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Numerical Study of Quantum-Dot-Embedded Solar Cells

IEEE journal of selected topics in quantum electronics, 2013-09, Vol.19 (5), p.1-10

2013

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Novel Stepped-Width Design Concept for Compact Multimode-Interference Couplers With Low Cross-Coupling Ratio

IEEE photonics technology letters, 2007-02, Vol.19 (4), p.224-226

2007

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A Superlattice Infrared Photodetector Integrated With Multiple Quantum Wells to Improve the Performance

IEEE journal of quantum electronics, 2007-01, Vol.43 (1), p.72-77

2007

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High-coupling tapered hyperbolic fiber microlens and taper asymmetry effect

Journal of lightwave technology, 2004-05, Vol.22 (5), p.1395-1401

2004

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Empirical model including band-to-band Coulomb interaction for refractive indices of GaAs and InP-based materials at photon energies near and above the band-gap

Physica status solidi. C, 2006-03, Vol.3 (3), p.688-692

2006

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Effect of well width and modulation-doping distributions on spectral characteristics for asymmetric multiple quantum wells

Physica status solidi. C, 2006-03, Vol.3 (3), p.679-682

2006

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1.55-μm non-anti-reflection-coated fiber grating laser for single-longitudinal mode operation

Optical and quantum electronics, 2002-07, Vol.34 (7), p.687-696

2002

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Correlated bilayer electron states

Semiconductor science and technology, 1996-11, Vol.11 (11S), p.1539-1545

1996

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Energy-band parameters at the GaAs– and GaN–Ga2O3(Gd2O3) interfaces

Solid-state electronics, 2001-09, Vol.45 (9), p.1679-1682

2001

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Enhanced TE/TM electro-optic effect in vertically coupled InGaAs quantum dots

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM), 2010, p.1-4

2010

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Y-junction and misaligned-stripe diode laser arrays with nonuniform reflective diffraction coupler

IEEE journal of quantum electronics, 1989-04, Vol.25 (4), p.689-695

1989

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C-V and G-V characterisation of Ga2O3(Gd2O3)/GaN capacitor with low interface state density

Electronics letters, 2001-04, Vol.37 (9), p.595

2001

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Electrical characteristics of ultrathin Pt∕Y2O3∕Si capacitor with rapid post-metallisation annealing

Electronics letters, 2002-11, Vol.38 (24), p.1594

2002

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Rapid post-metallization annealing effects on high-k Y2O3/Si capacitor

Solid-state electronics, 2003-06, Vol.47 (6), p.1021-1025

2003

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Properties of Ga2O3(Gd2O3)/GaN metal–insulator–semiconductor diodes

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2000-05, Vol.18 (3), p.1453-1456

2000

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Probing the microscopic compositions at Ga2O3(Gd2O3)/GaAs interface by core level photoelectron spectroscopy

Solid-state electronics, 2001-03, Vol.45 (3), p.423-426

2001

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Probing the electronic structures of III–V-nitride semiconductors by x-ray photoelectron spectroscopy

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2004-05, Vol.22 (3), p.1491-1494

2004

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In(Ga, Al)As quantum dot/wire growth on InP

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2008-05, Vol.26 (3), p.1084-1088

2008

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Energy Band Offsets at a Ga2O3(Gd2O3)-GaAs Interface

MRS proceedings, 1999, Vol.573

1999

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InGaAs self-assembly quantum-dot monolithic integration of Semiconductor optical amplifier and electroabsorption modulator

2010 23rd Annual Meeting of the IEEE Photonics Society, 2010, p.285-286

2010

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Improved modeling of Coulomb-enhanced and Urbach-broadened absorption edge of direct-gap semiconductors for band-parameter extraction

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials, 2007, p.99-102

2007

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Depth profiling the electronic structures at HfO2∕Si interface grown by molecular beam epitaxy

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2005-05, Vol.23 (3), p.1291-1293

2005

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Structural and Optical Characteristics of Strain-mediated InGaAs Quantum Dots

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials, 2007, p.186-189

2007

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Wide Emission Spectra from Multi-stack InGaAs Quantum Dots

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials, 2007, p.194-196

2007

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N-type Modulation-Doped InGaAlAs/InP Strain-Balanced Quantum-Well SOA/Laser Fabricated by a Multi-Step Wet-Etching Process

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials, 2007, p.211-214

2007

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Numerical Study of Quantum-Dot-Embedded Solar Cells

Novel Stepped-Width Design Concept for Compact Multimode-Interference Couplers With Low Cross-Coupling Ratio

A Superlattice Infrared Photodetector Integrated With Multiple Quantum Wells to Improve the Performance

High-coupling tapered hyperbolic fiber microlens and taper asymmetry effect

Empirical model including band-to-band Coulomb interaction for refractive indices of GaAs and InP-based materials at photon energies near and above the band-gap

Effect of well width and modulation-doping distributions on spectral characteristics for asymmetric multiple quantum wells

1.55-μm non-anti-reflection-coated fiber grating laser for single-longitudinal mode operation

Correlated bilayer electron states

Energy-band parameters at the GaAs– and GaN–Ga2O3(Gd2O3) interfaces

Enhanced TE/TM electro-optic effect in vertically coupled InGaAs quantum dots

Y-junction and misaligned-stripe diode laser arrays with nonuniform reflective diffraction coupler

C-V and G-V characterisation of Ga2O3(Gd2O3)/GaN capacitor with low interface state density

Electrical characteristics of ultrathin Pt∕Y2O3∕Si capacitor with rapid post-metallisation annealing

Rapid post-metallization annealing effects on high-k Y2O3/Si capacitor

Properties of Ga2O3(Gd2O3)/GaN metal–insulator–semiconductor diodes

Probing the microscopic compositions at Ga2O3(Gd2O3)/GaAs interface by core level photoelectron spectroscopy

Probing the electronic structures of III–V-nitride semiconductors by x-ray photoelectron spectroscopy

In(Ga, Al)As quantum dot/wire growth on InP

Energy Band Offsets at a Ga2O3(Gd2O3)-GaAs Interface

InGaAs self-assembly quantum-dot monolithic integration of Semiconductor optical amplifier and electroabsorption modulator

Improved modeling of Coulomb-enhanced and Urbach-broadened absorption edge of direct-gap semiconductors for band-parameter extraction

Depth profiling the electronic structures at HfO2∕Si interface grown by molecular beam epitaxy

Structural and Optical Characteristics of Strain-mediated InGaAs Quantum Dots

Wide Emission Spectra from Multi-stack InGaAs Quantum Dots

N-type Modulation-Doped InGaAlAs/InP Strain-Balanced Quantum-Well SOA/Laser Fabricated by a Multi-Step Wet-Etching Process

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