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Fabrication of Vertically Stacked Nanosheet Junctionless Field-Effect Transistors and Applications for the CMOS and CFET Inverters

IEEE transactions on electron devices, 2020-09, Vol.67 (9), p.3504-3509

2020

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Tightly Stacked 3D Diamond-Shaped Ge Nanowire Gate-All-Around FETs With Superior nFET and pFET Performance

IEEE electron device letters, 2021-12, Vol.42 (12), p.1727-1730

2021

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Improving Handover and Drop-off Performance on High-Speed Trains With Multi-RAT

IEEE transactions on intelligent transportation systems, 2014-12, Vol.15 (6), p.2720-2725

2014

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Suspended Diamond-Shaped Nanowire With Four Facets for High-Performance Ge Gate-All-Around FETs

IEEE transactions on electron devices, 2016-10, Vol.63 (10), p.3837-3843

2016

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32-nm Multigate Si-nTFET With Microwave-Annealed Abrupt Junction

IEEE transactions on electron devices, 2016-05, Vol.63 (5), p.1808-1813

2016

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MoS2 U-shape MOSFET with 10 nm channel length and poly-Si source/drain serving as seed for full wafer CVD MoS2 availability

2016 IEEE Symposium on VLSI Technology, 2016, p.1-2

2016

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Low-Temperature-Grown Single-Crystal Si Epitaxially on Ge, Followed by Direct Deposition of High‑κ Dielectrics–Attainment of Low Interfacial Traps and Highly Reliable Ge MOS

ACS applied electronic materials, 2021-05, Vol.3 (5), p.2164-2169

2021

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Sub-nA Low-Current HZO Ferroelectric Tunnel Junction for High-Performance and Accurate Deep Learning Acceleration

2019 IEEE International Electron Devices Meeting (IEDM), 2019, p.6.3.1-6.3.4

2019

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Monolithic 3D SRAM-CIM Macro Fabricated with BEOL Gate-All-Around MOSFETs

2019 IEEE International Electron Devices Meeting (IEDM), 2019, p.3.3.1-3.3.4

2019

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Graphene-Coated Substrate-Mediated Photoresponse from MoS2/UCNP Nanohybrid-Based Photodetectors

ACS applied electronic materials, 2022-11, Vol.4 (11), p.5475-5486

2022

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First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.2101-2107

2022

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Schottky barrier free NiSi/Si junction technology by Yb-implantation for 1xnm CMOS applications

2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2013, p.1-2

2013

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Epitaxial Growth of GaN/AlN on h‑BN/Si(111) by Metal–Organic Chemical Vapor Deposition: An Interface Analysis

ACS applied electronic materials, 2023-01, Vol.5 (1), p.146-154

2023

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Effect of Two-Step Metal Organic Chemical Vapor Deposition Growth on Quality, Diameter and Density of InAs Nanowires on Si (111) Substrate

Journal of electronic materials, 2018-02, Vol.47 (2), p.1071-1079

2018

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Analytical Modeling of Tunnel-Junction Transistor Lasers

IEEE journal of selected topics in quantum electronics, 2022-01, Vol.28 (1: Semiconductor Lasers), p.1-8

2022

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Abnormal Degradation Behaviors Under Negative Bias Stress in Flexible p-Channel Low-Temperature Polycrystalline Silicon Thin-Film Transistors After Laser Lift-Off Process

IEEE transactions on electron devices, 2023-03, Vol.70 (3), p.1079-1084

2023

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Using Artificial Intelligence to Predict Class Loyalty and Plagiarism in Students in an Online Blended Programming Course during the COVID-19 Pandemic

Electronics (Basel), 2021-09, Vol.10 (18), p.2203

2021

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Effects of Ethyl Cellulose on Performance of Titania Photoanode for Dye-sensitized Solar Cells

Journal of electronic materials, 2016-12, Vol.45 (12), p.6192-6199

2016

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Anticipating Daily Intention Using On-wrist Motion Triggered Sensing

2017 IEEE International Conference on Computer Vision (ICCV), 2017, p.48-56

2017

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Analysis of Kirk effect of an innovated high side Side-Isolated N-LDMOS device

MATEC Web of Conferences, 2016, Vol.44, p.2006

2016

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Flexible silicon thin film organic/inorganic hybrid solar cells

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016, p.0685-0687

2016

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Characteristics of Si/SiO2 Interface Properties for CMOS Fabricated on Hybrid Orientation Substrate Using Amorphization/Templated Recrystallization (ATR) Method

IEEE transactions on electron devices, 2011-06, Vol.58 (6), p.1635-1642

2011

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Study of impact of LATID on HCI reliability for LDMOS devices

MATEC Web of Conferences, 2016, Vol.44, p.2007

2016

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A Study On The Dielectric Intrinsic Breakdown Specification

ECS transactions, 2012, Vol.44 (1), p.1137-1144

2012

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Study on High-side LDMOS energy capability Improvement

2016 International Symposium on Semiconductor Manufacturing (ISSM), 2016, p.1-4

2016

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Fabrication of Vertically Stacked Nanosheet Junctionless Field-Effect Transistors and Applications for the CMOS and CFET Inverters

Tightly Stacked 3D Diamond-Shaped Ge Nanowire Gate-All-Around FETs With Superior nFET and pFET Performance

Improving Handover and Drop-off Performance on High-Speed Trains With Multi-RAT

Suspended Diamond-Shaped Nanowire With Four Facets for High-Performance Ge Gate-All-Around FETs

32-nm Multigate Si-nTFET With Microwave-Annealed Abrupt Junction

MoS2 U-shape MOSFET with 10 nm channel length and poly-Si source/drain serving as seed for full wafer CVD MoS2 availability

Low-Temperature-Grown Single-Crystal Si Epitaxially on Ge, Followed by Direct Deposition of High‑κ Dielectrics–Attainment of Low Interfacial Traps and Highly Reliable Ge MOS

Sub-nA Low-Current HZO Ferroelectric Tunnel Junction for High-Performance and Accurate Deep Learning Acceleration

Monolithic 3D SRAM-CIM Macro Fabricated with BEOL Gate-All-Around MOSFETs

Graphene-Coated Substrate-Mediated Photoresponse from MoS2/UCNP Nanohybrid-Based Photodetectors

First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications

Schottky barrier free NiSi/Si junction technology by Yb-implantation for 1xnm CMOS applications

Epitaxial Growth of GaN/AlN on h‑BN/Si(111) by Metal–Organic Chemical Vapor Deposition: An Interface Analysis

Effect of Two-Step Metal Organic Chemical Vapor Deposition Growth on Quality, Diameter and Density of InAs Nanowires on Si (111) Substrate

Analytical Modeling of Tunnel-Junction Transistor Lasers

Abnormal Degradation Behaviors Under Negative Bias Stress in Flexible p-Channel Low-Temperature Polycrystalline Silicon Thin-Film Transistors After Laser Lift-Off Process

Using Artificial Intelligence to Predict Class Loyalty and Plagiarism in Students in an Online Blended Programming Course during the COVID-19 Pandemic

Effects of Ethyl Cellulose on Performance of Titania Photoanode for Dye-sensitized Solar Cells

Anticipating Daily Intention Using On-wrist Motion Triggered Sensing

Analysis of Kirk effect of an innovated high side Side-Isolated N-LDMOS device

Flexible silicon thin film organic/inorganic hybrid solar cells

Characteristics of Si/SiO2 Interface Properties for CMOS Fabricated on Hybrid Orientation Substrate Using Amorphization/Templated Recrystallization (ATR) Method

Study of impact of LATID on HCI reliability for LDMOS devices

A Study On The Dielectric Intrinsic Breakdown Specification

Study on High-side LDMOS energy capability Improvement

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