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The role of nickel and titanium in the formation of ohmic contacts on p-type 4H-SiC

Semiconductor science and technology, 2013-04, Vol.28 (4), p.45007

2013

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Study of 4H-SiC JBS Diodes Fabricated with Tungsten Schottky Barrier

Journal of electronic materials, 2011-12, Vol.40 (12), p.2355-2362

2011

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Optical triggering of SiC thyristors using UV LEDs

Electronics letters, 2011-03, Vol.47 (7), p.459-460

2011

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Lifetime of holes determination in 4H-SiC using two-photon optical beam induced current method

2015 International Semiconductor Conference (CAS), 2015, p.259-262

2015

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Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PT-IGBT)

Solid-state electronics, 2009-09, Vol.53 (9), p.944-954

2009

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Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices

2015 International Semiconductor Conference (CAS), 2015, p.145-148

2015

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Vertical termination filled with adequate dielectric for SiC devices in HVDC applications

2015 International Semiconductor Conference (CAS), 2015, p.233-236

2015

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Process Optimization for High Temperature SiC Lateral Devices

Materials science forum, 2009, Vol.615-617, p.585-588

2009

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High-Voltage 4H-SiC Thyristors With a Graded Etched Junction Termination Extension

IEEE electron device letters, 2011-10, Vol.32 (10), p.1421-1423

2011

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Edge termination strategies for a 4 kV 4H-SiC thyristor

Solid-state electronics, 2006-07, Vol.50 (7-8), p.1183-1188

2006

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A 4H-SiC high-power-density VJFET as controlled current limiter

IEEE transactions on industry applications, 2003-09, Vol.39 (5), p.1508-1513

2003

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Investigations on Ni-Ti-Al Ohmic Contacts Obtained on P-Type 4H-SiC

Materials science forum, 2012, Vol.711, p.169-173

2012

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Optical Triggering of 4H-SiC Thyristors with a 365 nm UV LED

Materials science forum, 2011-03, Vol.679-680, p.690-693

2011

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3D TCAD Simulations for More Efficient SiC Power Devices Design

ECS transactions, 2013-08, Vol.58 (4), p.331-339

2013

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(Invited) Perspectives on SiC and III-N Based Devices for Power Electronics

ECS transactions, 2011, Vol.41 (8), p.139-152

2011

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Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects

2014 International Semiconductor Conference (CAS), 2014, p.35-40

2014

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Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection

Materials science forum, 2011-03, Vol.679-680, p.567-570

2011

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Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour

Materials science forum, 2012, Vol.711, p.114-117

2012

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Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applications

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094), 2000, p.287-290

2000

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High Power Density SiC 450A AccuMOSFET for Current Limiting Applications

Materials science forum, 2009, Vol.615-617, p.911-914

2009

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Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses

Materials science forum, 2009-03, Vol.615-617, p.671-674

2009

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A 4H-SiC high power density VJFET as controlled current limiter

Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344), 2002, Vol.3, p.2248-2251 vol.3

2002

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SiC lateral Schottky diode technology for integrated smart power converter

2018 IEEE International Conference on Industrial Technology (ICIT), 2018, p.841-846

2018

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Chemical contribution of oxygen to silicon carbide plasma etching kinetics in a distributed electron cyclotron resonance (DECR) reactor

Journal of electronic materials, 1999-03, Vol.28 (3), p.219-224

1999

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Design and simulation of a planar anode GTO thyristor on SiC

2003 International Semiconductor Conference. CAS 2003 Proceedings (IEEE Cat. No.03TH8676), 2003, Vol.2, p.219-222 Vol. 2

2003

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The role of nickel and titanium in the formation of ohmic contacts on p-type 4H-SiC

Study of 4H-SiC JBS Diodes Fabricated with Tungsten Schottky Barrier

Optical triggering of SiC thyristors using UV LEDs

Lifetime of holes determination in 4H-SiC using two-photon optical beam induced current method

Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PT-IGBT)

Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices

Vertical termination filled with adequate dielectric for SiC devices in HVDC applications

Process Optimization for High Temperature SiC Lateral Devices

High-Voltage 4H-SiC Thyristors With a Graded Etched Junction Termination Extension

Edge termination strategies for a 4 kV 4H-SiC thyristor

A 4H-SiC high-power-density VJFET as controlled current limiter

Investigations on Ni-Ti-Al Ohmic Contacts Obtained on P-Type 4H-SiC

Optical Triggering of 4H-SiC Thyristors with a 365 nm UV LED

3D TCAD Simulations for More Efficient SiC Power Devices Design

(Invited) Perspectives on SiC and III-N Based Devices for Power Electronics

Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects

Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection

Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour

Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applications

High Power Density SiC 450A AccuMOSFET for Current Limiting Applications

Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses

A 4H-SiC high power density VJFET as controlled current limiter

SiC lateral Schottky diode technology for integrated smart power converter

Chemical contribution of oxygen to silicon carbide plasma etching kinetics in a distributed electron cyclotron resonance (DECR) reactor

Design and simulation of a planar anode GTO thyristor on SiC

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