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Study of MoN gate impact on GaN high electron mobility transistor

Electronics letters, 2024-05, Vol.60 (10), p.n/a

2024

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Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering

IEEE electron device letters, 2014-05, Vol.35 (5), p.515-517

2014

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InP Drain Engineering in Asymmetric InGaAs/InP MOSFETs

IEEE transactions on electron devices, 2015-02, Vol.62 (2), p.501-506

2015

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Design and Implementation of RF Front-End Module Based on 3D Heterogenous-Integrated Wafer-Level Packaging

Electronics (Basel), 2021-08, Vol.10 (16), p.1893

2021

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Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

Active and passive electronic components, 2017-01, Vol.2017 (2017), p.1-7

2017

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Asymmetric GaN High Electron Mobility Transistors Design with InAlN Barrier at Source Side and AlGaN Barrier at Drain Side

Electronics (Basel), 2024-02, Vol.13 (3), p.653

2024

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Asymmetric InGaAs MOSFETs with InGaAs source and InP drain

26th International Conference on Indium Phosphide and Related Materials (IPRM), 2014, p.1-2

2014

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A Ka-band low power consumption MMIC core chip for T/R modules

International journal of electronics and communications, 2018-07, Vol.91, p.37-43

2018

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A new extraction method of GaN switch-HEMT small-signal model with capacitance scanning algorithm

IEICE Electronics Express, 2024-09, Vol.21 (17), p.20240348-20240348, Article 21.20240348

2024

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A multiplicator ZCS turn on boost converter with high-efficiency and high-voltage-gain

IEICE Electronics Express, 2022-02, Vol.19 (3), p.20210410-20210410, Article 19.20210410

2022

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A Blind Calibration Model for I/Q Imbalances of Wideband Zero-IF Receivers

Electronics (Basel), 2020-11, Vol.9 (11), p.1868

2020

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A highly linear 10 Gb/s MOS current mode logic driver with large output voltage swing based on an active inductor

IEICE Electronics Express, 2020-06, Vol.17 (11), p.20200160-20200160

2020

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A 11 mW 2.4 GHz 0.18 mu m CMOS Transceivers for Wireless Sensor Networks

Sensors (Basel, Switzerland), 2017-02, Vol.17 (2), p.223-223

2017

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Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation

Journal of electronic testing, 2017-04, Vol.33 (2), p.255-259

2017

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X-Band High-Efficiency Continuous Class B Power Amplifier GaN MMIC Assisted by Input Second-Harmonic Tuning

Electronics (Basel), 2019-11, Vol.8 (11), p.1312

2019

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Design of a broadband Ka-band MMIC LNA using deep negative feedback loop

IEICE Electronics Express, 2018, Vol.15 (10), p.20180317-20180317

2018

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A new meshing criterion for the equivalent thermal analysis of GaAs PHEMT MMICs

Microelectronics and reliability, 2017-01, Vol.68, p.30-38

2017

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High Frequency InGaAs MOSFET with Nitride Sidewall Design for Low Power Application

Journal of sensors, 2017-01, Vol.2017 (2017), p.1-9

2017

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4–20 GHz low noise amplifier MMIC with on-chip switchable gate biasing circuit

IEICE Electronics Express, 2017, Vol.14 (18), p.20170711-20170711

2017

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MMIC on-Wafer Test Method Based on Hybrid Balanced and Unbalanced RF Pad Structures

Electronics (Basel), 2018-09, Vol.7 (9), p.208

2018

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A New Capacitance-to-Frequency Converter for On-Chip Capacitance Measurement and Calibration in CMOS Technology

Journal of electronic testing, 2016-06, Vol.32 (3), p.393-397

2016

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All-in-One Wafer-Level Solution for MMIC Automatic Testing

Electronics (Basel), 2018-05, Vol.7 (5), p.57

2018

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In GaAs MOSFETs with InP Drain

72nd Annual Device Research Conference (DRC),2014-06-22 - 2014-06-25, 2014, p.119

2014

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Characterization of border traps in III-V MOSFETs using an RF transconductance method

2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2013, p.53-56

2013

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Effect of Gate Voltage Stress on InGaAs MOSFET With HfO2 or Al2O3 Dielectric

IEEE transactions on device and materials reliability, 2016-06, Vol.16 (2), p.112-116

2016

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Study of MoN gate impact on GaN high electron mobility transistor

Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering

InP Drain Engineering in Asymmetric InGaAs/InP MOSFETs

Design and Implementation of RF Front-End Module Based on 3D Heterogenous-Integrated Wafer-Level Packaging

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

Asymmetric GaN High Electron Mobility Transistors Design with InAlN Barrier at Source Side and AlGaN Barrier at Drain Side

Asymmetric InGaAs MOSFETs with InGaAs source and InP drain

A Ka-band low power consumption MMIC core chip for T/R modules

A new extraction method of GaN switch-HEMT small-signal model with capacitance scanning algorithm

A multiplicator ZCS turn on boost converter with high-efficiency and high-voltage-gain

A Blind Calibration Model for I/Q Imbalances of Wideband Zero-IF Receivers

A highly linear 10 Gb/s MOS current mode logic driver with large output voltage swing based on an active inductor

A 11 mW 2.4 GHz 0.18 mu m CMOS Transceivers for Wireless Sensor Networks

Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation

X-Band High-Efficiency Continuous Class B Power Amplifier GaN MMIC Assisted by Input Second-Harmonic Tuning

Design of a broadband Ka-band MMIC LNA using deep negative feedback loop

A new meshing criterion for the equivalent thermal analysis of GaAs PHEMT MMICs

High Frequency InGaAs MOSFET with Nitride Sidewall Design for Low Power Application

4–20 GHz low noise amplifier MMIC with on-chip switchable gate biasing circuit

MMIC on-Wafer Test Method Based on Hybrid Balanced and Unbalanced RF Pad Structures

A New Capacitance-to-Frequency Converter for On-Chip Capacitance Measurement and Calibration in CMOS Technology

All-in-One Wafer-Level Solution for MMIC Automatic Testing

In GaAs MOSFETs with InP Drain

Characterization of border traps in III-V MOSFETs using an RF transconductance method

Effect of Gate Voltage Stress on InGaAs MOSFET With HfO2 or Al2O3 Dielectric

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