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Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors

IEEE electron device letters, 2008-04, Vol.29 (4), p.287-289

2008

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TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

IEEE electron device letters, 2008-10, Vol.29 (10), p.1098-1100

2008

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A model for the critical voltage for electrical degradation of GaN high electron mobility transistors

Microelectronics and reliability, 2010-06, Vol.50 (6), p.767-773

2010

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Role of stress voltage on structural degradation of GaN high-electron-mobility transistors

Microelectronics and reliability, 2011-02, Vol.51 (2), p.201-206

2011

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High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate

Microelectronics and reliability, 2010-06, Vol.50 (6), p.758-762

2010

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Time evolution of electrical degradation under high-voltage stress in GaN high electron mobility transistors

2011 International Reliability Physics Symposium, 2011, p.4E.3.1-4E.3.4

2011

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Impact of Gate Offset on PBTI of p-GaN Gate HEMTs

2022 IEEE International Reliability Physics Symposium (IRPS), 2022, p.P21-1-P21-6

2022

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Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors

2006 International Electron Devices Meeting, 2006, p.1-4

2006

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A Simple Current Collapse Measurement Technique for GaN High-Electron Mobility Transistors

IEEE electron device letters, 2008-07, Vol.29 (7), p.665-667

2008

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Electromigration current limit relaxation for power device interconnects

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018, p.68-71

2018

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Impact of electrical degradation on trapping characteristics of GaN high electron mobility transistors

2008 IEEE International Electron Devices Meeting, 2008, p.1-4

2008

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Impact of self-heating effect in hot carrier injection modeling

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018, p.315-318

2018

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Impact of gate placement on RF power degradation in GaN high electron mobility transistors

Microelectronics and reliability, 2012, Vol.52 (1), p.33-38

2012

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RF power degradation of GaN High Electron Mobility Transistors

2010 International Electron Devices Meeting, 2010, p.20.2.1-20.2.4

2010

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A model for the critical voltage for electrical degradation of GaN high electron mobility transistors

2009 Reliability of Compound Semiconductors Digest (ROCS), 2009, p.3-6

2009

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Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors

TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

A model for the critical voltage for electrical degradation of GaN high electron mobility transistors

Role of stress voltage on structural degradation of GaN high-electron-mobility transistors

High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate

Time evolution of electrical degradation under high-voltage stress in GaN high electron mobility transistors

Impact of Gate Offset on PBTI of p-GaN Gate HEMTs

Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors

A Simple Current Collapse Measurement Technique for GaN High-Electron Mobility Transistors

Electromigration current limit relaxation for power device interconnects

Impact of electrical degradation on trapping characteristics of GaN high electron mobility transistors

Impact of self-heating effect in hot carrier injection modeling

Impact of gate placement on RF power degradation in GaN high electron mobility transistors

RF power degradation of GaN High Electron Mobility Transistors

A model for the critical voltage for electrical degradation of GaN high electron mobility transistors

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