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Back-contacted back-junction n-type silicon solar cells featuring an insulating thin film for decoupling charge carrier collection and metallization geometry

Progress in photovoltaics, 2013-08, Vol.21 (5), p.1063-1076

2013

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A 0.9-1.5 GHz Microstrip Antenna With Full Polarization Diversity and Frequency Agility

IEEE transactions on antennas and propagation, 2014-05, Vol.62 (5), p.2398-2406

2014

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Comparison and Reduction of Conducted EMI in SiC JFET and Si IGBT-Based Motor Drives

IEEE transactions on power electronics, 2014-04, Vol.29 (4), p.1757-1767

2014

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Sulfonated polyaniline/n-type silicon junctions

Journal of materials science. Materials in electronics, 2009-02, Vol.20 (2), p.123-126

2009

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Degradation analysis of a-Si, (HIT) hetro-junction intrinsic thin layer silicon and m-C-Si solar photovoltaic technologies under outdoor conditions

Energy (Oxford), 2014-08, Vol.72, p.536-546

2014

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Enhancing leakage suppression in carbon-rich silicon junctions

IEEE electron device letters, 2006-06, Vol.27 (6), p.442-444

2006

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Self-Powered Gate Driver for Normally ON Silicon Carbide Junction Field-Effect Transistors Without External Power Supply

IEEE transactions on power electronics, 2013-03, Vol.28 (3), p.1488-1501

2013

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Rectifying pyronine-B/p-type silicon junctions formed by sublimation of pyronine-B

Journal of materials science. Materials in electronics, 2004, Vol.15 (1), p.47-53

2004

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Compact High-Precision Models for Silicon p-n Step Junction Avalanche-Breakdown Voltages

IEEE transactions on electron devices, 2011-03, Vol.58 (3), p.658-663

Bauer, F D

2011

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Modeling, Simulation, and Validation of a Power SiC BJT

IEEE transactions on power electronics, 2012-10, Vol.27 (10), p.4338-4346

2012

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Efficient silicon light emitting diodes by boron implantation: the mechanism

Optical materials, 2005-02, Vol.27 (5), p.1041-1045

2005

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Ultra-shallow raised p+-n junctions formed by diffusion from selectively deposited in-situ doped Si0.7Ge0.3

Journal of electronic materials, 1995-10, Vol.24 (10), p.1369-1376

1995

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Electrically-detected magnetic resonance near the p-doped/n-doped interface of Si junction diodes

Colloids and surfaces. A, Physicochemical and engineering aspects, 1993-06, Vol.72, p.119-125

1993

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Simulation of hydrogenated amorphous and microcrystalline silicon optoelectronic devices

Mathematics and computers in simulation, 1999-09, Vol.49 (4), p.381-401

1999

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Effect of epitaxial realignment on the leakage behavior of arsenic-implanted, As-deposited polycrystalline Si-on-single crystal Si diodes

Journal of electronic materials, 1993-05, Vol.22 (5), p.551-554

1993

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Reconfigurable Silicon Nanowire Transistors

Nano letters, 2012-01, Vol.12 (1), p.119-124

2012

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Hybrid Si Microwire and Planar Solar Cells: Passivation and Characterization

Nano letters, 2011-07, Vol.11 (7), p.2704-2708

2011

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High Efficiency Graphene Solar Cells by Chemical Doping

Nano letters, 2012-06, Vol.12 (6), p.2745-2750

2012

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Improved Subthreshold and Output Characteristics of Source-Pocket Si Tunnel FET by the Application of Laser Annealing

IEEE transactions on electron devices, 2013-01, Vol.60 (1), p.92-96

2013

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21-kV SiC BJTs With Space-Modulated Junction Termination Extension

IEEE electron device letters, 2012-11, Vol.33 (11), p.1598-1600

2012

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High efficiency and stable hydrogenated amorphous silicon radial junction solar cells built on VLS-grown silicon nanowires

Solar energy materials and solar cells, 2013-11, Vol.118, p.90-95

2013

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Heterojunction Silicon Microwire Solar Cells

Nano letters, 2012-12, Vol.12 (12), p.6278-6282

2012

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Space-Modulated Junction Termination Extension for Ultrahigh-Voltage p-i-n Diodes in 4H-SiC

IEEE transactions on electron devices, 2012-02, Vol.59 (2), p.414-418

2012

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Pseudo-Two-Dimensional Model for Double-Gate Tunnel FETs Considering the Junctions Depletion Regions

IEEE transactions on electron devices, 2010-04, Vol.57 (4), p.827-834

2010

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4H-SiC BJTs With Record Current Gains of 257 on (0001) and 335 on ( \hbox\bar})

IEEE electron device letters, 2011-07, Vol.32 (7), p.841-843

2011

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Back-contacted back-junction n-type silicon solar cells featuring an insulating thin film for decoupling charge carrier collection and metallization geometry

A 0.9-1.5 GHz Microstrip Antenna With Full Polarization Diversity and Frequency Agility

Comparison and Reduction of Conducted EMI in SiC JFET and Si IGBT-Based Motor Drives

Sulfonated polyaniline/n-type silicon junctions

Degradation analysis of a-Si, (HIT) hetro-junction intrinsic thin layer silicon and m-C-Si solar photovoltaic technologies under outdoor conditions

Enhancing leakage suppression in carbon-rich silicon junctions

Self-Powered Gate Driver for Normally ON Silicon Carbide Junction Field-Effect Transistors Without External Power Supply

Rectifying pyronine-B/p-type silicon junctions formed by sublimation of pyronine-B

Compact High-Precision Models for Silicon p-n Step Junction Avalanche-Breakdown Voltages

Modeling, Simulation, and Validation of a Power SiC BJT

Efficient silicon light emitting diodes by boron implantation: the mechanism

Ultra-shallow raised p+-n junctions formed by diffusion from selectively deposited in-situ doped Si0.7Ge0.3

Electrically-detected magnetic resonance near the p-doped/n-doped interface of Si junction diodes

Simulation of hydrogenated amorphous and microcrystalline silicon optoelectronic devices

Effect of epitaxial realignment on the leakage behavior of arsenic-implanted, As-deposited polycrystalline Si-on-single crystal Si diodes

Reconfigurable Silicon Nanowire Transistors

Hybrid Si Microwire and Planar Solar Cells: Passivation and Characterization

High Efficiency Graphene Solar Cells by Chemical Doping

Improved Subthreshold and Output Characteristics of Source-Pocket Si Tunnel FET by the Application of Laser Annealing

21-kV SiC BJTs With Space-Modulated Junction Termination Extension

High efficiency and stable hydrogenated amorphous silicon radial junction solar cells built on VLS-grown silicon nanowires

Heterojunction Silicon Microwire Solar Cells

Space-Modulated Junction Termination Extension for Ultrahigh-Voltage p-i-n Diodes in 4H-SiC

Pseudo-Two-Dimensional Model for Double-Gate Tunnel FETs Considering the Junctions Depletion Regions

4H-SiC BJTs With Record Current Gains of 257 on (0001) and 335 on ( \hbox\bar})

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