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Decadal and Shorter Period Variability of Surf Zone Water Quality at Huntington Beach, California

Environmental science & technology, 2002-09, Vol.36 (18), p.3885-3892

2002

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High-performance three-layer 1.3-μm InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents

IEEE photonics technology letters, 2005-06, Vol.17 (6), p.1139-1141

2005

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1.3 μm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density

Electronics letters, 2004-10, Vol.40 (22), p.1412-1413

2004

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Systematic Study of the Effects of Modulation p-Doping on 1.3-μm Quantum-Dot Lasers

IEEE journal of quantum electronics, 2007-11, Vol.43 (11-12), p.1129-1139

2007

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Recombination mechanisms in 1.3-μm InAs quantum-dot lasers

IEEE photonics technology letters, 2006-04, Vol.18 (8), p.965-967

2006

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The role of high growth temperature GaAs spacer layers in 1.3-μm In(Ga)As quantum-dot lasers

IEEE photonics technology letters, 2005-10, Vol.17 (10), p.2011-2013

2005

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1.3 μm InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature

Electronics letters, 2006-08, Vol.42 (16), p.922-923

2006

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Improved temperature performance of 1.31-μm quantum dot lasers by optimized ridge waveguide design

IEEE photonics technology letters, 2005-09, Vol.17 (9), p.1785-1787

2005

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Recombination and loss mechanisms in low-threshold InAs-GaAs 1.3- mu m quantum-dot lasers

IEEE journal of selected topics in quantum electronics, 2005-09, Vol.11 (5)

2005

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Reduced temperature sensitivity of lasing wavelength in near-1.3 μm InAs/GaAs quantum-dot laser with stepped composition strain-reducing layer

Electronics letters, 2007-06, Vol.43 (12), p.670-672

2007

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Measurement of modal absorption, gain and recombination in p-doped and intrinsic quantum dot structures

IEE proceedings. Optoelectronics, 2006-12, Vol.153 (6), p.316-320

2006

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Improved performance of 1.3-μm In(Ga)As quantum-dot lasers by modifying the temperature profile of the GaAs spacer layers

IEEE photonics technology letters, 2006-07, Vol.18 (14), p.1557-1559

2006

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The use of Abell–Tersoff potentials in atomistic simulations of InGaAsSb/GaAs

Optical and quantum electronics, 2008-11, Vol.40 (14-15), p.1143-1148

2008

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Systematic Study of the Effects of Modulation P-Doping on 1.3μM InAs/GaAs Dot-in-Well Lasers

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials, 2007, p.517-520

2007

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Empirical bond order potential calculations of the elastic properties of epitaxial InGaSbAs layers

Microelectronics, 2009-03, Vol.40 (3), p.533-536

2009

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The use of Abel-Tersoff potentials in atomistic simulations of InGaAsSb/GaAs

2008 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2008, p.111-112

2008

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Role of Device Structure on the Performance of Quantum Dot Lasers

LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings, 2007, p.435-436

2007

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1.3 μm emitting, self assembled quantum dot lasers

LEOS 2006 - 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2006, p.867-867

2006

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Visual cortex responses to abrupt changes in the periodicity of rapidly intermittent light

Electroencephalography and clinical neurophysiology, 1975-10, Vol.39 (4), p.305-312

1975

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Decadal and Shorter Period Variability of Surf Zone Water Quality at Huntington Beach, California

High-performance three-layer 1.3-μm InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents

1.3 μm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density

Systematic Study of the Effects of Modulation p-Doping on 1.3-μm Quantum-Dot Lasers

Recombination mechanisms in 1.3-μm InAs quantum-dot lasers

The role of high growth temperature GaAs spacer layers in 1.3-μm In(Ga)As quantum-dot lasers

1.3 μm InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature

Improved temperature performance of 1.31-μm quantum dot lasers by optimized ridge waveguide design

Recombination and loss mechanisms in low-threshold InAs-GaAs 1.3- mu m quantum-dot lasers

Reduced temperature sensitivity of lasing wavelength in near-1.3 μm InAs/GaAs quantum-dot laser with stepped composition strain-reducing layer

Measurement of modal absorption, gain and recombination in p-doped and intrinsic quantum dot structures

Improved performance of 1.3-μm In(Ga)As quantum-dot lasers by modifying the temperature profile of the GaAs spacer layers

The use of Abell–Tersoff potentials in atomistic simulations of InGaAsSb/GaAs

Systematic Study of the Effects of Modulation P-Doping on 1.3μM InAs/GaAs Dot-in-Well Lasers

Empirical bond order potential calculations of the elastic properties of epitaxial InGaSbAs layers

The use of Abel-Tersoff potentials in atomistic simulations of InGaAsSb/GaAs

Role of Device Structure on the Performance of Quantum Dot Lasers

1.3 μm emitting, self assembled quantum dot lasers

Visual cortex responses to abrupt changes in the periodicity of rapidly intermittent light

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