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A novel dual focus objective lens for DVD/CD pick-up head

IEEE transactions on magnetics, 1998-03, Vol.34 (2), p.462-464

1998

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A laser noise reduction method for holographic pickup heads

IEEE transactions on magnetics, 1998-03, Vol.34 (2), p.474-476, Article 474

1998

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The patent information, strategic patent deployment thinking, and technology strategies of small and medium-sized enterprises

2013 Proceedings of PICMET '13: Technology Management in the IT-Driven Services (PICMET), 2013, p.48-61

2013

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Increasing Controllable Oxygen Ions to Improve Device Performance Using Supercritical Fluid Technique in ZnO-Based Resistive Random Access Memory

IEEE transactions on electron devices, 2022-01, Vol.69 (1), p.127-132

2022

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Impact of Variant Gate Insulator Fabrication Process on Reliability of Dual-Gate InGaZnO Thin-Film Transistors

IEEE transactions on electron devices, 2023-03, Vol.70 (3), p.1089-1094

2023

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Investigation of the Self-Heating Effect in High Performance Organic TFTs With Multi-Finger Structure

IEEE electron device letters, 2022-08, Vol.43 (8), p.1243-1246

2022

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Hydrogen as a Cause of Abnormal Subchannel Formation Under Positive Bias Temperature Stress in a-InGaZnO Thin-Film Transistors

IEEE transactions on electron devices, 2019-07, Vol.66 (7), p.2954-2959

2019

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Enhancing Reliability and 2 mm-Axial Mechanical Bending Endurance by Gate Insulator Improvements in Flexible Polycrystalline Silicon TFTs

IEEE transactions on electron devices, 2022-05, Vol.69 (5), p.2423-2429

2022

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Impact of AC Stress in Low Temperature Polycrystalline Silicon Thin Film Transistors Produced With Different Excimer Laser Annealing Energies

IEEE electron device letters, 2021-06, Vol.42 (6), p.847-850

2021

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Improvement of Hafnium Oxide Resistive Memory Performance Through Low-Temperature Supercritical Oxidation Treatments

IEEE transactions on electron devices, 2021-02, Vol.68 (2), p.541-544

2021

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Role of H2O Molecules in Passivation Layer of a-InGaZnO Thin Film Transistors

IEEE electron device letters, 2017-04, Vol.38 (4), p.469-472

2017

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Degradation Behavior of Etch-Stopper-Layer Structured a-InGaZnO Thin-Film Transistors Under Hot-Carrier Stress and Illumination

IEEE transactions on electron devices, 2021-02, Vol.68 (2), p.556-559

2021

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Enhancement of Mechanical Bending Stress Endurance Using an Organic Trench Structure in Foldable Polycrystalline Silicon TFTs

IEEE electron device letters, 2020-05, Vol.41 (5), p.721-724

2020

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Investigating Material Changes at Different Gadolinium Doping Power Levels in Indium-Tin Oxide Intended for Use as an Insulator in Resistive Switching Memory

IEEE transactions on electron devices, 2019-06, Vol.66 (6), p.2595-2599

2019

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Effects of Redundant Electrode Width on Stability of a-InGaZnO Thin-Film Transistors Under Hot-Carrier Stress

IEEE transactions on electron devices, 2020-06, Vol.67 (6), p.2372-2375

2020

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Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation Annealing

IEEE electron device letters, 2020-03, Vol.41 (3), p.357-360

2020

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Improving Performance by Doping Gadolinium Into the Indium-Tin-Oxide Electrode in HfO2-Based Resistive Random Access Memory

IEEE electron device letters, 2016-05, Vol.37 (5), p.584-587

2016

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Advanced supercritical fluid technique to reduce amorphous silicon defects in heterojunction solar cells

Semiconductor science and technology, 2022-08, Vol.37 (8), p.85011

2022

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Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory

IEEE electron device letters, 2015-06, Vol.36 (6), p.564-566

2015

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Ultralow Power Resistance Random Access Memory Device and Oxygen Accumulation Mechanism in an Indium-Tin-Oxide Electrode

IEEE transactions on electron devices, 2016-12, Vol.63 (12), p.4737-4743

2016

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Super Critical Fluid Technique to Enhance Current Output on Amorphous Silicon-Based Photovoltaic

IEEE electron device letters, 2017-10, Vol.38 (10), p.1401-1404

2017

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Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory

IEEE electron device letters, 2014-05, Vol.35 (5), p.530-532

2014

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Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices

IEEE electron device letters, 2013-05, Vol.34 (5), p.677-679

2013

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Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium-Tin Oxide Insulator in Resistive Random Access Memory

IEEE transactions on electron devices, 2016-12, Vol.63 (12), p.4769-4775

2016

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Influence of Ammonia on Amorphous Carbon Resistive Random Access Memory

IEEE electron device letters, 2017-04, Vol.38 (4), p.453-456

2017

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A novel dual focus objective lens for DVD/CD pick-up head

A laser noise reduction method for holographic pickup heads

The patent information, strategic patent deployment thinking, and technology strategies of small and medium-sized enterprises

Increasing Controllable Oxygen Ions to Improve Device Performance Using Supercritical Fluid Technique in ZnO-Based Resistive Random Access Memory

Impact of Variant Gate Insulator Fabrication Process on Reliability of Dual-Gate InGaZnO Thin-Film Transistors

Investigation of the Self-Heating Effect in High Performance Organic TFTs With Multi-Finger Structure

Hydrogen as a Cause of Abnormal Subchannel Formation Under Positive Bias Temperature Stress in a-InGaZnO Thin-Film Transistors

Enhancing Reliability and 2 mm-Axial Mechanical Bending Endurance by Gate Insulator Improvements in Flexible Polycrystalline Silicon TFTs

Impact of AC Stress in Low Temperature Polycrystalline Silicon Thin Film Transistors Produced With Different Excimer Laser Annealing Energies

Improvement of Hafnium Oxide Resistive Memory Performance Through Low-Temperature Supercritical Oxidation Treatments

Role of H2O Molecules in Passivation Layer of a-InGaZnO Thin Film Transistors

Degradation Behavior of Etch-Stopper-Layer Structured a-InGaZnO Thin-Film Transistors Under Hot-Carrier Stress and Illumination

Enhancement of Mechanical Bending Stress Endurance Using an Organic Trench Structure in Foldable Polycrystalline Silicon TFTs

Investigating Material Changes at Different Gadolinium Doping Power Levels in Indium-Tin Oxide Intended for Use as an Insulator in Resistive Switching Memory

Effects of Redundant Electrode Width on Stability of a-InGaZnO Thin-Film Transistors Under Hot-Carrier Stress

Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation Annealing

Improving Performance by Doping Gadolinium Into the Indium-Tin-Oxide Electrode in HfO2-Based Resistive Random Access Memory

Advanced supercritical fluid technique to reduce amorphous silicon defects in heterojunction solar cells

Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory

Ultralow Power Resistance Random Access Memory Device and Oxygen Accumulation Mechanism in an Indium-Tin-Oxide Electrode

Super Critical Fluid Technique to Enhance Current Output on Amorphous Silicon-Based Photovoltaic

Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory

Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices

Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium-Tin Oxide Insulator in Resistive Random Access Memory

Influence of Ammonia on Amorphous Carbon Resistive Random Access Memory

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