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SQUID-based microwave cavity search for dark-matter axions

Physical review letters, 2010-01, Vol.104 (4), p.041301-041301, Article 041301

2010

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Safe, accurate, and precise sulfur isotope analyses of arsenides, sulfarsenides, and arsenic and mercury sulfides by conversion to barium sulfate before EA/IRMS

Analytical and bioanalytical chemistry, 2022-03, Vol.414 (6), p.2163-2179

2022

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All III‐arsenide low threshold InAs quantum dot lasers on InP(001)

Electronics letters, 2023-08, Vol.59 (16), p.n/a

2023

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Planar penta-transition metal phosphide and arsenide as narrow-gap semiconductors with ultrahigh carrier mobility

Journal of materials science, 2019-05, Vol.54 (9), p.7035-7047

2019

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Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy

Journal of applied physics, 2010-12, Vol.108 (11), p.114316-114316-7

2010

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High-performance quantum ring detector for the 1-3 terahertz range

Applied physics letters, 2010-06, Vol.96 (23), p.231103-231103-3

2010

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Two-temperature synthesis of non-linear optical compound CdGeAs^sub 2

Journal of crystal growth, 2016-12, Vol.455, p.129

2016

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Magmatic platinum nanoparticles in metasomatic silicate glasses and sulfides from Patagonian mantle xenoliths

Contributions to mineralogy and petrology, 2019-05, Vol.174 (5), p.1-18, Article 47

2019

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STUDY OF PHASE EQUILIBRIA IN THE FE-AS-S TERNARY SYSTEM

Calphad, 2021-06, Vol.73, p.63

2021

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Organometallic synthesis of GaAs crystallites exhibiting quantum confinement

Journal of the American Chemical Society, 1990-12, Vol.112:25

1990

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Absence of vapor-liquid-solid growth during molecular beam epitaxy of self-induced InAs nanowires on Si

Applied physics letters, 2011-03, Vol.98 (12)

2011

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Determination of Arsenic Species Distribution in Arsenide Tailings and Leakage Using Geochemical and Geophysical Methods

Applied sciences, 2023-01, Vol.13 (2), p.1067

2023

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Hydrothermal Mineralization and Mineral Chemistry of Arsenides and Sulfarsenides in the Fe-Co-Ni-As-S System and Introduction of Three Unique Minerals, Port Radium Deposit, Canada

Minerals (Basel), 2024-01, Vol.14 (1), p.85

2024

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Fractionation of platinum, palladium, nickel, and copper in sulfide–arsenide systems at magmatic temperature

Contributions to mineralogy and petrology, 2013-12, Vol.166 (6), p.1725-1737

2013

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Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon

Applied physics letters, 2010-03, Vol.96 (12), p.121901-121901-3

2010

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Impact of heavy hole-light hole coupling on optical selection rules in GaAs quantum dots

Applied physics letters, 2010-08, Vol.97 (5), p.051111-051111-3

2010

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Transport and strain relaxation in wurtzite InAs-GaAs core-shell heterowires

Applied physics letters, 2011-04, Vol.98 (15), p.152103-152103-3

2011

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Adsorption and Its Mechanism of Arsenate in Aqueous Solutions by Red Soil

Water (Basel), 2022-02, Vol.14 (4), p.579

2022

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Gain-induced trapping of microcavity exciton polariton condensates

Physical review letters, 2010-03, Vol.104 (12), p.126403-126403, Article 126403

2010

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In situ growth of superconducting NdFeAs(O,F) thin films by molecular beam epitaxy

Applied physics letters, 2010-07, Vol.97 (4), p.042509-042509-3

2010

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Incorporation of the dopants Si and Be into GaAs nanowires

Applied physics letters, 2010-05, Vol.96 (19), p.193104-193104-3

2010

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Epitaxial EuO thin films on GaAs

Applied physics letters, 2010-09, Vol.97 (11), p.112509-112509-3

2010

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InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy

Applied physics letters, 2010-12, Vol.97 (24)

2010

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First-principles study of tantalum-arsenic binary compounds

Journal of applied physics, 2017-01, Vol.121 (1)

2017

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Single quantum dot emission at telecom wavelengths from metamorphic InAs/InGaAs nanostructures grown on GaAs substrates

Applied physics letters, 2011-04, Vol.98 (17), p.173112-173112-3

2011

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SQUID-based microwave cavity search for dark-matter axions

Safe, accurate, and precise sulfur isotope analyses of arsenides, sulfarsenides, and arsenic and mercury sulfides by conversion to barium sulfate before EA/IRMS

All III‐arsenide low threshold InAs quantum dot lasers on InP(001)

Planar penta-transition metal phosphide and arsenide as narrow-gap semiconductors with ultrahigh carrier mobility

Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy

High-performance quantum ring detector for the 1-3 terahertz range

Two-temperature synthesis of non-linear optical compound CdGeAs^sub 2

Magmatic platinum nanoparticles in metasomatic silicate glasses and sulfides from Patagonian mantle xenoliths

STUDY OF PHASE EQUILIBRIA IN THE FE-AS-S TERNARY SYSTEM

Organometallic synthesis of GaAs crystallites exhibiting quantum confinement

Absence of vapor-liquid-solid growth during molecular beam epitaxy of self-induced InAs nanowires on Si

Determination of Arsenic Species Distribution in Arsenide Tailings and Leakage Using Geochemical and Geophysical Methods

Hydrothermal Mineralization and Mineral Chemistry of Arsenides and Sulfarsenides in the Fe-Co-Ni-As-S System and Introduction of Three Unique Minerals, Port Radium Deposit, Canada

Fractionation of platinum, palladium, nickel, and copper in sulfide–arsenide systems at magmatic temperature

Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon

Impact of heavy hole-light hole coupling on optical selection rules in GaAs quantum dots

Transport and strain relaxation in wurtzite InAs-GaAs core-shell heterowires

Adsorption and Its Mechanism of Arsenate in Aqueous Solutions by Red Soil

Gain-induced trapping of microcavity exciton polariton condensates

In situ growth of superconducting NdFeAs(O,F) thin films by molecular beam epitaxy

Incorporation of the dopants Si and Be into GaAs nanowires

Epitaxial EuO thin films on GaAs

InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy

First-principles study of tantalum-arsenic binary compounds

Single quantum dot emission at telecom wavelengths from metamorphic InAs/InGaAs nanostructures grown on GaAs substrates

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