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Recessed Anode AlGaN/GaN Schottky Barrier Diode for Temperature Sensor Application

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.5162-5166

2021

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Normally-Off AlGaN/GaN Heterojunction Metal-Insulator-Semiconductor Field-Effect Transistors With Gate-First Process

IEEE electron device letters, 2019-02, Vol.40 (2), p.185-188

2019

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High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

IEEE transactions on electron devices, 2022-09, Vol.69 (9), p.4859-4863

2022

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MiRNA-155 Biosensors Based on AlGaN/GaN Heterojunction Field Effect Transistors With an Au-SH-RNA Probe Gate

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1860-1864

2023

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Recessed AlGaN/GaN Schottky Barrier Diodes With TiN and NiN Dual Anodes

IEEE transactions on electron devices, 2021-06, Vol.68 (6), p.2867-2871

2021

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Enhanced pH Sensitivity of AlGaN/GaN Ion-Sensitive Field-Effect Transistor by Recess Process and Ammonium Hydroxide Treatment

IEEE transactions on electron devices, 2021-03, Vol.68 (3), p.1250-1254

2021

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Effect of oxygen plasma treatment on the performance of AlGaN/GaN ion-sensitive field-effect transistors

Diamond and related materials, 2017-03, Vol.73, p.1-6

2017

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Thermally stable TiN Schottky contact on AlGaN/GaN heterostructure

Vacuum, 2013-01, Vol.87, p.150-154

2013

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Characterization of GaN MOSFETs on AlGaN/GaN Heterostructure With Variation in Channel Dimensions

IEEE transactions on electron devices, 2014-02, Vol.61 (2), p.498-504

2014

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AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

AIP advances, 2017-09, Vol.7 (9), p.095305-095305-7

2017

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Thermal Analysis of AlGaN/GaN Hetero-Structural Gunn Diodes on Different Substrates Through Numerical Simulation

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.134-139

2020

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Two-dimensional device simulation of AlGaN/GaN heterojunction FET side-gating effect

Japanese Journal of Applied Physics, 2014-11, Vol.53 (11), p.114302-1-114302-7

2014

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Influence of Dry Recess Process on Enhancement-Mode GaN Metal--Oxide--Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics, 2013-01, Vol.52 (1), p.01AG02-01AG02-5

2013

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Evaluation of a Gate-First Process for AlGaN/GaN Heterostructure Field-Effect Transistors

Japanese Journal of Applied Physics, 2013-11, Vol.52 (11), p.11NH01-11NH01-5

2013

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Observation of Side-Gating Effect in AlGaN/GaN Heterostructure Field Effect Transistors

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JN28-08JN28-5

2013

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Synthesis and Application of Metal Nitrides as Schottky Electrodes for Gallium Nitride Electron Devices

Science of advanced materials, 2014-07, Vol.6 (7), p.1645-1649

2014

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Copper gate AlGaN/GaN HEMT with low gate leakage current

IEEE electron device letters, 2003-08, Vol.24 (8), p.500-502

2003

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Temperature dependence of sensing characteristics of a pH sensor fabricated on AlGaN/GaN heterostructure

Japanese Journal of Applied Physics, 2014-11, Vol.53 (11S), p.11-1-11RD01-5

2014

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Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature

Chinese physics B, 2016-03, Vol.25 (3), p.38503-38505

2016

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Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure

Solid-state electronics, 2014-09, Vol.99, p.59-64

2014

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Reduction of leakage current by O2 plasma treatment for device isolation of AlGaN/GaN heterojunction field-effect transistors

Applied surface science, 2015-10, Vol.351, p.1155-1160

2015

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Enhancement-mode AlGaN/GaN HEMTs with a semi-wraparound metal-insulator-semiconductor gate

2022 10th International Symposium on Next-Generation Electronics (ISNE), 2023, p.1-3

2023

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2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection

IEICE transactions on electronics, 2010, Vol.E93-C (8), p.1218-1224

2010

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Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress

IEICE transactions on electronics, 2008, Vol.E91-C (7), p.1004-1008

2008

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A Fundamental Study of the Electron Beam Lithography beyond Sub 100nm Process and its Application

Advanced Materials Research, 2015-06, Vol.1109, p.617-625

2015

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Recessed Anode AlGaN/GaN Schottky Barrier Diode for Temperature Sensor Application

Normally-Off AlGaN/GaN Heterojunction Metal-Insulator-Semiconductor Field-Effect Transistors With Gate-First Process

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

MiRNA-155 Biosensors Based on AlGaN/GaN Heterojunction Field Effect Transistors With an Au-SH-RNA Probe Gate

Recessed AlGaN/GaN Schottky Barrier Diodes With TiN and NiN Dual Anodes

Enhanced pH Sensitivity of AlGaN/GaN Ion-Sensitive Field-Effect Transistor by Recess Process and Ammonium Hydroxide Treatment

Effect of oxygen plasma treatment on the performance of AlGaN/GaN ion-sensitive field-effect transistors

Thermally stable TiN Schottky contact on AlGaN/GaN heterostructure

Characterization of GaN MOSFETs on AlGaN/GaN Heterostructure With Variation in Channel Dimensions

AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

Thermal Analysis of AlGaN/GaN Hetero-Structural Gunn Diodes on Different Substrates Through Numerical Simulation

Two-dimensional device simulation of AlGaN/GaN heterojunction FET side-gating effect

Influence of Dry Recess Process on Enhancement-Mode GaN Metal--Oxide--Semiconductor Field-Effect Transistors

Evaluation of a Gate-First Process for AlGaN/GaN Heterostructure Field-Effect Transistors

Observation of Side-Gating Effect in AlGaN/GaN Heterostructure Field Effect Transistors

Synthesis and Application of Metal Nitrides as Schottky Electrodes for Gallium Nitride Electron Devices

Copper gate AlGaN/GaN HEMT with low gate leakage current

Temperature dependence of sensing characteristics of a pH sensor fabricated on AlGaN/GaN heterostructure

Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature

Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure

Reduction of leakage current by O2 plasma treatment for device isolation of AlGaN/GaN heterojunction field-effect transistors

Enhancement-mode AlGaN/GaN HEMTs with a semi-wraparound metal-insulator-semiconductor gate

2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection

Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress

A Fundamental Study of the Electron Beam Lithography beyond Sub 100nm Process and its Application

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