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Photoluminescence of GaN : Mg grown by metalorganic vapor-phase epitaxy (MOVPE)

Journal of crystal growth, 1999-08, Vol.205 (1), p.1-10

1999

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Compensation effects in Mg-doped GaN epilayers

Journal of crystal growth, 1998-06, Vol.189-190, p.523-527

1998

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MOVPE of AlGaAsSb using TTBAl as an alternative aluminum precursor

Journal of crystal growth, 2000-12, Vol.221 (1), p.450-455

2000

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LP-MOVPE growth and optical characterization of GaInP/GaAs heterostructures: interfaces, quantum wells and quantum wires

Journal of crystal growth, 1992-11, Vol.124 (1), p.199-206

1992

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Low-pressure metal organic vapour-phase epitaxy and characterization of strained InAs(P)/InAsSb superlattices for infrared emitters

Journal of crystal growth, 1998-12, Vol.195 (1), p.373-377

1998

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Structural properties of MOVPE-grown ZnSe studied by X-ray diffractometry, atomic force microscopy and electron microscopy

Journal of crystal growth, 1999-02, Vol.197 (3), p.507-512

1999

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The influence of Mg-concentration and carrier gas on the electrical and optical properties of GaN : Mg grown by MOVPE

Journal of crystal growth, 1998-12, Vol.195 (1), p.274-279

1998

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Doping of InAs, GaSb and InPSb by low pressure MOVPE

Journal of crystal growth, 1997-01, Vol.170 (1-4), p.783-787

1997

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Conformal MOVPE of (Al)GaAs on silicon using alternative chlorine-containing precursors

Journal of crystal growth, 2000-12, Vol.221 (1), p.225-230

2000

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The role of impurity bands and electron–phonon interaction in formation of near-band-edge PL spectra of compensated ZnSe

Journal of crystal growth, 2000-06, Vol.214, p.567-571

2000

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MOVPE of AlAsSb using tritertiarybutylaluminum

Journal of crystal growth, 1998-12, Vol.195 (1), p.85-90

1998

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InP growth on ion-implanted InP substrate: a new method to achieve selective area MOVPE

Journal of crystal growth, 1997-01, Vol.170 (1-4), p.655-660

1997

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Deposition by LP-MOVPE in the Ga-In-As-P system on differently oriented substrates

Journal of crystal growth, 1992-11, Vol.124 (1), p.326-332

1992

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Calculation of lateral distribution of lattice constant for horizontal MOVPE grown quaternary alloys

Journal of crystal growth, 1998-09, Vol.193 (1), p.50-54

1998

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ZnSe/ZnMgSSe structures on ZnSSe substrates

Journal of crystal growth, 2000-06, Vol.214, p.355-358

2000

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Selective growth of SiGe structures in the sub 100 nm range using low pressure vapor phase epitaxy

Journal of crystal growth, 1995-09, Vol.154 (1), p.189-192

1995

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Light emitting diodes as a monitor to study P-type doping of GaN-based heterostructures grown by MOVPE

Journal of crystal growth, 1998-06, Vol.189-190, p.798-802

1998

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Comparative study on the low pressure metalorganic vapor phase epitaxial growth of InSb on GaAs with trimethylantimony and triethylantimony as Sb precursors

Journal of crystal growth, 1994-02, Vol.135 (3), p.434-440

1994

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Lattice-matched growth of InPSb on InAs by low-pressure plasma MOVPE

Journal of crystal growth, 1992-11, Vol.124 (1), p.389-394

1992

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Surface morphology and growth rate variation of InP on patterned substrates using tertiarybutylphosphine

Journal of crystal growth, 1998-07, Vol.191 (3), p.341-346

1998

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Characterization of the interface abruptness of In0.53Ga0.47As/InP multi quantum wells by Raman spectroscopy, X-ray diffractometry and photoluminescence

Journal of crystal growth, 1994-12, Vol.145 (1-4), p.813-818

1994

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Silicon doping of InGaAs grown by MOVPE using tertiarybutylarsine

Journal of crystal growth, 1997-10, Vol.181 (1), p.26-32

1997

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Growth and characterization of Sb-based heterostructures grown by LP-MOVPE

Journal of crystal growth, 1997-01, Vol.170 (1-4), p.772-776

1997

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Characterization of MOVPE grown InGaAsP superlattices for modulators by electron diffraction, X-ray diffraction and Z-contrast imaging

Journal of crystal growth, 1997-01, Vol.170 (1-4), p.732-737

1997

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Growth of GaSb and InSb by low-pressure plasma MOVPE

Journal of crystal growth, 1992-11, Vol.124 (1), p.377-382

1992

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Photoluminescence of GaN : Mg grown by metalorganic vapor-phase epitaxy (MOVPE)

Compensation effects in Mg-doped GaN epilayers

MOVPE of AlGaAsSb using TTBAl as an alternative aluminum precursor

LP-MOVPE growth and optical characterization of GaInP/GaAs heterostructures: interfaces, quantum wells and quantum wires

Low-pressure metal organic vapour-phase epitaxy and characterization of strained InAs(P)/InAsSb superlattices for infrared emitters

Structural properties of MOVPE-grown ZnSe studied by X-ray diffractometry, atomic force microscopy and electron microscopy

The influence of Mg-concentration and carrier gas on the electrical and optical properties of GaN : Mg grown by MOVPE

Doping of InAs, GaSb and InPSb by low pressure MOVPE

Conformal MOVPE of (Al)GaAs on silicon using alternative chlorine-containing precursors

The role of impurity bands and electron–phonon interaction in formation of near-band-edge PL spectra of compensated ZnSe

MOVPE of AlAsSb using tritertiarybutylaluminum

InP growth on ion-implanted InP substrate: a new method to achieve selective area MOVPE

Deposition by LP-MOVPE in the Ga-In-As-P system on differently oriented substrates

Calculation of lateral distribution of lattice constant for horizontal MOVPE grown quaternary alloys

ZnSe/ZnMgSSe structures on ZnSSe substrates

Selective growth of SiGe structures in the sub 100 nm range using low pressure vapor phase epitaxy

Light emitting diodes as a monitor to study P-type doping of GaN-based heterostructures grown by MOVPE

Comparative study on the low pressure metalorganic vapor phase epitaxial growth of InSb on GaAs with trimethylantimony and triethylantimony as Sb precursors

Lattice-matched growth of InPSb on InAs by low-pressure plasma MOVPE

Surface morphology and growth rate variation of InP on patterned substrates using tertiarybutylphosphine

Characterization of the interface abruptness of In0.53Ga0.47As/InP multi quantum wells by Raman spectroscopy, X-ray diffractometry and photoluminescence

Silicon doping of InGaAs grown by MOVPE using tertiarybutylarsine

Growth and characterization of Sb-based heterostructures grown by LP-MOVPE

Characterization of MOVPE grown InGaAsP superlattices for modulators by electron diffraction, X-ray diffraction and Z-contrast imaging

Growth of GaSb and InSb by low-pressure plasma MOVPE

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