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Investigation of CSAR 62, a new resist for electron beam lithography

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2014-11, Vol.32 (6)

2014

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Robust sub-100 nm T-Gate fabrication process using multi-step development

Micro and Nano Engineering, 2023-06, Vol.19, p.100211, Article 100211

2023

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Alignment verification for electron beam lithography

Microelectronic engineering, 2014-07, Vol.123, p.9-12

2014

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Multi-wavelength filters in silicon using superposition sidewall Bragg grating devices

Optics letters, 2014-01, Vol.39 (2), p.413

2014

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Long nanoscale gaps on III–V substrates by electron beam lithography

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2012-11, Vol.30 (6)

2012

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Determining the Electronic Performance Limitations in Top-Down-Fabricated Si Nanowires with Mean Widths Down to 4 nm

Nano letters, 2014-11, Vol.14 (11), p.6056-6060

2014

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Improved alignment algorithm for electron beam lithography

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2014-11, Vol.32 (6)

2014

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Coherently Coupled Photonic-Crystal Surface-Emitting Laser Array

IEEE journal of selected topics in quantum electronics, 2015-11, Vol.21 (6), p.493-499

2015

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A simple silicon compatible 40 nm electroplated copper T-gate process

Microelectronic engineering, 2014-06, Vol.121, p.153-155

2014

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A simple silicon compatible 40nm electroplated copper T-gate process

Microelectronic engineering, 2014-06, Vol.121, p.153-155

2014

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A simple silicon compatible 40 nm electroplated copper T-gate process: Nano Fabrication 2013

Microelectronic engineering, 2014, Vol.121, p.153-155

2014

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Field-Effect Mobility of InAs Surface Channel nMOSFET With Low D Scaled Gate-Stack

IEEE transactions on electron devices, 2015-08, Vol.62 (8), p.2429-2436

2015

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Aperiodic interferometer for six degrees of freedom position measurement

Optics letters, 2012-04, Vol.37 (7), p.1247

2012

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III–V nMOSFETs – Some issues associated with roadmap worthiness (invited)

Microelectronic engineering, 2011-07, Vol.88 (7), p.1070-1075

2011

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Electron Mobility in Surface- and Buried-Channel Flatband \hbox\hbox\hbox MOSFETs With ALD \hbox\hbox Gate Dielectric

IEEE electron device letters, 2011-04, Vol.32 (4), p.494-496

2011

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Electron Mobility in Surface- and Buried-Channel Flatband hbox In 0.53 hbox Ga 0.47 hbox As MOSFETs With ALD hbox Al 2 hbox O 3 Gate Dielectric

IEEE electron device letters, 2011-04, Vol.32 (4), p.494-496

2011

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Electron Mobility in Surface- and Buried-Channel Flatband [Formula Omitted] MOSFETs With ALD [Formula Omitted] Gate Dielectric

IEEE electron device letters, 2011-04, Vol.32 (4), p.494

2011

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Caffeine blocks activation of cyclic AMP synthesis in Dictyostelium discoideum

Developmental biology, 1984, Vol.101 (1), p.136-146

1984

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50 nm metamorphic GaAs and InP HEMTs

Thin solid films, 2007-03, Vol.515 (10), p.4373-4377

2007

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Retinoic acid-induced pattern duplication in regenerating urodele limbs

Developmental biology, 1984-06, Vol.103 (2), p.319-328

1984

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Enhancement-Mode GaAs MOSFETs With an \hbox \hbox\hbox Channel, a Mobility of Over 5000 \hbox^/\hbox \cdot \hbox, and Transconductance of Over 475 \mu\hbox/\mu\hbox

IEEE electron device letters, 2007-12, Vol.28 (12), p.1080-1082

2007

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Fabrication and performance of 50 nm T-gates for InP high electron mobility transistors

Microelectronic engineering, 2004-06, Vol.73, p.818-821

2004

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Fabrication and performance of 50 nm T-gates for InP high electron mobility transistors

Microelectronic engineering, 2004-06, Vol.73-74, p.818-821

2004

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Pattern regulation and the origin of extra parts following axial misalignments in the urodele limb bud

Development (Cambridge), 1980-12, Vol.60 (1), p.33-55

1980

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Ultrasmall device fabrication using dry etching of gaas

Microelectronic engineering, 1986, Vol.5 (1), p.249-256

1986

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Investigation of CSAR 62, a new resist for electron beam lithography

Robust sub-100 nm T-Gate fabrication process using multi-step development

Alignment verification for electron beam lithography

Multi-wavelength filters in silicon using superposition sidewall Bragg grating devices

Long nanoscale gaps on III–V substrates by electron beam lithography

Determining the Electronic Performance Limitations in Top-Down-Fabricated Si Nanowires with Mean Widths Down to 4 nm

Improved alignment algorithm for electron beam lithography

Coherently Coupled Photonic-Crystal Surface-Emitting Laser Array

A simple silicon compatible 40 nm electroplated copper T-gate process

A simple silicon compatible 40nm electroplated copper T-gate process

A simple silicon compatible 40 nm electroplated copper T-gate process: Nano Fabrication 2013

Field-Effect Mobility of InAs Surface Channel nMOSFET With Low D Scaled Gate-Stack

Aperiodic interferometer for six degrees of freedom position measurement

III–V nMOSFETs – Some issues associated with roadmap worthiness (invited)

Electron Mobility in Surface- and Buried-Channel Flatband \hbox\hbox\hbox MOSFETs With ALD \hbox\hbox Gate Dielectric

Electron Mobility in Surface- and Buried-Channel Flatband hbox In 0.53 hbox Ga 0.47 hbox As MOSFETs With ALD hbox Al 2 hbox O 3 Gate Dielectric

Electron Mobility in Surface- and Buried-Channel Flatband [Formula Omitted] MOSFETs With ALD [Formula Omitted] Gate Dielectric

Caffeine blocks activation of cyclic AMP synthesis in Dictyostelium discoideum

50 nm metamorphic GaAs and InP HEMTs

Retinoic acid-induced pattern duplication in regenerating urodele limbs

Enhancement-Mode GaAs MOSFETs With an \hbox \hbox\hbox Channel, a Mobility of Over 5000 \hbox^/\hbox \cdot \hbox, and Transconductance of Over 475 \mu\hbox/\mu\hbox

Fabrication and performance of 50 nm T-gates for InP high electron mobility transistors

Fabrication and performance of 50 nm T-gates for InP high electron mobility transistors

Pattern regulation and the origin of extra parts following axial misalignments in the urodele limb bud

Ultrasmall device fabrication using dry etching of gaas

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