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Process engineering to reduce self-aligned contact failure by reducing process-driven thermal stress on tungsten-dual poly gate stacks in sub-60 nm DRAM devices

Microelectronic engineering, 2012-11, Vol.99, p.33-37

2012

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Flicker Noise Behavior in Resistive Memory Devices With Double-Layered Transition Metal Oxide

IEEE electron device letters, 2013-02, Vol.34 (2), p.244-246

2013

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Effect of the oxygen vacancy gradient in titanium dioxide on the switching direction of bipolar resistive memory

Solid-state electronics, 2011-09, Vol.63 (1), p.115-118

2011

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Vertical double gate Z-RAM technology with remarkable low voltage operation for DRAM application

2010 Symposium on VLSI Technology, 2010, p.163-164

2010

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Investigation of RuTiN and RuTiO diffusion barrier suggested by a new design concept for future high-density memory capacitors

IEEE electron device letters, 2002-04, Vol.23 (4), p.176-178

2002

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Resynchronization of Modified JPEG Using a Power Allocation Scheme in a Direct Sequence CDMA System

ETRI journal, 2002-10, Vol.24 (5), p.405-408

2002

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Two-step rapid thermal annealing (TS-RTA) to suppress out-diffusion of dopants without degrading short channel effect of transistor

IEEE electron device letters, 2000-08, Vol.21 (8), p.376-377

2000

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Dielectric Properties of SrTiO3 Thin Films on SrRuO3 Seed Prepared by Plasma-enhanced Atomic Layer Deposition

ECS transactions, 2009, Vol.16 (5), p.335-339

2009

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Thin Pt layer insertion into the Ru bottom electrode: effects on the surface morphology of a (Ba, Sr)TiO3 dielectric film and on the performance of the TiN barrier in the pt/Ru/TiN/p-Si/Si heterostructure

Semiconductor science and technology, 2002-10, Vol.17 (10), p.1048-1057

2002

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High performance of novel oxygen diffusion barrier materials for future high-density dynamic random access memory devices

IEEE transactions on electron devices, 2002-11, Vol.49 (11), p.1917-1927

2002

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A thin RuOx oxidized layer effect for a sputtered TiN barrier performance in high-density capacitors

Semiconductor science and technology, 2002-06, Vol.17 (6), p.599-606

2002

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Selective epitaxial growth for plugs of high-density devices

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2003-05, Vol.21 (3), p.975-980

2003

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Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

Journal of electronic materials, 2003-08, Vol.32 (8), p.890-898

2003

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Thermal stability of metal electrodes (Pt, Ru, & Ir) on polycrystalline silicon in ferroelectric capacitors

Integrated ferroelectrics, 1997-09, Vol.17 (1-4), p.489-500

1997

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Investigation of the surface modification for Ru and Ruox films using a post-treatment method for high-dielectric applications

Journal of materials science. Materials in electronics, 2003-08, Vol.14 (8), p.511-519

2003

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Crystallographic Orientation Dependent Ferroelectric Characteristics of (Bi3.3,La0.8)Ti3O12 (BLT) Capacitors

Integrated ferroelectrics, 2005-01, Vol.70 (1), p.89-97

2005

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EFFECT OF NITROGEN INCORPORATION ON ELECTRICAL PROPERTIES OF HIGH-K NANOMIXED HfxAlyOz FILM CAPACITORS GROWN ON RU METAL ELECTRODES BY ATOMIC LAYER DEPOSITION

Integrated ferroelectrics, 2005-01, Vol.74 (1), p.131-136

2005

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Amorphous ta-nanocrystalline RuOx diffusion barrier for lower electrode of high density memory devices

Journal of electronic materials, 2001-05, Vol.30 (5), p.493-502

2001

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Reliability of MIM HAO capacitor for 70nm DRAM

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual, 2005, p.686-687

2005

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Electrical properties of MOCVD BST thin films annealed by rapid thermal annealing process

Integrated ferroelectrics, 2001-01, Vol.33 (1-4), p.291-301

2001

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Contact resistance of newly proposed RuTiN and RuTiO diffusion barriers for future high-density memory capacitors

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2003-03, Vol.21 (2), p.919-922

2003

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Performance analysis of the hybrid search code acquisition technique for cellular CDMA systems

The 8th International Conference on Communication Systems, 2002. ICCS 2002, 2002, Vol.1, p.475-479 vol.1

2002

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Metal organic chemical vapor deposition of ru electrode for (ba,sr)tio3 capacitors

Integrated ferroelectrics, 2001-01, Vol.36 (1-4), p.285-294

2001

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Vibration suppression of a cantilever beam using magnetically tuned-mass-damper

Journal of sound and vibration, 2012-12, Vol.331 (26), p.5669-5684

2012

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Vibration Suppression of a Cantilever Plate Using Magnetically Multimode Tuned Mass Dampers

Shock and vibration, 2018-01, Vol.2018 (2018), p.1-13

2018

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Process engineering to reduce self-aligned contact failure by reducing process-driven thermal stress on tungsten-dual poly gate stacks in sub-60 nm DRAM devices

Flicker Noise Behavior in Resistive Memory Devices With Double-Layered Transition Metal Oxide

Effect of the oxygen vacancy gradient in titanium dioxide on the switching direction of bipolar resistive memory

Vertical double gate Z-RAM technology with remarkable low voltage operation for DRAM application

Investigation of RuTiN and RuTiO diffusion barrier suggested by a new design concept for future high-density memory capacitors

Resynchronization of Modified JPEG Using a Power Allocation Scheme in a Direct Sequence CDMA System

Two-step rapid thermal annealing (TS-RTA) to suppress out-diffusion of dopants without degrading short channel effect of transistor

Dielectric Properties of SrTiO3 Thin Films on SrRuO3 Seed Prepared by Plasma-enhanced Atomic Layer Deposition

Thin Pt layer insertion into the Ru bottom electrode: effects on the surface morphology of a (Ba, Sr)TiO3 dielectric film and on the performance of the TiN barrier in the pt/Ru/TiN/p-Si/Si heterostructure

High performance of novel oxygen diffusion barrier materials for future high-density dynamic random access memory devices

A thin RuOx oxidized layer effect for a sputtered TiN barrier performance in high-density capacitors

Selective epitaxial growth for plugs of high-density devices

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

Thermal stability of metal electrodes (Pt, Ru, & Ir) on polycrystalline silicon in ferroelectric capacitors

Investigation of the surface modification for Ru and Ruox films using a post-treatment method for high-dielectric applications

Crystallographic Orientation Dependent Ferroelectric Characteristics of (Bi3.3,La0.8)Ti3O12 (BLT) Capacitors

EFFECT OF NITROGEN INCORPORATION ON ELECTRICAL PROPERTIES OF HIGH-K NANOMIXED HfxAlyOz FILM CAPACITORS GROWN ON RU METAL ELECTRODES BY ATOMIC LAYER DEPOSITION

Amorphous ta-nanocrystalline RuOx diffusion barrier for lower electrode of high density memory devices

Reliability of MIM HAO capacitor for 70nm DRAM

Electrical properties of MOCVD BST thin films annealed by rapid thermal annealing process

Contact resistance of newly proposed RuTiN and RuTiO diffusion barriers for future high-density memory capacitors

Performance analysis of the hybrid search code acquisition technique for cellular CDMA systems

Metal organic chemical vapor deposition of ru electrode for (ba,sr)tio3 capacitors

Vibration suppression of a cantilever beam using magnetically tuned-mass-damper

Vibration Suppression of a Cantilever Plate Using Magnetically Multimode Tuned Mass Dampers

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