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Cathodoluminescence Studies of the Inhomogeneities in Sn-doped Ga2O3 Nanowires

Nano letters, 2009-09, Vol.9 (9), p.3245-3251

2009

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Application of CL/EBIC-SEM Techniques for Characterization of Radiation Effects in Multijunction Solar Cells

IEEE transactions on nuclear science, 2010-12, Vol.57 (6), p.3095-3100

2010

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Radiation response of multi-quantum well solar cells: Electron-beam-induced current analysis

Journal of applied physics, 2015-12, Vol.118 (24)

2015

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Stacking fault nucleation sites in diffused 4H-SiC p - i - n diodes

Journal of applied physics, 2005-04, Vol.97 (7), p.074501-074501-6

2005

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Bulk growth of single crystal silicon carbide

Microelectronic engineering, 2006, Vol.83 (1), p.155-159

2006

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Surface plasmon resonance investigation procedure as a structure sensitive method for SnO2 nanofilms

Thin solid films, 2012-11, Vol.522, p.452-456

2012

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Observation of dislocations in diffused 4H–SiC p-i-n diodes by electron-beam induced current

Journal of applied physics, 2005-01, Vol.97 (1)

2005

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Electron Channeling Contrast Imaging for Non-Destructive Analysis of Extended Defects in Semiconductor Thin Films and Device Structures

Microscopy and microanalysis, 2014-08, Vol.20 (S3), p.1064-1065

2014

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Electron-beam-induced current observed for dislocations in diffused 4H-SiC P–N diodes

Applied physics letters, 2004-03, Vol.84 (9), p.1576-1578

2004

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Effect of threading screw and edge dislocations on transport properties of 4H–SiC homoepitaxial layers

Journal of applied physics, 2010-07, Vol.108 (1)

2010

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Effect of basal plane dislocations on characteristics of diffused 4H-SiC p-i-n diodes

IEEE transactions on electron devices, 2005-12, Vol.52 (12), p.2546-2551

2005

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FIB/TEM Investigation of crystallographic defects in type-II superlattice based infrared detectors

Microscopy and microanalysis, 2012-07, Vol.18 (S2), p.1806-1807

2012

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CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers

Materials science forum, 2010-04, Vol.645-648, p.211-214

2010

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Evolution of Deep Defect Centers in Semi-Insulating 4H-SiC Substrates under High-Temperature Annealing

Journal of electronic materials, 2009-04, Vol.38 (4), p.551-556, Article 551

2009

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Characterization of erbium chloride seeded gallium nitride nanocrystals

Thin solid films, 2008-12, Vol.517 (3), p.1111-1114

2008

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The distribution function of the variance of Allan: theory and practice

Izmeritel`naya Tekhnika, 2018 (6), p.20-25

MAXIMENKO, S. G.

2018

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Nature of luminescence and strain in gallium nitride nanowires

Journal of crystal growth, 2009-05, Vol.311 (10), p.2982-2986

2009

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Open Core Dislocations and Surface Energy of SiC

Materials science forum, 2006-10, Vol.527-529, p.439-442

2006

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Propagation of stacking faults from surface damage in SiC PiN diodes

Applied physics letters, 2006-02, Vol.88 (6), p.062101-062101-3

2006

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Global Sea Level Rise: RECENT PROGRESS AND CHALLENGES FOR THE DECADE TO COME

Oceanography (Washington, D.C.), 2010-12, Vol.23 (4), p.26-35

2010

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Evolution of D1-Defect Center in 4H-SiC during High Temperature Annealing

Materials science forum, 2009, Vol.600-603, p.429-432

2009

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Structure and Orientation Determination of Metal-Oxide Nanostructures by Electron Backscatter Diffraction

Microscopy and microanalysis, 2009-07, Vol.15 (S2), p.402-403

2009

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Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-Ray Topography

Materials science forum, 2009-01, Vol.600-603, p.549-552

2009

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Recombination Behaviour of Stacking Faults in SiC p-i-n Diodes

Materials science forum, 2006-10, Vol.527-529, p.367-370

2006

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Performance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free Epilayers

Materials science forum, 2006-10, Vol.527-529, p.371-374

2006

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Cathodoluminescence Studies of the Inhomogeneities in Sn-doped Ga2O3 Nanowires

Application of CL/EBIC-SEM Techniques for Characterization of Radiation Effects in Multijunction Solar Cells

Radiation response of multi-quantum well solar cells: Electron-beam-induced current analysis

Stacking fault nucleation sites in diffused 4H-SiC p - i - n diodes

Bulk growth of single crystal silicon carbide

Surface plasmon resonance investigation procedure as a structure sensitive method for SnO2 nanofilms

Observation of dislocations in diffused 4H–SiC p-i-n diodes by electron-beam induced current

Electron Channeling Contrast Imaging for Non-Destructive Analysis of Extended Defects in Semiconductor Thin Films and Device Structures

Electron-beam-induced current observed for dislocations in diffused 4H-SiC P–N diodes

Effect of threading screw and edge dislocations on transport properties of 4H–SiC homoepitaxial layers

Effect of basal plane dislocations on characteristics of diffused 4H-SiC p-i-n diodes

FIB/TEM Investigation of crystallographic defects in type-II superlattice based infrared detectors

CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers

Evolution of Deep Defect Centers in Semi-Insulating 4H-SiC Substrates under High-Temperature Annealing

Characterization of erbium chloride seeded gallium nitride nanocrystals

The distribution function of the variance of Allan: theory and practice

Nature of luminescence and strain in gallium nitride nanowires

Open Core Dislocations and Surface Energy of SiC

Propagation of stacking faults from surface damage in SiC PiN diodes

Global Sea Level Rise: RECENT PROGRESS AND CHALLENGES FOR THE DECADE TO COME

Evolution of D1-Defect Center in 4H-SiC during High Temperature Annealing

Structure and Orientation Determination of Metal-Oxide Nanostructures by Electron Backscatter Diffraction

Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-Ray Topography

Recombination Behaviour of Stacking Faults in SiC p-i-n Diodes

Performance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free Epilayers

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