6), p.511-513

2006

Volltextzugriff (PDF)

Layout impact on the performance of a locally strained PMOSFET

Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005, 2005, p.22-23

2005

Volltextzugriff (PDF)

Manufacturable Processes for < 32-nm-node CMOS Enhancement by Synchronous Optimization of Strain-Engineered Channel and External Parasitic Resistances

IEEE transactions on electron devices, 2008-05, Vol.55 (5), p.1259-1264

2008

Volltextzugriff (PDF)

A new method for measuring the saturation velocity of submicron CMOS transistors

Solid-state electronics, 1995-04, Vol.38 (4), p.791-793

1995

Volltextzugriff (PDF)

Impact of silicidation on the excess noise behaviour of mos transistors

Solid-state electronics, 1995-11, Vol.38 (11), p.1893-1897

1995

Volltextzugriff (PDF)

Ultrashallow junctions formed by C coimplantation with spike plus submelt laser annealing

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2008-01, Vol.26 (1), p.281-285

2008

Volltextzugriff (PDF)

Productivity enhancement using a methodical approach to defect reduction based on synergy of process and defect metrology knowledge

Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI, 2003, p.9-16

2003

Volltextzugriff (PDF)

On the influence of sputter etch cleaning on the silicidation, the thermal stability and the electrical characteristics of Ti/ p−Si contacts

Solid State Electronics, 1993-05, Vol.36 (5), p.753-759

1993

Volltextzugriff (PDF)

Avoiding dislocations in ion-implanted silicon

ESSDERC '92: 22nd European Solid State Device Research conference, 1992, Vol.19 (1), p.357-362

1992

Volltextzugriff (PDF)

Thermal stability of CoSi2 on submicron polycrystalline silicon lines

Microelectronic engineering, 1992-09, Vol.19 (1-4), p.665-668

1992

Volltextzugriff (PDF)

Analysis of As, P Diffusion and Defect Evolution during Sub-millisecond Non-melt Laser Annealing based on an Atomistic Kinetic Monte Carlo Approach

2007 IEEE International Electron Devices Meeting, 2007, p.955-958

2007

Volltextzugriff (PDF)

A systematic study of trade-offs in engineering a locally strained pMOSFET

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004, 2004, p.1055-1058

2004

Volltextzugriff (PDF)

Analysis of Dopant Diffusion and Defect Evolution during sub-millisecond Non-melt Laser Annealing based on an Atomistic Kinetic Monte Carlo Approach

2006 International Electron Devices Meeting, 2006, p.1-4

2006

Volltextzugriff (PDF)

Advanced 2D/3D simulations for laser annealed device using an atomistic kinetic Monte Carlo approach and Scanning Spreading Resistance Microscopy (SSRM)

2008 IEEE International Electron Devices Meeting, 2008, p.1-4

2008

Volltextzugriff (PDF)

Impact of sub-melt laser annealing on Si1-xGex source /drain defectivity

2007 15th International Conference on Advanced Thermal Processing of Semiconductors, 2007, p.307-315

2007

Volltextzugriff (PDF)

NMOS and PMOS Metal Gate Transistors with Junctions Activated by Laser Annealing

2006 International Symposium on VLSI Technology, Systems, and Applications, 2006, p.1-2

2006

Volltextzugriff (PDF)

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pMOSFET with 200% mobility enhancement induced by multiple stressors

Layout impact on the performance of a locally strained PMOSFET

Manufacturable Processes for < 32-nm-node CMOS Enhancement by Synchronous Optimization of Strain-Engineered Channel and External Parasitic Resistances

A new method for measuring the saturation velocity of submicron CMOS transistors

Impact of silicidation on the excess noise behaviour of mos transistors

Ultrashallow junctions formed by C coimplantation with spike plus submelt laser annealing

Productivity enhancement using a methodical approach to defect reduction based on synergy of process and defect metrology knowledge

On the influence of sputter etch cleaning on the silicidation, the thermal stability and the electrical characteristics of Ti/ p−Si contacts

Avoiding dislocations in ion-implanted silicon

Thermal stability of CoSi2 on submicron polycrystalline silicon lines

Analysis of As, P Diffusion and Defect Evolution during Sub-millisecond Non-melt Laser Annealing based on an Atomistic Kinetic Monte Carlo Approach

A systematic study of trade-offs in engineering a locally strained pMOSFET

Analysis of Dopant Diffusion and Defect Evolution during sub-millisecond Non-melt Laser Annealing based on an Atomistic Kinetic Monte Carlo Approach

Advanced 2D/3D simulations for laser annealed device using an atomistic kinetic Monte Carlo approach and Scanning Spreading Resistance Microscopy (SSRM)

Impact of sub-melt laser annealing on Si1-xGex source /drain defectivity

NMOS and PMOS Metal Gate Transistors with Junctions Activated by Laser Annealing

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