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A 32-mW 320-MHz continuous-time complex delta-sigma ADC for multi-mode wireless-LAN receivers

IEEE journal of solid-state circuits, 2006-02, Vol.41 (2), p.339-351

2006

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Low-power pipeline ADC for wireless LANs

IEEE journal of solid-state circuits, 2004-08, Vol.39 (8), p.1338-1340

2004

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Conductance transient, capacitance–voltage and deep-level transient spectroscopy characterization of atomic layer deposited hafnium and zirconium oxide thin films

Solid-state electronics, 2003-10, Vol.47 (10), p.1623-1629

2003

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Atomistic Modeling of Point and Extended Defects in Crystalline Materials

MRS proceedings, 1998, Vol.532, Article 43

1998

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Electrical characterization of hafnium oxide and hafnium-rich silicate films grown by atomic layer deposition

Microelectronics and reliability, 2005-05, Vol.45 (5), p.949-952

2005

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Atomistic Analysis of the Role of Silicon Interstitials in Boron Cluster Dissolution

MRS proceedings, 2004, Vol.810, Article C7.3

2004

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Atomistic Modeling of Ion Beam Induced Defects in Si: From Point Defects to Continuous Amorphous Layers

MRS proceedings, 2004, Vol.810, Article C10.1

2004

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Kinetic Monte Carlo simulations: an accurate bridge between ab initio calculations and standard process experimental data

Materials science in semiconductor processing, 2000-03, Vol.3 (1-2), p.59-63

2000

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Monte Carlo Atomistic Simulation of Polycrystalline Aluminum Deposition

MRS proceedings, 1998, Vol.514, Article 127

1998

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Electrical characterization of deep levels existing in Mg-Si- and Mg-P-Si-implanted p+n InP junctions

Semiconductor science and technology, 1998-04, Vol.13 (4), p.389-393

1998

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Atomistic analysis of annealing behavior of amorphous regions

Conference on Electron Devices, 2005 Spanish, 2005, p.427-430

2005

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Interface state density measurement in MOS structures by analysis of the thermally stimulated conductance

Solid-state electronics, 1990-08, Vol.33 (8), p.987-992

1990

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Morphology of as-implanted damage in silicon: a molecular dynamics study

Conference on Electron Devices, 2005 Spanish, 2005, p.447-450

2005

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Electron thermal emission rates of nickel centers in silicon

Solid-state electronics, 1986-09, Vol.29 (9), p.883-884

1986

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Boron redistribution in pre-amorphized Si during thermal annealing

Conference on Electron Devices, 2005 Spanish, 2005, p.431-434

2005

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A new solution for a heart failure monitoring system based on wearable and information technologies

International Workshop on Wearable and Implantable Body Sensor Networks (BSN'06), 2006, p.4 pp.-153

2006

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Rie-induced damage in MOS structures

Solid-state electronics, 1990-11, Vol.33 (11), p.1419-1423

1990

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A comparative study of atomic layer deposited advanced high-k dielectrics

Conference on Electron Devices, 2005 Spanish, 2005, p.29-32

2005

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Validation results of a self-maintained cardiology collaborative tool

Computers in Cardiology, 2005, 2005, p.239-242

2005

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Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions

Conference on Electron Devices, 2005 Spanish, 2005, p.451-454

2005

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A new approach to model the adoption of e-health

MELECON 2006 - 2006 IEEE Mediterranean Electrotechnical Conference, 2006, p.1209-1212

2006

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A physics based approach to ultra-shallow p+-junction formation at the 32nm node

2002

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Atomistic modeling of B activation and deactivation for ultra-shallow junction formation

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003, 2003, p.151-154

2003

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Direct determination of the thermal capture cross-section of majority carriers at deep centers in silicon using thermally stimulated capacitance

Journal of electrostatics, 1977-01, Vol.3 (1), p.251-256

1977

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A 32-mW 320-MHz continuous-time complex delta-sigma ADC for multi-mode wireless-LAN receivers

Low-power pipeline ADC for wireless LANs

Conductance transient, capacitance–voltage and deep-level transient spectroscopy characterization of atomic layer deposited hafnium and zirconium oxide thin films

Atomistic Modeling of Point and Extended Defects in Crystalline Materials

Electrical characterization of hafnium oxide and hafnium-rich silicate films grown by atomic layer deposition

Atomistic Analysis of the Role of Silicon Interstitials in Boron Cluster Dissolution

Atomistic Modeling of Ion Beam Induced Defects in Si: From Point Defects to Continuous Amorphous Layers

Kinetic Monte Carlo simulations: an accurate bridge between ab initio calculations and standard process experimental data

Monte Carlo Atomistic Simulation of Polycrystalline Aluminum Deposition

Electrical characterization of deep levels existing in Mg-Si- and Mg-P-Si-implanted p+n InP junctions

Atomistic analysis of annealing behavior of amorphous regions

Interface state density measurement in MOS structures by analysis of the thermally stimulated conductance

Morphology of as-implanted damage in silicon: a molecular dynamics study

Electron thermal emission rates of nickel centers in silicon

Boron redistribution in pre-amorphized Si during thermal annealing

A new solution for a heart failure monitoring system based on wearable and information technologies

Rie-induced damage in MOS structures

A comparative study of atomic layer deposited advanced high-k dielectrics

Validation results of a self-maintained cardiology collaborative tool

Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions

A new approach to model the adoption of e-health

A physics based approach to ultra-shallow p+-junction formation at the 32nm node

Atomistic modeling of B activation and deactivation for ultra-shallow junction formation

Direct determination of the thermal capture cross-section of majority carriers at deep centers in silicon using thermally stimulated capacitance

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