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Fermi pinning-induced thermal instability of metal-gate work functions

IEEE electron device letters, 2004-05, Vol.25 (5), p.337-339

2004

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N-type Schottky barrier source/drain MOSFET using ytterbium silicide

IEEE electron device letters, 2004-08, Vol.25 (8), p.565-567

2004

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Effect of Interface Traps and Oxide Charge on Drain Current Degradation in Tunneling Field-Effect Transistors

IEEE electron device letters, 2010-08, Vol.31 (8), p.779-781

2010

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Si-Nanowire Based Gate-All-Around Nonvolatile SONOS Memory Cell

IEEE electron device letters, 2008-05, Vol.29 (5), p.518-521

2008

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Modeling study of the impact of surface roughness on silicon and Germanium UTB MOSFETs

IEEE transactions on electron devices, 2005-11, Vol.52 (11), p.2430-2439

2005

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Unequally Spaced Waveguide Arrays for Silicon Nanomembrane-Based Efficient Large Angle Optical Beam Steering

IEEE journal of selected topics in quantum electronics, 2009-09, Vol.15 (5), p.1439-1446

2009

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Random Telegraph Signal Noise in Gate-All-Around Si-FinFET With Ultranarrow Body

IEEE electron device letters, 2006-09, Vol.27 (9), p.765-768

2006

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Global Rate-Distortion Optimization-Based Rate Control for HEVC HDR Coding

IEEE transactions on circuits and systems for video technology, 2020-12, Vol.30 (12), p.4648-4662

2020

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Physical and electrical characteristics of HfN gate electrode for advanced MOS devices

IEEE electron device letters, 2003-04, Vol.24 (4), p.230-232

2003

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Schottky-barrier S/D MOSFETs with high-k gate dielectrics and metal-gate electrode

IEEE electron device letters, 2004-05, Vol.25 (5), p.268-270

2004

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Germanium pMOSFETs with Schottky-Barrier germanide S/D, high-κ gate dielectric and metal gate

IEEE electron device letters, 2005-02, Vol.26 (2), p.81-83

2005

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Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETs

IEEE electron device letters, 2006-01, Vol.27 (1), p.31-33

2006

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Monte Carlo simulation of p- and n-channel GOI MOSFETs by solving the quantum Boltzmann equation

IEEE transactions on electron devices, 2005-10, Vol.52 (10), p.2258-2264

2005

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Thermally robust HfN metal as a promising gate electrode for advanced MOS device applications

IEEE transactions on electron devices, 2004-04, Vol.51 (4), p.609-615

2004

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Data-Driven Rate Control for Rate-Distortion Optimization in HEVC Based on Simplified Effective Initial QP Learning

IEEE transactions on broadcasting, 2019-03, Vol.65 (1), p.94-108

2019

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Low-Temperature Transport Characteristics and Quantum-Confinement Effects in Gate-All-Around Si-Nanowire N-MOSFET

IEEE electron device letters, 2007-10, Vol.28 (10), p.909-912

2007

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Integrated antennas on Si with over 100 GHz performance, fabricated using an optimized proton implantation process

IEEE microwave and wireless components letters, 2003-11, Vol.13 (11), p.487-489

2003

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Polycrystalline Si Nanowire SONOS Nonvolatile Memory Cell Fabricated on a Gate-All-Around (GAA) Channel Architecture

IEEE electron device letters, 2009-03, Vol.30 (3), p.246-249

2009

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Fast DNBTI components in p-MOSFET with SiON dielectric

IEEE electron device letters, 2005-11, Vol.26 (11), p.826-828

2005

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Experimental Studies of Reliability Issues in Tunneling Field-Effect Transistors

IEEE electron device letters, 2010-05, Vol.31 (5), p.396-398

2010

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Thermo-Optical Enhanced Silicon Wire Interleavers

IEEE photonics technology letters, 2008-12, Vol.20 (24), p.2165-2167

2008

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Metal gate work function engineering on gate leakage of MOSFETs

IEEE transactions on electron devices, 2004-11, Vol.51 (11), p.1783-1789

2004

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Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric

IEEE electron device letters, 2005-10, Vol.26 (10), p.758-760

2005

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A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation

IEEE electron device letters, 2004-09, Vol.25 (9), p.631-633

2004

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Impact of Local Strain From Selective Epitaxial Germanium With Thin Si/SiGe Buffer on High-Performance p-i-n Photodetectors With a Low Thermal Budget

IEEE electron device letters, 2007-11, Vol.28 (11), p.984-986

2007

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Fermi pinning-induced thermal instability of metal-gate work functions

N-type Schottky barrier source/drain MOSFET using ytterbium silicide

Effect of Interface Traps and Oxide Charge on Drain Current Degradation in Tunneling Field-Effect Transistors

Si-Nanowire Based Gate-All-Around Nonvolatile SONOS Memory Cell

Modeling study of the impact of surface roughness on silicon and Germanium UTB MOSFETs

Unequally Spaced Waveguide Arrays for Silicon Nanomembrane-Based Efficient Large Angle Optical Beam Steering

Random Telegraph Signal Noise in Gate-All-Around Si-FinFET With Ultranarrow Body

Global Rate-Distortion Optimization-Based Rate Control for HEVC HDR Coding

Physical and electrical characteristics of HfN gate electrode for advanced MOS devices

Schottky-barrier S/D MOSFETs with high-k gate dielectrics and metal-gate electrode

Germanium pMOSFETs with Schottky-Barrier germanide S/D, high-κ gate dielectric and metal gate

Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETs

Monte Carlo simulation of p- and n-channel GOI MOSFETs by solving the quantum Boltzmann equation

Thermally robust HfN metal as a promising gate electrode for advanced MOS device applications

Data-Driven Rate Control for Rate-Distortion Optimization in HEVC Based on Simplified Effective Initial QP Learning

Low-Temperature Transport Characteristics and Quantum-Confinement Effects in Gate-All-Around Si-Nanowire N-MOSFET

Integrated antennas on Si with over 100 GHz performance, fabricated using an optimized proton implantation process

Polycrystalline Si Nanowire SONOS Nonvolatile Memory Cell Fabricated on a Gate-All-Around (GAA) Channel Architecture

Fast DNBTI components in p-MOSFET with SiON dielectric

Experimental Studies of Reliability Issues in Tunneling Field-Effect Transistors

Thermo-Optical Enhanced Silicon Wire Interleavers

Metal gate work function engineering on gate leakage of MOSFETs

Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric

A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation

Impact of Local Strain From Selective Epitaxial Germanium With Thin Si/SiGe Buffer on High-Performance p-i-n Photodetectors With a Low Thermal Budget

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