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Durability and Reliability of Semiconductor Devices

MRS proceedings, 1998, Vol.531, Article 371

1998

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Electrochemical Etching in the GaN-Based Technology

MRS proceedings, 1998, Vol.512, Article 513

1998

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The influence of internal mechanical stresses on the GaAs-light-emitting diodes

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors, 1997, p.417-420

1997

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IEEE_Xplore

A Megapixel Matrix Photodetector of the Middle Infrared Range

Journal of communications technology & electronics, 2019-09, Vol.64 (9), p.1011-1015

2019

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Possibilities of increasing the interference immunity of radiothermograph applicator antennas for brain diagnostics

Sensors and actuators. A. Physical., 2022-04, Vol.337, p.113439, Article 113439

2022

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Investigation of the Effect of Thermal Annealing on the Electrical Properties of the Near-Surface Layer of MBE n-HgCdTe Using MIS Techniques

Journal of electronic materials, 2020-05, Vol.49 (5), p.3202-3208

2020

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Influence of As+ Ion Implantation on Properties of MBE HgCdTe Near-Surface Layer Characterized by Metal–Insulator–Semiconductor Techniques

Journal of electronic materials, 2021-04, Vol.50 (4), p.2323-2330

2021

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An Experimental Study of the Dynamic Resistance in Surface Leakage Limited nBn Structures Based on HgCdTe Grown by Molecular Beam Epitaxy

Journal of electronic materials, 2021-08, Vol.50 (8), p.4599-4605

2021

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Admittance of metal-insulator-semiconductor devices based on HgCdTe nBn structures

Semiconductor science and technology, 2020-05, Vol.35 (5), p.55026

2020

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The Discharge Maintained by High-Power Terahertz Radiation in a Nonuniform Gas Flow

Radiophysics and quantum electronics, 2014, Vol.56 (8-9), p.561-565

2014

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Longitudinal Gradient Bend Magnets for the Upgrade of the Swiss Light Source Storage Ring

IEEE transactions on applied superconductivity, 2020-06, Vol.30 (4), p.1-5

2020

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IEEE_Xplore

HgCdTe-Based 640 x 512 Matrix Midwave Infrared Photodetector

Journal of communications technology & electronics, 2020-03, Vol.65 (3), p.316

2020

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Dark Current Components of nB(SL)n Structures Based on HgCdTe for a Wide Range of Bias Voltages

Journal of communications technology & electronics, 2023-12, Vol.68 (Suppl 2), p.S132-S137

2023

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Investigation of Characteristics of MIS Structures Based on MBE n-HgCdTe NBνN Barrier Structures by Admittance Spectroscopy

Journal of communications technology & electronics, 2023-09, Vol.68 (9), p.1036-1039

2023

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MBE-grown MCT hetero- and nanostructures for IR and THz detectors

Opto-electronics review, 2019-09, Vol.27 (3), p.282-290

2019

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Diffusion Limitation of Dark Current in the nBn Structures Based on the MBE HgCdTe

Journal of communications technology & electronics, 2022-03, Vol.67 (3), p.308-312

2022

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384x288 readout integrated circuit for MWIR and LWIR HgCdTe based FPA

Journal of physics. Conference series, 2015-11, Vol.643 (1), p.12055

2015

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Investigation of the Differential Resistance of MIS Structures Based on n-Hg0.78Cd0.22Te with Near-Surface Graded-Gap Layers

Journal of communications technology & electronics, 2021-03, Vol.66 (3), p.337-339

2021

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Capacitive Properties of Metal–Insulator–Semiconductor Systems Based on an HgCdTe nBn Structure Grown by Molecular Beam Epitaxy

Journal of communications technology & electronics, 2019-03, Vol.64 (3), p.289-293

2019

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Scalability of strained-Si nMOSFETs down to 25 nm gate length

IEEE electron device letters, 2003-05, Vol.24 (5), p.351-353

2003

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IEEE_Xplore

Practical implementation of the concept of converted electric vehicle with advanced traction and dynamic performance and environmental safety indicators

IOP conference series. Materials Science and Engineering, 2018-02, Vol.315 (1), p.12026

2018

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Experimental Study of NB[nu]N Barrier Structures Based on MBE n-HgCdTe for MWIR and LWIR Photodetectors

Journal of communications technology & electronics, 2023-03, Vol.68 (3), p.334

2023

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Defect structure of HgCdTe films grown by molecular beam epitaxy on Si substrates

Semiconductor science and technology, 2012-03, Vol.27 (3), p.035001

2012

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Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates

Opto-electronics review, 2012, Vol.20 (4), p.375-378

2012

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Ion-milling-assisted study of defect structure of acceptor-doped HgCdTe heterostructures grown by molecular beam epitaxy

Semiconductor science and technology, 2008-09, Vol.23 (9), p.095001

2008

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Durability and Reliability of Semiconductor Devices

Electrochemical Etching in the GaN-Based Technology

The influence of internal mechanical stresses on the GaAs-light-emitting diodes

A Megapixel Matrix Photodetector of the Middle Infrared Range

Possibilities of increasing the interference immunity of radiothermograph applicator antennas for brain diagnostics

Investigation of the Effect of Thermal Annealing on the Electrical Properties of the Near-Surface Layer of MBE n-HgCdTe Using MIS Techniques

Influence of As+ Ion Implantation on Properties of MBE HgCdTe Near-Surface Layer Characterized by Metal–Insulator–Semiconductor Techniques

An Experimental Study of the Dynamic Resistance in Surface Leakage Limited nBn Structures Based on HgCdTe Grown by Molecular Beam Epitaxy

Admittance of metal-insulator-semiconductor devices based on HgCdTe nBn structures

The Discharge Maintained by High-Power Terahertz Radiation in a Nonuniform Gas Flow

Longitudinal Gradient Bend Magnets for the Upgrade of the Swiss Light Source Storage Ring

HgCdTe-Based 640 x 512 Matrix Midwave Infrared Photodetector

Dark Current Components of nB(SL)n Structures Based on HgCdTe for a Wide Range of Bias Voltages

Investigation of Characteristics of MIS Structures Based on MBE n-HgCdTe NBνN Barrier Structures by Admittance Spectroscopy

MBE-grown MCT hetero- and nanostructures for IR and THz detectors

Diffusion Limitation of Dark Current in the nBn Structures Based on the MBE HgCdTe

384x288 readout integrated circuit for MWIR and LWIR HgCdTe based FPA

Investigation of the Differential Resistance of MIS Structures Based on n-Hg0.78Cd0.22Te with Near-Surface Graded-Gap Layers

Capacitive Properties of Metal–Insulator–Semiconductor Systems Based on an HgCdTe nBn Structure Grown by Molecular Beam Epitaxy

Scalability of strained-Si nMOSFETs down to 25 nm gate length

Practical implementation of the concept of converted electric vehicle with advanced traction and dynamic performance and environmental safety indicators

Experimental Study of NB[nu]N Barrier Structures Based on MBE n-HgCdTe for MWIR and LWIR Photodetectors

Defect structure of HgCdTe films grown by molecular beam epitaxy on Si substrates

Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates

Ion-milling-assisted study of defect structure of acceptor-doped HgCdTe heterostructures grown by molecular beam epitaxy

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