UB Paderborn / Katalog / Suche / in CDI

N-way microwave power divider using two-dimensional meta-materials

Electronics letters, 2006-07, Vol.42 (15), p.863-864

ECCLESTON, K. W

2006

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Harmonic load modulation in Doherty amplifiers

Electronics letters, 2008-01, Vol.44 (2), p.128-130

2008

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Four-transistor interleaved Doherty amplifier

Electronics letters, 2009, Vol.45 (15), p.792-794

ECCLESTON, K. W

2009

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Mode Analysis of the Corrugated Substrate Integrated Waveguide

IEEE transactions on microwave theory and techniques, 2012-10, Vol.60 (10), p.3004-3012

Eccleston, K. W.

2012

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Compact dual-fed distributed power amplifier

IEEE transactions on microwave theory and techniques, 2005-03, Vol.53 (3), p.825-831

Eccleston, K.W.

2005

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Modified class-F distributed amplifier

IEEE microwave and wireless components letters, 2004-10, Vol.14 (10), p.481-483

Eccleston, K.W.

2004

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Beam forming transition based upon a zero-phase-shift metamaterial: Asia-Pacific Microwave Conference

IET microwaves, antennas & propagation, 2010, Vol.4 (10), p.1639-1646

ECCLESTON, K. W

2010

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Implementation of a Microstrip Square Planar N-Way Metamaterial Power Divider

IEEE transactions on microwave theory and techniques, 2009-01, Vol.57 (1), p.189-195, Article 189

2009

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High-performance CPW filters use bond wires

Microwaves & RF, 1997-06, Vol.36 (6), p.89-92

1997

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Scalar network analysers operating at Ka- and W-bands

International journal of infrared and millimeter waves, 1991-07, Vol.12 (7), p.819-843

1991

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Interface quality of SiGe oxide prepared by RF plasma anodisation

Electronics letters, 1994-11, Vol.30 (23), p.1988-1989

1994

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Electron trapping in SiO2 formed by oxygen implantation

IEEE electron device letters, 1992-05, Vol.13 (5), p.238-240

1992

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Recovery of submicrometre pMOSFETs from hot carrier degradation by high field injection

Electronics letters, 1993, Vol.29 (12), p.1097-1099

1993

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Comparison of instabilities observed in electrical characteristics of silicon-on-insulator MOSFETs, both above and below threshold voltage

Electronics letters, 1992-07, Vol.28 (15), p.1441-1442

1992

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P-well bias dependence of electron trapping in gate oxide of n-MOSFETs during substrate hot-electron injection

Electronics letters, 1992, Vol.28 (22), p.2080-2082

1992

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Comparison of RF and microwave oxidation systems for the growth of thin oxides at low temperatures

Electronics letters, 1987, Vol.23 (7), p.309-310

1987

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Effect of crystal orientation on plasma-grown oxides of silicon

Electronics letters, 1985, Vol.21 (4), p.142-143

1985

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N-way microwave power divider using two-dimensional meta-materials

Harmonic load modulation in Doherty amplifiers

Four-transistor interleaved Doherty amplifier

Mode Analysis of the Corrugated Substrate Integrated Waveguide

Compact dual-fed distributed power amplifier

Modified class-F distributed amplifier

Beam forming transition based upon a zero-phase-shift metamaterial: Asia-Pacific Microwave Conference

Implementation of a Microstrip Square Planar N-Way Metamaterial Power Divider

High-performance CPW filters use bond wires

Scalar network analysers operating at Ka- and W-bands

Interface quality of SiGe oxide prepared by RF plasma anodisation

Electron trapping in SiO2 formed by oxygen implantation

Recovery of submicrometre pMOSFETs from hot carrier degradation by high field injection

Comparison of instabilities observed in electrical characteristics of silicon-on-insulator MOSFETs, both above and below threshold voltage

P-well bias dependence of electron trapping in gate oxide of n-MOSFETs during substrate hot-electron injection

Comparison of RF and microwave oxidation systems for the growth of thin oxides at low temperatures

Effect of crystal orientation on plasma-grown oxides of silicon

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