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Simulation of Short-Channel Effects in N- and Ga-Polar AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2011-03, Vol.58 (3), p.704-708

2011

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Effect of Optical Phonon Scattering on the Performance of GaN Transistors

IEEE electron device letters, 2012-05, Vol.33 (5), p.709-711

2012

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Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity

IEEE transactions on electron devices, 2017-08, Vol.64 (8), p.3114-3119

2017

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Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs

IEEE electron device letters, 2014-03, Vol.35 (3), p.312-314

2014

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N-polar GaN epitaxy and high electron mobility transistors

Semiconductor science and technology, 2013-07, Vol.28 (7), p.74009

2013

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X-Band Power and Linearity Performance of Compositionally Graded AlGaN Channel Transistors

IEEE electron device letters, 2018-12, Vol.39 (12), p.1884-1887

2018

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Advantages of Real-Time Closed-Loop Simulation

2021 IEEE IAS Petroleum and Chemical Industry Technical Conference (PCIC), 2021, p.47-56

2021

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Recess-Free Nonalloyed Ohmic Contacts on Graded AlGaN Heterojunction FETs

IEEE electron device letters, 2015-03, Vol.36 (3), p.226-228

2015

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Growth model for plasma-assisted molecular beam epitaxy of N-polar and Ga-polar InxGa1−xN

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-03, Vol.29 (2)

2011

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Prospects for the application of GaN power devices in hybrid electric vehicle drive systems

Semiconductor science and technology, 2013-07, Vol.28 (7), p.74012

2013

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Tunnel Junction-Enabled AlGaN/GaN Heterojunction Bipolar Transistors With All n-Type Contacts

IEEE transactions on electron devices, 2024-10, Vol.71 (10), p.6460-6464

2024

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Delta Doped \beta -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts

IEEE electron device letters, 2018-04, Vol.39 (4), p.568-571

2018

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beta -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz

IEEE electron device letters, 2019-07, Vol.40 (7), p.1052-1055

2019

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Trapping Effects in Si \delta -Doped \beta -Ga2O3 MESFETs on an Fe-Doped \beta -Ga2O3 Substrate

IEEE electron device letters, 2018-07, Vol.39 (7), p.1042-1045

2018

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Design of Transistors Using High-Permittivity Materials

IEEE transactions on electron devices, 2019-02, Vol.66 (2), p.896-900

2019

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Design and Fabrication of Vertical GaN p-n Diode With Step-Etched Triple-Zone Junction Termination Extension

IEEE transactions on electron devices, 2020-09, Vol.67 (9), p.3553-3557

2020

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Deep-Recessed β-Ga₂O₃ Delta-Doped Field-Effect Transistors With In Situ Epitaxial Passivation

IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4813-4819

2020

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Linearity Improvement With AlGaN Polarization- Graded Field Effect Transistors With Low Pressure Chemical Vapor Deposition Grown SiNx Passivation

IEEE electron device letters, 2020-01, Vol.41 (1), p.19-22

2020

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Polarization Engineering of AlGaN/GaN HEMT With Graded InGaN Sub-Channel for High-Linearity X-Band Applications

IEEE electron device letters, 2019-04, Vol.40 (4), p.522-525

2019

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Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors

IEEE transactions on electron devices, 2021-01, Vol.68 (1), p.29-35

2021

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Al0.65Ga0.35N/Al0.4Ga0.6N Micro-Channel Heterojunction Field Effect Transistors With Current Density Over 900 mA/mm

IEEE electron device letters, 2020-05, Vol.41 (5), p.677-680

2020

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High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm

IEEE electron device letters, 2018-02, Vol.39 (2), p.256-259

2018

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Breakdown Voltage Enhancement in ScAlN/GaN High-Electron-Mobility Transistors by High-k Bismuth Zinc Niobate Oxide

IEEE transactions on electron devices, 2021-07, Vol.68 (7), p.3333-3338

2021

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Selectively patterned Mg-doped GaN by SiNx-driven hydrogen injection

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2022-12, Vol.40 (6)

2022

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Depth-resolved cathodoluminescence and surface photovoltage spectroscopies of gallium vacancies in β-Ga2O3 with neutron irradiation and forming gas anneals

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2021-09, Vol.39 (5)

2021

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Simulation of Short-Channel Effects in N- and Ga-Polar AlGaN/GaN HEMTs

Effect of Optical Phonon Scattering on the Performance of GaN Transistors

Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity

Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs

N-polar GaN epitaxy and high electron mobility transistors

X-Band Power and Linearity Performance of Compositionally Graded AlGaN Channel Transistors

Advantages of Real-Time Closed-Loop Simulation

Recess-Free Nonalloyed Ohmic Contacts on Graded AlGaN Heterojunction FETs

Growth model for plasma-assisted molecular beam epitaxy of N-polar and Ga-polar InxGa1−xN

Prospects for the application of GaN power devices in hybrid electric vehicle drive systems

Tunnel Junction-Enabled AlGaN/GaN Heterojunction Bipolar Transistors With All n-Type Contacts

Delta Doped \beta -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts

beta -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz

Trapping Effects in Si \delta -Doped \beta -Ga2O3 MESFETs on an Fe-Doped \beta -Ga2O3 Substrate

Design of Transistors Using High-Permittivity Materials

Design and Fabrication of Vertical GaN p-n Diode With Step-Etched Triple-Zone Junction Termination Extension

Deep-Recessed β-Ga₂O₃ Delta-Doped Field-Effect Transistors With In Situ Epitaxial Passivation

Linearity Improvement With AlGaN Polarization- Graded Field Effect Transistors With Low Pressure Chemical Vapor Deposition Grown SiNx Passivation

Polarization Engineering of AlGaN/GaN HEMT With Graded InGaN Sub-Channel for High-Linearity X-Band Applications

Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors

Al0.65Ga0.35N/Al0.4Ga0.6N Micro-Channel Heterojunction Field Effect Transistors With Current Density Over 900 mA/mm

High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm

Breakdown Voltage Enhancement in ScAlN/GaN High-Electron-Mobility Transistors by High-k Bismuth Zinc Niobate Oxide

Selectively patterned Mg-doped GaN by SiNx-driven hydrogen injection

Depth-resolved cathodoluminescence and surface photovoltage spectroscopies of gallium vacancies in β-Ga2O3 with neutron irradiation and forming gas anneals

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