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High-purity semi-insulating 4H-SiC for microwave device applications

Journal of electronic materials, 2003-05, Vol.32 (5), p.432-436

2003

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High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method

Journal of electronic materials, 2002-05, Vol.31 (5), p.366-369

2002

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Status of 4H-SiC Substrate and Epitaxial Materials for Commercial Power Applications

MRS proceedings, 2004, Vol.815, Article J2.4

2004

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High Carrier Lifetime Bulk-Grown 4H-SiC Substrates for Power Applications

MRS proceedings, 2006, Vol.911, Article 0911-B01-03

2006

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Efficient blue-green molecular organic light emitting diodes based on novel silole derivatives

MRS proceedings, 2002, Vol.725, Article P1.3

2002

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Open-Circuit Voltage Characteristics in Polyfluorene Based Photovoltaic Devices

MRS proceedings, 2002, Vol.725, Article P7.8

2002

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Simulation Study on Geometric and Electronic Structure of Photovoltaic Molecules

MRS proceedings, 2002, Vol.725, Article P4.14

2002

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Transport Properties of Indium Tin Oxide on Anisotropic Flexible Transparent Cellulosic Substrates

MRS proceedings, 2002, Vol.725, Article P4.1

2002

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Anomalous Temperature Dependence of Solvent-Enhanced Dye Diffusion In Polymer Films

MRS proceedings, 2002, Vol.725, Article P3.1

2002

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Spin-Dependent Recombination in PPV and Polyfluorene LEDs

MRS proceedings, 2002, Vol.725, Article P8.2

2002

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Designed for Charge Transfer: Complexes of CdSe Nanocrystals and Oligothiophenes

MRS proceedings, 2002, Vol.725, Article P9.7

2002

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Charge motion and trapping in molecularly doped hole transporters

MRS proceedings, 2002, Vol.725, Article P8.1

2002

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Charge transport in disordered organic field-effect transistors

MRS proceedings, 2002, Vol.725, Article P10.9

2002

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Influence of potential barrier materials on device performance

MRS proceedings, 2002, Vol.725, Article P11.1

2002

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Amplification at 1.3μm in a Pr3+-doped single-mode fluorozirconate fibre

Electronics letters, 1991-04, Vol.27 (8), p.628-629

1991

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High efficiency, low threshold amplification and lasing at 0.8μm in monomode Tm3+-doped fluorozirconate fibre

Electronics letters, 1992-01, Vol.28 (1), p.58-59

1992

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System characterisation of high gain and high saturated output power, Pr3+-doped fluorozirconate fibre amplifier at 1.3μm

Electronics letters, 1991-08, Vol.27 (16), p.1472-1474

1991

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Silicon carbide MESFET's with 2 W/mm and 50% P.A.E. at 1.8 GHz

1996 IEEE MTT-S International Microwave Symposium Digest, 1996, Vol.2, p.681-684 vol.2

1996

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High-purity semi-insulating 4H-SiC for microwave device applications

High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method

Status of 4H-SiC Substrate and Epitaxial Materials for Commercial Power Applications

High Carrier Lifetime Bulk-Grown 4H-SiC Substrates for Power Applications

Efficient blue-green molecular organic light emitting diodes based on novel silole derivatives

Open-Circuit Voltage Characteristics in Polyfluorene Based Photovoltaic Devices

Simulation Study on Geometric and Electronic Structure of Photovoltaic Molecules

Transport Properties of Indium Tin Oxide on Anisotropic Flexible Transparent Cellulosic Substrates

Anomalous Temperature Dependence of Solvent-Enhanced Dye Diffusion In Polymer Films

Spin-Dependent Recombination in PPV and Polyfluorene LEDs

Designed for Charge Transfer: Complexes of CdSe Nanocrystals and Oligothiophenes

Charge motion and trapping in molecularly doped hole transporters

Charge transport in disordered organic field-effect transistors

Influence of potential barrier materials on device performance

Amplification at 1.3μm in a Pr3+-doped single-mode fluorozirconate fibre

High efficiency, low threshold amplification and lasing at 0.8μm in monomode Tm3+-doped fluorozirconate fibre

System characterisation of high gain and high saturated output power, Pr3+-doped fluorozirconate fibre amplifier at 1.3μm

Silicon carbide MESFET's with 2 W/mm and 50% P.A.E. at 1.8 GHz

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