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Repetitive Unclamped-Inductive-Switching-Induced Electrical Parameters Degradations and Simulation Optimizations for 4H-SiC MOSFETs

IEEE transactions on electron devices, 2016-11, Vol.63 (11), p.4331-4338

2016

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Comprehensive Investigations on Degradations of Dynamic Characteristics for SiC Power MOSFETs Under Repetitive Avalanche Shocks

IEEE transactions on power electronics, 2019-03, Vol.34 (3), p.2748-2757

2019

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Electrical and Small-Signal Characteristics Degradation of RF GaN HEMTs Under Repetitive ESD Stresses

IEEE transactions on electron devices, 2024-08, Vol.71 (8), p.4535-4542

2024

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Comprehensive Analysis of Electrical Parameters Degradations for SiC Power MOSFETs Under Repetitive Short-Circuit Stress

IEEE transactions on electron devices, 2018-12, Vol.65 (12), p.5440-5447, Article 5440

2018

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Comparison Investigations on Unclamped-Inductive-Switching Behaviors of Power GaN Switching Devices

IEEE transactions on industrial electronics (1982), 2022-05, Vol.69 (5), p.5041-5049

2022

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Understanding Electrical Parameter Degradations of P-GaN HEMT Under Repetitive Short-Circuit Stresses

IEEE transactions on power electronics, 2021-11, Vol.36 (11), p.12173-12176

2021

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Review on the Reliability Mechanisms of SiC Power MOSFETs: A Comparison Between Planar-Gate and Trench-Gate Structures

IEEE transactions on power electronics, 2023-07, Vol.38 (7), p.8990-9005

2023

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Hot-Carrier-Induced Degradations Investigations for 600 V SOI-LIGBT by an Improved Charge Pumping Solution

IEEE transactions on electron devices, 2017-02, Vol.64 (2), p.634-637

2017

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Hot-Carrier-Induced Degradations and Optimizations for Lateral DMOS Transistor With Multiple Floating Poly-Gate Field Plates

IEEE transactions on electron devices, 2017-08, Vol.64 (8), p.3275-3281

2017

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Repetitive ESD-Induced Electrical Degradation and Optimization for High-Voltage SOI-LIGBT as Output Device

IEEE transactions on electron devices, 2023-09, Vol.70 (9), p.4547-4553

2023

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Modeling Avalanche Induced Degradation for 4H-SiC Power MOSFETs

IEEE transactions on power electronics, 2020-11, Vol.35 (11), p.11299-11303

2020

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Switch-OFF Avalanche-Breakdown-Induced Electrical Degradations of RF-LDMOS Transistor for SMPAs Applications

IEEE transactions on electron devices, 2018-10, Vol.65 (10), p.4719-4723

2018

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Suppression Effect of Split-Gate Structure on Repetitive Avalanche Stress Induced Degradation for SiC MOSFETs

IEEE transactions on electron devices, 2024-10, p.1-8

2024

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Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example

Materials, 2022-01, Vol.15 (2), p.457

2022

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OFF-State Inrush-Current-Induced Electrical Parameter Degradations for High-Voltage Lateral DMOS Transistors

IEEE transactions on electron devices, 2015-11, Vol.62 (11), p.3767-3773

2015

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Investigations on the Degradations of Double-Trench SiC Power MOSFETs Under Repetitive Avalanche Stress

IEEE transactions on electron devices, 2019-01, Vol.66 (1), p.546-552

2019

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Investigation on the Degradation Mechanism for GaN Cascode Device Under Repetitive Hard-Switching Stress

IEEE transactions on power electronics, 2022-05, Vol.37 (5), p.6009-6017

2022

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Erratum to "Modeling Avalanche Induced Degradation for 4H-SiC Power MOSFETs"

IEEE transactions on power electronics, 2021-02, Vol.36 (2), p.2447-2447

2021

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Improved Hot-Carrier Reliability of an Ultralow RON,sp SOI-LDMOS by Linearly Doped Technology for Automotive Application

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.935-939

2024

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Improved Hot-Carrier Reliability of an Ultralow R ON,sp SOI-LDMOS by Linearly Doped Technology for Automotive Application

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.935-939

2024

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Investigations on Electrical Parameters Degradations of p-GaN HEMTs Under Repetitive UIS Stresses

IEEE journal of emerging and selected topics in power electronics, 2021-04, Vol.9 (2), p.2227-2234

2021

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Experimental investigation on total-ionizing-dose radiation effects on the electrical properties of SOI-LIGBT

Solid-state electronics, 2021-01, Vol.175, p.107952, Article 107952

2021

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Reliability Concern of 650-V Normally-OFF GaN Devices Under Reverse Freewheeling Stress

IEEE transactions on electron devices, 2020-08, Vol.67 (8), p.3492-3495

2020

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Electrical Parameters Degradations and Optimizations of SOI-LIGBT Under Repetitive Unclamped-Inductive-Switching Conditions

IEEE transactions on electron devices, 2016-04, Vol.63 (4), p.1644-1649

2016

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Comprehensive Investigations on Degradations of Dynamic Characteristics for SiC Power MOSFET s Under Repetitive Avalanche Shocks

IEEE transactions on power electronics, 2019-03, Vol.34 (3), p.2748-2757

2019

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Repetitive Unclamped-Inductive-Switching-Induced Electrical Parameters Degradations and Simulation Optimizations for 4H-SiC MOSFETs

Comprehensive Investigations on Degradations of Dynamic Characteristics for SiC Power MOSFETs Under Repetitive Avalanche Shocks

Electrical and Small-Signal Characteristics Degradation of RF GaN HEMTs Under Repetitive ESD Stresses

Comprehensive Analysis of Electrical Parameters Degradations for SiC Power MOSFETs Under Repetitive Short-Circuit Stress

Comparison Investigations on Unclamped-Inductive-Switching Behaviors of Power GaN Switching Devices

Understanding Electrical Parameter Degradations of P-GaN HEMT Under Repetitive Short-Circuit Stresses

Review on the Reliability Mechanisms of SiC Power MOSFETs: A Comparison Between Planar-Gate and Trench-Gate Structures

Hot-Carrier-Induced Degradations Investigations for 600 V SOI-LIGBT by an Improved Charge Pumping Solution

Hot-Carrier-Induced Degradations and Optimizations for Lateral DMOS Transistor With Multiple Floating Poly-Gate Field Plates

Repetitive ESD-Induced Electrical Degradation and Optimization for High-Voltage SOI-LIGBT as Output Device

Modeling Avalanche Induced Degradation for 4H-SiC Power MOSFETs

Switch-OFF Avalanche-Breakdown-Induced Electrical Degradations of RF-LDMOS Transistor for SMPAs Applications

Suppression Effect of Split-Gate Structure on Repetitive Avalanche Stress Induced Degradation for SiC MOSFETs

Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example

OFF-State Inrush-Current-Induced Electrical Parameter Degradations for High-Voltage Lateral DMOS Transistors

Investigations on the Degradations of Double-Trench SiC Power MOSFETs Under Repetitive Avalanche Stress

Investigation on the Degradation Mechanism for GaN Cascode Device Under Repetitive Hard-Switching Stress

Erratum to "Modeling Avalanche Induced Degradation for 4H-SiC Power MOSFETs"

Improved Hot-Carrier Reliability of an Ultralow RON,sp SOI-LDMOS by Linearly Doped Technology for Automotive Application

Improved Hot-Carrier Reliability of an Ultralow R ON,sp SOI-LDMOS by Linearly Doped Technology for Automotive Application

Investigations on Electrical Parameters Degradations of p-GaN HEMTs Under Repetitive UIS Stresses

Experimental investigation on total-ionizing-dose radiation effects on the electrical properties of SOI-LIGBT

Reliability Concern of 650-V Normally-OFF GaN Devices Under Reverse Freewheeling Stress

Electrical Parameters Degradations and Optimizations of SOI-LIGBT Under Repetitive Unclamped-Inductive-Switching Conditions

Comprehensive Investigations on Degradations of Dynamic Characteristics for SiC Power MOSFET s Under Repetitive Avalanche Shocks

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