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On the calculation of the quasi-bound-state energies and lifetimes in inverted MOS structures with ultrathin oxides and its application to the direct tunneling current

IEEE transactions on electron devices, 2004-05, Vol.51 (5), p.764-773

2004

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Renormalization group meshes and the discretization of TCAD equations

IEEE transactions on computer-aided design of integrated circuits and systems, 2002-12, Vol.21 (12), p.1425-1433

2002

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Nonequilibrium mesoscopic quantum transport and conductance quantization

Semiconductor science and technology, 2004-04, Vol.19 (4), p.S235-S237

2004

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Quantum transport in a cylindrical sub-0.1 μm silicon-based MOSFET

Solid-state electronics, 2002-03, Vol.46 (3), p.435-444

2002

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Impact of charging on breakdown in deep trench isolation structures [parasitic MOSFET example]

ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003, 2003, p.513-516

2003

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Device modeling in the frame of Project ADEQUAT

Microelectronic engineering, 1996-12, Vol.34 (1), p.67-84

1996

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Energy dissipation in mesoscopic circuits

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003, 2003, p.175-178

2003

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Simulation of substrate currents

International Conference on Simulation of Semiconductor Processes and Devices, 2002, p.79-82

2002

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STATUS OF THE DEVICE SIMULATOR PRISM

Compel, 1991-04, Vol.10 (4), p.631-640

1991

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Quantized logic switch implementation through a superconducting transformer

2009 10th International Conference on Ultimate Integration of Silicon, 2009, p.353-356

2009

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A comparison between various empirical models for TCAD purposes

2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486), 2000, Vol.1, p.315-318 vol.1

2000

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Heterostructures design optimisation

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351), 1998, Vol.1, p.225-228 vol.1

1998

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Quantum transport modeling in mesoscopic structures

2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486), 2000, Vol.1, p.295-300 vol.1

2000

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On the calculation of the quasi-bound-state energies and lifetimes in inverted MOS structures with ultrathin oxides and its application to the direct tunneling current

Renormalization group meshes and the discretization of TCAD equations

Nonequilibrium mesoscopic quantum transport and conductance quantization

Quantum transport in a cylindrical sub-0.1 μm silicon-based MOSFET

Impact of charging on breakdown in deep trench isolation structures [parasitic MOSFET example]

Device modeling in the frame of Project ADEQUAT

Energy dissipation in mesoscopic circuits

Simulation of substrate currents

STATUS OF THE DEVICE SIMULATOR PRISM

Quantized logic switch implementation through a superconducting transformer

A comparison between various empirical models for TCAD purposes

Heterostructures design optimisation

Quantum transport modeling in mesoscopic structures

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