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Radiation Effects in MOS Oxides

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.1833-1853

2008

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Production and propagation of single-event transients in high-speed digital logic ICs

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3278-3284

2004

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Impact of Ion Energy and Species on Single Event Effects Analysis

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2312-2321

2007

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Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2303-2311

2007

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New Insights Into Single Event Transient Propagation in Chains of Inverters-Evidence for Propagation-Induced Pulse Broadening

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2338-2346

2007

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Effects of particle energy on proton-induced single-event latchup

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2622-2629

2005

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Single-Event Upsets and Multiple-Bit Upsets on a 45 nm SOI SRAM

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3499-3504

2009

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Enhanced Degradation in Power MOSFET Devices Due to Heavy Ion Irradiation

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2181-2189

2007

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Total Ionizing Dose and Single Event Effects Hardness Assurance Qualification Issues for Microelectronics

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.1926-1946

2008

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Effects of Total Dose Irradiation on Single-Event Upset Hardness

IEEE transactions on nuclear science, 2006-08, Vol.53 (4), p.1772-1778

2006

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Enhanced Proton and Neutron Induced Degradation and Its Impact on Hardness Assurance Testing

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.3096-3105

2008

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Radiation-induced off-state leakage current in commercial power MOSFETs

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2378-2386

2005

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Issues for single-event proton testing of SRAMs

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3692-3700

2004

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Hardness Assurance Test Guideline for Qualifying Devices for Use in Proton Environments

IEEE transactions on nuclear science, 2009-08, Vol.56 (4), p.2171-2178

2009

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Heavy Ion Energy Effects in CMOS SRAMs

IEEE transactions on nuclear science, 2007-08, Vol.54 (4), p.889-893

2007

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Annealing behavior of linear bipolar devices with enhanced low-dose-rate sensitivity

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3172-3177

2004

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Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3078-3084

2009

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Test Procedures for Proton-Induced Single Event Latchup in Space Environments

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.2161-2165

2008

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Impact of passivation layers on enhanced low-dose-rate sensitivity and pre-irradiation elevated-temperature stress effects in bipolar linear ICs

IEEE transactions on nuclear science, 2002-12, Vol.49 (6), p.3171-3179

2002

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Effects of Angle of Incidence on Proton and Neutron-Induced Single-Event Latchup

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3122-3131

2006

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New experimental findings for single-event gate rupture in MOS capacitors and linear devices

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3263-3269

2004

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Effects of Moisture and Hydrogen Exposure on Radiation-Induced MOS Device Degradation and Its Implications for Long-Term Aging

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.3206-3215

2008

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Radiation Response and Variability of Advanced Commercial Foundry Technologies

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3187-3194

2006

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Influence of total-dose radiation on the electrical characteristics of SOI MOSFETs

Microelectronic engineering, 2004-04, Vol.72 (1), p.332-341

2004

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Radiation-induced charge trapping in thin Al2O3/SiOxNy/Si(100) gate dielectric stacks

IEEE transactions on nuclear science, 2003-12, Vol.50 (6), p.1910

2003

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Radiation Effects in MOS Oxides

Production and propagation of single-event transients in high-speed digital logic ICs

Impact of Ion Energy and Species on Single Event Effects Analysis

Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits

New Insights Into Single Event Transient Propagation in Chains of Inverters-Evidence for Propagation-Induced Pulse Broadening

Effects of particle energy on proton-induced single-event latchup

Single-Event Upsets and Multiple-Bit Upsets on a 45 nm SOI SRAM

Enhanced Degradation in Power MOSFET Devices Due to Heavy Ion Irradiation

Total Ionizing Dose and Single Event Effects Hardness Assurance Qualification Issues for Microelectronics

Effects of Total Dose Irradiation on Single-Event Upset Hardness

Enhanced Proton and Neutron Induced Degradation and Its Impact on Hardness Assurance Testing

Radiation-induced off-state leakage current in commercial power MOSFETs

Issues for single-event proton testing of SRAMs

Hardness Assurance Test Guideline for Qualifying Devices for Use in Proton Environments

Heavy Ion Energy Effects in CMOS SRAMs

Annealing behavior of linear bipolar devices with enhanced low-dose-rate sensitivity

Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs

Test Procedures for Proton-Induced Single Event Latchup in Space Environments

Impact of passivation layers on enhanced low-dose-rate sensitivity and pre-irradiation elevated-temperature stress effects in bipolar linear ICs

Effects of Angle of Incidence on Proton and Neutron-Induced Single-Event Latchup

New experimental findings for single-event gate rupture in MOS capacitors and linear devices

Effects of Moisture and Hydrogen Exposure on Radiation-Induced MOS Device Degradation and Its Implications for Long-Term Aging

Radiation Response and Variability of Advanced Commercial Foundry Technologies

Influence of total-dose radiation on the electrical characteristics of SOI MOSFETs

Radiation-induced charge trapping in thin Al2O3/SiOxNy/Si(100) gate dielectric stacks

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