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Finite Element Analysis for Surface Acoustic Wave Device Characteristic Properties and Sensitivity

Sensors (Basel, Switzerland), 2019-04, Vol.19 (8), p.1749

2019

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Design of a Novel Terahertz Metamaterial Absorber for Sensing Applications

IEEE sensors journal, 2021-10, Vol.21 (20), p.22688-22694

2021

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An investigation of microwave dielectric properties of BaZr0.25Ti0.75O3 and performance of DRA for 5G application

Journal of materials science. Materials in electronics, 2024, Vol.35 (2), p.167, Article 167

2024

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Perturbation Analysis of a Multiple Layer Guided Love Wave Sensor in a Viscoelastic Environment

Sensors (Basel, Switzerland), 2019-10, Vol.19 (20), p.4533

2019

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Fast Buffer Count Estimation in 3D IC Floorplanning

IEEE transactions on circuits and systems. II, Express briefs, 2021-01, Vol.68 (1), p.271-275

2021

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Evidence of room-temperature magnetodielectric effect in brownmillerite KBiFe2O5 through magnetic, complex dielectric, and impedance study

Journal of materials science. Materials in electronics, 2020-09, Vol.31 (18), p.15875-15884

2020

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Dual band Orthogonal Polarized 2-port MIMO Antenna for Cognitive Radio Applications

Advanced electromagnetics, 2024-01, Vol.13 (1), p.1-8

2024

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Exploring weak ferromagnetism and conduction mechanism in the layered oxide BiPbSr2MnO6

Journal of materials science. Materials in electronics, 2021, Vol.32 (1), p.923-931

2021

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TSV- and delay-aware 3D-IC floorplanning

Analog integrated circuits and signal processing, 2016-05, Vol.87 (2), p.235-248

2016

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Structural, magnetic and magnetodielectric study in the layered oxide BiPbSr2MnO6

Journal of materials science. Materials in electronics, 2018-12, Vol.29 (23), p.19985-19993

2018

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DYNAMO: A Cross-Layer Framework for End-to-End QoS and Energy Optimization in Mobile Handheld Devices

IEEE journal on selected areas in communications, 2007-05, Vol.25 (4), p.722-737

2007

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Design of Cascode Mixer Based on Bulk Injection and Switched Biasing Techniques in 180 nm CMOS Process for a High Performance Receiver Front End

Journal of low-power electronics, 2018-03, Vol.14 (1), p.49-56

2018

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Readiness of Magnetic Nanobiosensors for Point-of-Care Commercialization

Journal of electronic materials, 2019-08, Vol.48 (8), p.4749-4761

2019

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Impact of high-k gate dielectric on analog and RF performance of nanoscale DG-MOSFET

Microelectronics, 2014-02, Vol.45 (2), p.144-151

2014

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Prospects of 2D Junctionless Channel Transistor (JLCT) Towards Analog and RF Metrics Using Si and SiGe in Device Layer

Journal of low-power electronics, 2017-09, Vol.13 (3), p.536-544

2017

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Design Equivalent Scaling on Double Gate FinFET Towards Analog and RF Figures of Merits: A Technology Computer Aided Design Estimation

Journal of low-power electronics, 2015-09, Vol.11 (3), p.316-322

2015

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Dynamic nets-to-TSVs assignment in 3D floorplanning

2015 IEEE International Symposium on Circuits and Systems (ISCAS), 2015, p.1870-1873

2015

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The Role of Geometry Parameters and Fin Aspect Ratio of Sub-20nm SOI-FinFET: An Analysis Towards Analog and RF Circuit Design

IEEE transactions on nanotechnology, 2015-05, Vol.14 (3), p.546-554

2015

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A Study of SCEs and Analog FOMs in GS-DG-MOSFET with Lateral Asymmetric Channel Doping

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2013, 13(6), 54, pp.647-654

2013

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Optical, dielectric relaxation and conduction study of Bi2Fe4O9 ceramic

Journal of materials science. Materials in electronics, 2016-04, Vol.27 (4), p.3645-3652

2016

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Estimation of analog/RF figures-of-merit using device design engineering in gate stack double gate MOSFET

Materials science in semiconductor processing, 2015-03, Vol.31, p.455-462

2015

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Memoryless nonlinearity in IT JL FinFET with spacer technology: Investigation towards reliability

Microelectronics and reliability, 2021-04, Vol.119, p.114072, Article 114072

2021

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Zero temperature-coefficient bias point over wide range of temperatures for single- and double-gate UTB-SOI n-MOSFETs with trapped charges

Materials science in semiconductor processing, 2015-03, Vol.31, p.175-183

2015

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Improvement in the ability to block Hg out diffusion from Hg1−xCdxTe by hydrogenation

Semiconductor science and technology, 2006-08, Vol.21 (8), p.998-1001

2006

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RBS study of annealing effects in passivated mercury cadmium telluride

Semiconductor science and technology, 2005-10, Vol.20 (10), p.1072-1077, Article 1072

2005

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Finite Element Analysis for Surface Acoustic Wave Device Characteristic Properties and Sensitivity

Design of a Novel Terahertz Metamaterial Absorber for Sensing Applications

An investigation of microwave dielectric properties of BaZr0.25Ti0.75O3 and performance of DRA for 5G application

Perturbation Analysis of a Multiple Layer Guided Love Wave Sensor in a Viscoelastic Environment

Fast Buffer Count Estimation in 3D IC Floorplanning

Evidence of room-temperature magnetodielectric effect in brownmillerite KBiFe2O5 through magnetic, complex dielectric, and impedance study

Dual band Orthogonal Polarized 2-port MIMO Antenna for Cognitive Radio Applications

Exploring weak ferromagnetism and conduction mechanism in the layered oxide BiPbSr2MnO6

TSV- and delay-aware 3D-IC floorplanning

Structural, magnetic and magnetodielectric study in the layered oxide BiPbSr2MnO6

DYNAMO: A Cross-Layer Framework for End-to-End QoS and Energy Optimization in Mobile Handheld Devices

Design of Cascode Mixer Based on Bulk Injection and Switched Biasing Techniques in 180 nm CMOS Process for a High Performance Receiver Front End

Readiness of Magnetic Nanobiosensors for Point-of-Care Commercialization

Impact of high-k gate dielectric on analog and RF performance of nanoscale DG-MOSFET

Prospects of 2D Junctionless Channel Transistor (JLCT) Towards Analog and RF Metrics Using Si and SiGe in Device Layer

Design Equivalent Scaling on Double Gate FinFET Towards Analog and RF Figures of Merits: A Technology Computer Aided Design Estimation

Dynamic nets-to-TSVs assignment in 3D floorplanning

The Role of Geometry Parameters and Fin Aspect Ratio of Sub-20nm SOI-FinFET: An Analysis Towards Analog and RF Circuit Design

A Study of SCEs and Analog FOMs in GS-DG-MOSFET with Lateral Asymmetric Channel Doping

Optical, dielectric relaxation and conduction study of Bi2Fe4O9 ceramic

Estimation of analog/RF figures-of-merit using device design engineering in gate stack double gate MOSFET

Memoryless nonlinearity in IT JL FinFET with spacer technology: Investigation towards reliability

Zero temperature-coefficient bias point over wide range of temperatures for single- and double-gate UTB-SOI n-MOSFETs with trapped charges

Improvement in the ability to block Hg out diffusion from Hg1−xCdxTe by hydrogenation

RBS study of annealing effects in passivated mercury cadmium telluride

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