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Activation of Mg implanted in GaN by multicycle rapid thermal annealing

Electronics letters, 2014-01, Vol.50 (3), p.197-198

2014

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Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films

IEEE electron device letters, 2012-01, Vol.33 (1), p.23-25

2012

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A Simple Edge Termination Design for Vertical GaN P-N Diodes

IEEE transactions on electron devices, 2022-09, Vol.69 (9), p.5096-5103

2022

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Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.1864-1870

2008

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Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance

IEEE transactions on electron devices, 2024-06, Vol.71 (6), p.3552-3559

2024

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Effect of GaN Substrate Properties on Vertical GaN PiN Diode Electrical Performance

Journal of electronic materials, 2021-06, Vol.50 (6), p.3013-3021

2021

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An AlN/Ultrathin AlGaN/GaN HEMT Structure for Enhancement-Mode Operation Using Selective Etching

IEEE electron device letters, 2009-12, Vol.30 (12), p.1251-1253

2009

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Full thermal characterization of AlGaN/GaN high electron mobility transistors on silicon, silicon carbide, and diamond substrates using a reverse modeling approach

Semiconductor science and technology, 2021-01, Vol.36 (1), p.14008

2021

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Application of a Focused, Pulsed X-Ray Beam to the Investigation of Single-Event Transients in Al0.3Ga0.7N/GaN HEMTs

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.97-105

2017

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A Study on the Impact of Mid-Gap Defects on Vertical GaN Diodes

IEEE transactions on semiconductor manufacturing, 2020-11, Vol.33 (4), p.546-551

2020

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Investigation of the Epitaxial Graphene/p-SiC Heterojunction

IEEE electron device letters, 2012-11, Vol.33 (11), p.1610-1612

2012

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Characterization of Recessed-Gate AlGaN/GaN HEMTs as a Function of Etch Depth

Journal of electronic materials, 2010-05, Vol.39 (5), p.478-481

2010

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Reduced Contact Resistance in GaN Using Selective Area Si Ion Implantation

IEEE transactions on semiconductor manufacturing, 2019-11, Vol.32 (4), p.478-482

2019

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High-Performance Smoothly Tapered Junction Termination Extensions for High-Voltage 4H-SiC Devices

IEEE transactions on electron devices, 2011-10, Vol.58 (10), p.3395-3400

2011

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SiC Wafer Bonding and Deep Reactive Ion Etching Towards High-Aspect Ratio SiC MEMS Fabrication

ECS transactions, 2018, Vol.86 (5), p.105-110

2018

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Advances in AlGaN/GaN HEMT Surface Passivation

ECS transactions, 2016, Vol.75 (12), p.99-105

2016

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(Invited) SOI-Type Bonded Structures for Advanced Technology Nodes

ECS transactions, 2014-08, Vol.64 (5), p.35-48

2014

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(Invited) Improved Vertical GaN Diodes with Mg Ion Implanted Junction Termination Extension

ECS transactions, 2016, Vol.75 (12), p.93-97

2016

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(Invited) Integration of Diamond with GaN for Thermal Management in High Power Applications

ECS transactions, 2018, Vol.86 (9), p.9-14

2018

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Characterization and Modeling of a 1.3 kV Vertical GaN Diode

2022 IEEE Applied Power Electronics Conference and Exposition (APEC), 2022, p.928-935

2022

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Chemical Mechanical Polishing and Direct Bonding of YAG

ECS transactions, 2018, Vol.86 (5), p.217-222

2018

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Multilayer Thin Film Getter for Sustainable Vacuum in MEMS Packaging

ECS transactions, 2018, Vol.86 (5), p.95-104

2018

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Electrical Characteristics of Solder-Free SiC Die/Metal Foil/AlN Plate Junctions Fabricated Using Surface Activated Bonding

ECS transactions, 2018-07, Vol.86 (5), p.137-142

2018

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Influence of Composition of SiCN Film for Surface Activated Bonding

ECS transactions, 2018, Vol.86 (5), p.159-168

2018

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(Invited) Electrothermal Performance Optimization of III-Nitride HEMTs Capped with Nanocrystalline Diamond

ECS transactions, 2016, Vol.72 (5), p.3-8

2016

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Activation of Mg implanted in GaN by multicycle rapid thermal annealing

Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films

A Simple Edge Termination Design for Vertical GaN P-N Diodes

Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers

Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance

Effect of GaN Substrate Properties on Vertical GaN PiN Diode Electrical Performance

An AlN/Ultrathin AlGaN/GaN HEMT Structure for Enhancement-Mode Operation Using Selective Etching

Full thermal characterization of AlGaN/GaN high electron mobility transistors on silicon, silicon carbide, and diamond substrates using a reverse modeling approach

Application of a Focused, Pulsed X-Ray Beam to the Investigation of Single-Event Transients in Al0.3Ga0.7N/GaN HEMTs

A Study on the Impact of Mid-Gap Defects on Vertical GaN Diodes

Investigation of the Epitaxial Graphene/p-SiC Heterojunction

Characterization of Recessed-Gate AlGaN/GaN HEMTs as a Function of Etch Depth

Reduced Contact Resistance in GaN Using Selective Area Si Ion Implantation

High-Performance Smoothly Tapered Junction Termination Extensions for High-Voltage 4H-SiC Devices

SiC Wafer Bonding and Deep Reactive Ion Etching Towards High-Aspect Ratio SiC MEMS Fabrication

Advances in AlGaN/GaN HEMT Surface Passivation

(Invited) SOI-Type Bonded Structures for Advanced Technology Nodes

(Invited) Improved Vertical GaN Diodes with Mg Ion Implanted Junction Termination Extension

(Invited) Integration of Diamond with GaN for Thermal Management in High Power Applications

Characterization and Modeling of a 1.3 kV Vertical GaN Diode

Chemical Mechanical Polishing and Direct Bonding of YAG

Multilayer Thin Film Getter for Sustainable Vacuum in MEMS Packaging

Electrical Characteristics of Solder-Free SiC Die/Metal Foil/AlN Plate Junctions Fabricated Using Surface Activated Bonding

Influence of Composition of SiCN Film for Surface Activated Bonding

(Invited) Electrothermal Performance Optimization of III-Nitride HEMTs Capped with Nanocrystalline Diamond

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