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Growth temperature impact on film quality of hBN grown on Al2O3 using non-catalyzed borazane CVD

Journal of materials science. Materials in electronics, 2017-10, Vol.28 (19), p.14341-14347

2017

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A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium trioxide thin film

Materials science in semiconductor processing, 2015-11, Vol.39, p.582-586

2015

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High-Dynamic-Range Photodetecting Scheme Based on PEPT With a Large Output Swing

IEEE transactions on electron devices, 2012-05, Vol.59 (5), p.1423-1429

2012

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Research on the structural and optical stability of Ga2O3 films deposited by electron beam evaporation

Journal of materials science. Materials in electronics, 2013-12, Vol.24 (12), p.5122-5126

2013

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Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiNx interlayer

Journal of materials science. Materials in electronics, 2013-08, Vol.24 (8), p.2923-2927

2013

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A hydrogel-like form-stable phase change material with high loading efficiency supported by a three dimensional metal–organic network

Chemical engineering journal (Lausanne, Switzerland : 1996), 2021-09, Vol.420, p.129898, Article 129898

2021

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Improvement of the quality of GaN epilayer by combining a SiNx interlayer and changed GaN growth mode

Journal of materials science. Materials in electronics, 2013-08, Vol.24 (8), p.2716-2720

2013

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Rediscovery of the Role of the i-Layer in n-ZnO/SiO2/p-GaN Through Observations from Both the ZnO and GaN Sides

Journal of electronic materials, 2012-12, Vol.41 (12), p.3453-3456

2012

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Band gap broadening and photoluminescence properties investigation in Ga2O3 polycrystal

Journal of materials science. Materials in electronics, 2013-08, Vol.24 (8), p.2750-2754

2013

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Improvement of crystal quality and UV transparence of dielectric Ga2O3 thin films via thermal annealing in N2 atmosphere

Journal of materials science. Materials in electronics, 2012, Vol.23 (2), p.542-545

2012

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Study on the optical properties of β-Ga2O3 films grown by MOCVD

Journal of materials science. Materials in electronics, 2017-08, Vol.28 (15), p.10997-11001

2017

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Effect of annealing on ZnO thin films grown on (001) silicon substrate by low-pressure metalorganic chemical vapour deposition

Semiconductor science and technology, 2004-06, Vol.19 (6), p.755-758

2004

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The lattice distortion of β-Ga2O3 film grown on c-plane sapphire

Journal of materials science. Materials in electronics, 2015-05, Vol.26 (5), p.3231-3235

2015

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Structural and electrical properties of ZnO films on freestanding thick diamond films

Chinese science bulletin, 2008-10, Vol.53 (19), p.2931-2934

2008

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Effect of the magnesium composition on the properties of MgxZn1−xO-based homojunction light-emitting diodes

Semiconductor science and technology, 2008-04, Vol.23 (4), p.045020

2008

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Structural and optoelectrical properties of ZnO thin films deposited on GaAs substrate by metal-organic chemical vapour deposition (MOCVD)

Semiconductor science and technology, 2005-12, Vol.20 (12), p.1198-1202

2005

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Structural, morphological, FTIR and photoluminescence properties of gallium oxide thin films

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2014-05, Vol.32 (3)

2014

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Studying the effect of material parameters on detectivity in a p-n In0.53Ga0.47As photovoltaic detector

Solid-state electronics, 2008, Vol.52 (1), p.11-16

2008

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High-power integrated superluminescent light source

IEEE journal of quantum electronics, 2003-01, Vol.39 (1), p.149-153

2003

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Simulation and fabrication of N-polar GaN-based blue-green light-emitting diodes with p-type AlGaN electron blocking layer

Journal of materials science. Materials in electronics, 2018-06, Vol.29 (11), p.9321-9325

2018

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Improvements of epitaxial quality and stress state of GaN grown on SiC by in situ SiNx interlayer

Journal of materials science. Materials in electronics, 2016-10, Vol.27 (10), p.10003-10009

2016

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Design and fabrication of double AlGaN/GaN distributed Bragg reflector stack mirror for the application of GaN-based optoelectronic devices

Journal of materials science. Materials in electronics, 2019-02, Vol.30 (4), p.3277-3282

2019

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Influence of substrate temperature on the optical properties of Sb-doped ZnO films prepared by MOCVD

Journal of materials science. Materials in electronics, 2017-02, Vol.28 (3), p.2602-2606

2017

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Introducing Ga2O3 thin films as novel electron blocking layer to ZnO/p-GaN heterojunction LED

Applied physics. B, Lasers and optics, 2012-12, Vol.109 (4), p.605-609

2012

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Influence of Cu dopant on the structure and optical properties of ZnO thin films prepared by MOCVD

Journal of materials science. Materials in electronics, 2015-03, Vol.26 (3), p.1591-1596

2015

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Growth temperature impact on film quality of hBN grown on Al2O3 using non-catalyzed borazane CVD

A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium trioxide thin film

High-Dynamic-Range Photodetecting Scheme Based on PEPT With a Large Output Swing

Research on the structural and optical stability of Ga2O3 films deposited by electron beam evaporation

Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiNx interlayer

A hydrogel-like form-stable phase change material with high loading efficiency supported by a three dimensional metal–organic network

Improvement of the quality of GaN epilayer by combining a SiNx interlayer and changed GaN growth mode

Rediscovery of the Role of the i-Layer in n-ZnO/SiO2/p-GaN Through Observations from Both the ZnO and GaN Sides

Band gap broadening and photoluminescence properties investigation in Ga2O3 polycrystal

Improvement of crystal quality and UV transparence of dielectric Ga2O3 thin films via thermal annealing in N2 atmosphere

Study on the optical properties of β-Ga2O3 films grown by MOCVD

Effect of annealing on ZnO thin films grown on (001) silicon substrate by low-pressure metalorganic chemical vapour deposition

The lattice distortion of β-Ga2O3 film grown on c-plane sapphire

Structural and electrical properties of ZnO films on freestanding thick diamond films

Effect of the magnesium composition on the properties of MgxZn1−xO-based homojunction light-emitting diodes

Structural and optoelectrical properties of ZnO thin films deposited on GaAs substrate by metal-organic chemical vapour deposition (MOCVD)

Structural, morphological, FTIR and photoluminescence properties of gallium oxide thin films

Studying the effect of material parameters on detectivity in a p-n In0.53Ga0.47As photovoltaic detector

High-power integrated superluminescent light source

Simulation and fabrication of N-polar GaN-based blue-green light-emitting diodes with p-type AlGaN electron blocking layer

Improvements of epitaxial quality and stress state of GaN grown on SiC by in situ SiNx interlayer

Design and fabrication of double AlGaN/GaN distributed Bragg reflector stack mirror for the application of GaN-based optoelectronic devices

Influence of substrate temperature on the optical properties of Sb-doped ZnO films prepared by MOCVD

Introducing Ga2O3 thin films as novel electron blocking layer to ZnO/p-GaN heterojunction LED

Influence of Cu dopant on the structure and optical properties of ZnO thin films prepared by MOCVD

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