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Si and Ge nanocrystals for future memory devices

Materials science in semiconductor processing, 2012-12, Vol.15 (6), p.615-626

2012

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The generic nature of the Smart-Cut® process for thin film transfer

Journal of electronic materials, 2001-07, Vol.30 (7), p.834-840

2001

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Experiments and simulation of the diffusion and activation of the n-type dopants P, As, and Sb implanted into germanium

Microelectronic engineering, 2011-04, Vol.88 (4), p.458-461

2011

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Laser annealing for n +/p junction formation in germanium

Materials science in semiconductor processing, 2006-08, Vol.9 (4), p.644-649

2006

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Smart solutions for efficient dual strain integration for future FDSOI generations

2016 IEEE Symposium on VLSI Technology, 2016, p.1-2

2016

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Basic mechanisms involved in the Smart-Cut ® process

Microelectronic engineering, 1997-06, Vol.36 (1), p.233-240

1997

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Reduced pressure chemical vapour deposition of SiGe virtual substrates for high mobility devices

Semiconductor science and technology, 2004-03, Vol.19 (3), p.311-318

2004

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Functional Materials: For Energy, Sustainable Development and Biomedical Sciences

1st edition., 2014

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(Invited) Strain Mapping of Layers and Devices Using Electron Holography

ECS transactions, 2010, Vol.33 (6), p.47-58

2010

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Current Understanding and Modeling of B Diffusion and Activation Anomalies in Preamorphized Ultra-Shallow Junctions

MRS proceedings, 2004, Vol.810, Article C3.6

2004

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Thermal evolution of extended defects in implanted Si:: impact on dopant diffusion

Materials science in semiconductor processing, 2000-08, Vol.3 (4), p.269-277

2000

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On the “Life” of {113} Defects

MRS proceedings, 2004, Vol.810, Article C3.7

2004

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The Influence of Thermal Instabilities on the Initial Conditions of the Backdraft Phenomenon

Combustion science and technology, 2010-06, Vol.182 (4-6), p.613-624

2010

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Doping and Mobility Profiles in Defect-Engineered Ultra-shallow Junctions: Bulk and SOI

MRS proceedings, 2004, Vol.810, Article C3.8

2004

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Optimization of Fluorine Co-implantation for PMOS Source and Drain Extension Formation for 65nm Technology Node

MRS proceedings, 2004, Vol.810, Article C5.8

2004

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Channel engineering and junction overlap issues for ultra-shallow junctions formed by SPER in the 45 nm CMOS technology node

MRS proceedings, 2004, Vol.810, Article C10.5

2004

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Effect of Ge-rich Si1−zGez Segregation on the Morphological Stability of NiSi1−uGeu Film Formed on Strained (001) Si0.8Ge0.2 Epilayer

MRS proceedings, 2004, Vol.810

2004

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Electrical profiles of ultra-low energy antimony implants in silicon

MRS proceedings, 2004, Vol.810, Article C5.7

2004

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Ni-Silicided Deep Source/Drain Junctions Formed by Solid Phase Epitaxial Regrowth

MRS proceedings, 2004, Vol.810, Article C2.2

2004

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Relative Stability of Perfect and Faulted Dislocation Loops in Silicon

MRS proceedings, 1999, Vol.568, Article 219

1999

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Technology Computer Aided Design of Ultra-shallow Junctions in Si Devices Formed by Laser Annealing Processes

MRS proceedings, 2004, Vol.810, Article C5.5

2004

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Mechanical simulations of BOX creep for strained FDSOI

2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2017, p.91-94

2017

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A generic approach for inversion of surface reflectance over land: Overview, application and validation using MODIS and LANDSAT8 data

2016 IEEE International Geoscience and Remote Sensing Symposium (IGARSS), 2016, p.1958-1961

2016

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Strained Silicon On Insulator wafers made by the Smart Cut™ technology

MRS proceedings, 2004, Vol.809, Article B2.3

2004

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Ostwald Ripening of {113} Defects Precursors and Transient Enhanced Diffusion

MRS proceedings, 1999, Vol.568, Article 163

1999

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Si and Ge nanocrystals for future memory devices

The generic nature of the Smart-Cut® process for thin film transfer

Experiments and simulation of the diffusion and activation of the n-type dopants P, As, and Sb implanted into germanium

Laser annealing for n +/p junction formation in germanium

Smart solutions for efficient dual strain integration for future FDSOI generations

Basic mechanisms involved in the Smart-Cut ® process

Reduced pressure chemical vapour deposition of SiGe virtual substrates for high mobility devices

Functional Materials: For Energy, Sustainable Development and Biomedical Sciences

(Invited) Strain Mapping of Layers and Devices Using Electron Holography

Current Understanding and Modeling of B Diffusion and Activation Anomalies in Preamorphized Ultra-Shallow Junctions

Thermal evolution of extended defects in implanted Si:: impact on dopant diffusion

On the “Life” of {113} Defects

The Influence of Thermal Instabilities on the Initial Conditions of the Backdraft Phenomenon

Doping and Mobility Profiles in Defect-Engineered Ultra-shallow Junctions: Bulk and SOI

Optimization of Fluorine Co-implantation for PMOS Source and Drain Extension Formation for 65nm Technology Node

Channel engineering and junction overlap issues for ultra-shallow junctions formed by SPER in the 45 nm CMOS technology node

Effect of Ge-rich Si1−zGez Segregation on the Morphological Stability of NiSi1−uGeu Film Formed on Strained (001) Si0.8Ge0.2 Epilayer

Electrical profiles of ultra-low energy antimony implants in silicon

Ni-Silicided Deep Source/Drain Junctions Formed by Solid Phase Epitaxial Regrowth

Relative Stability of Perfect and Faulted Dislocation Loops in Silicon

Technology Computer Aided Design of Ultra-shallow Junctions in Si Devices Formed by Laser Annealing Processes

Mechanical simulations of BOX creep for strained FDSOI

A generic approach for inversion of surface reflectance over land: Overview, application and validation using MODIS and LANDSAT8 data

Strained Silicon On Insulator wafers made by the Smart Cut™ technology

Ostwald Ripening of {113} Defects Precursors and Transient Enhanced Diffusion

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