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User Activity Detection and Channel Estimation for Grant-Free Random Access in LEO Satellite-Enabled Internet of Things
IEEE internet of things journal, 2020-09, Vol.7 (9), p.8811-8825
2020
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Design and Characterization of High di/dt CS-MCT for Pulse Power Applications
IEEE transactions on electron devices, 2017-10, Vol.64 (10), p.4206-4212
2017
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An Efficient and Reliable Solid-State Circuit Breaker Based on Mixture Device
IEEE transactions on power electronics, 2021-09, Vol.36 (9), p.9767-9771
2021
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A Novel Thyristor-Based Bidirectional SSCB With Controllable Current Breaking Capability
IEEE transactions on power electronics, 2022-04, Vol.37 (4), p.4526-4534
2022
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A Novel Solid-state Circuit Breaker with Robust Breaking Capability and High Efficiency
IEEE transactions on power electronics, 2023-10, Vol.38 (10), p.1-10
2023
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A Compact Model of High-Voltage MOSFET Based on Electric Field Continuity for Accurate Characterization of Capacitance
IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.431-439
2024
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Analysis of Energy Loss in GaN E-Mode Devices Under UIS Stresses
IEEE transactions on power electronics, 2022-06, Vol.37 (6), p.6711-6719
2022
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Numerical Analysis of an Ultralow Switching Loss IGBT With an Inner Primary Blocking Junction
IEEE transactions on electron devices, 2023-03, Vol.70 (3), p.1211-1218
2023
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An Ultralow Loss Reverse-Conducting LIGBT With Embedded P-P-N Diode in Oxide Trench
IEEE transactions on electron devices, 2022-12, Vol.69 (12), p.1-7
2022
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An Ultralow Loss Superjunction Reverse Blocking Insulated-Gate Bipolar Transistor With Shorted-Collector Trench
IEEE electron device letters, 2016-11, Vol.37 (11), p.1462-1465
2016
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Experiments of Sub-micron Superjunction Devices with Ultra-low Specific On-resistance
IEEE electron device letters, 2023-07, Vol.44 (7), p.1-1
2023
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A Snapback Suppressed Reverse-Conducting IGBT With a Floating p-Region in Trench Collector
IEEE electron device letters, 2012-03, Vol.33 (3), p.417-419
2012
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Experimental Demonstration of an Integrated Bidirectional Gate ESD Protection Structure for p-GaN Power HEMTs
IEEE electron device letters, 2023-02, Vol.44 (2), p.209-212
2023
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On the Abnormal Reduction and Recovery of Dynamic RON Under UIS Stress in Schottky p-GaN Gate HEMTs
IEEE transactions on power electronics, 2023-08, Vol.38 (8), p.9347-9350
2023
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Temperature Dependence of Pulsed Power Performance of Insulated Gate Trigger Thyristor
IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.1211-1218
2022
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Voltage Coupling Enhancement for Transient Gate Overvoltage Suppression of Insulated Gate Trigger Thyristor in Ultrahigh di/dt Pulse Applications
IEEE transactions on power electronics, 2021-03, Vol.36 (3), p.3346-3353
2021
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A Novel Insulated Gate Trigger Thyristor Integrated with Gate Transient Voltage Suppressor for Ultrahigh di/dt Pulse Switching
IEEE electron device letters, 2023-10, Vol.44 (10), p.1-1
2023
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Unipolar Conductivity Enhancement and Its Experiments in SOI-LIGBT
IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1-6
2023
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Crosstalk Suppression in Monolithic GaN Devices Based on Inverted E-Field Decoupling
IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.1542-1549
2021
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High Voltage Insulated Gate Trigger Thyristor With High-Efficiency Injection for Fast Turn-on and High Current Pulse
IEEE electron device letters, 2019-12, Vol.40 (12), p.1965-1968
2019
Open Access
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Fixed-Symbol Aided Random Access Scheme for Machine-to-Machine Communications
IEEE access, 2019, Vol.7, p.52913-52928
2019
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Evaluation of CS-MCT in DC Solid-State Circuit Breaker Applications
IEEE transactions on industry applications, 2018-09, Vol.54 (5), p.5465-5473
2018
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Performance Limit and Design Guideline of 4H-SiC Superjunction Devices Considering Anisotropy of Impact Ionization
IEEE electron device letters, 2022-12, Vol.43 (12), p.1-1
2022
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Study on Transient Turn-On Characteristics of Pulse Power Thyristor-Type Devices Under Ultrahigh di/dt Condition
IEEE transactions on electron devices, 2023-02, Vol.70 (2), p.640-646
2023
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High Peak Current MOS Gate-Triggered Thyristor With Fast Turn-On Characteristics for Solid-State Closing Switch Applications
IEEE electron device letters, 2016-02, Vol.37 (2), p.205-208
2016
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