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Considering the influence of heating rate, complex hardening and dynamic strain aging in AISI 1045 machining: experiments and simulations

CIRP annals, 2021, Vol.70 (1), p.49-52

2021

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Effect of fiber gripping method on the single fiber tensile test: II. Comparison of fiber gripping materials and loading rates

Journal of materials science, 2015-03, Vol.50 (5), p.2049-2060

2015

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Tensile strength measurements of frangible bullets using the diametral compression test

International journal of impact engineering, 2008-06, Vol.35 (6), p.511-520

2008

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Identifying the dynamic compressive stiffness of a prospective biomimetic elastomer by an inverse method

Journal of the mechanical behavior of biomedical materials, 2012-10, Vol.14, p.89-100

2012

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Effect of austenite fraction and stability on strength-hardening-ductility in additively manufactured 17-4 PH stainless steel containing nitrogen

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 2023-06, Vol.878 (C), p.145180, Article 145180

2023

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DYNAMIC PROPERTIES FOR MODELING AND SIMULATION OF MACHINING: EFFECT OF PEARLITE TO AUSTENITE PHASE TRANSITION ON FLOW STRESS IN AISI 1075 STEEL

Machining science and technology, 2011-01, Vol.15 (1), p.1-20

2011

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Introduction of a constitutive material model considering variable carbon content for cutting simulation

Procedia CIRP, 2023, Vol.117, p.305-310

2023

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On the Mechanical Response of Aluminum Alloy 6061-T6 under Extreme Strains and Strain Rates, and Rapid Heating

Manufacturing letters, 2022-09, Vol.33, p.292-301

2022

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VACUUM-ASSISTED GAS ATOMIZATION OF LIQUID METAL

Atomization and sprays, 2012, Vol.22 (7), p.581-601

2012

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Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition

Journal of crystal growth, 2009-07, Vol.311 (15), p.3817-3823

2009

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Real-time use of instantaneous wave–free ratio: Results of the ADVISE in-practice : An international, multicenter evaluation of instantaneous wave–free ratio in clinical practice

The American heart journal, 2014-11, Vol.168 (5), p.739-748

2014

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Flow modulation metalorganic vapor phase epitaxy of GaN at temperatures below 600 ºC

Semiconductor science and technology, 2020-09, Vol.35 (9), p.95014

2020

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2DEGs formed in AlN/GaN HEMT structures with AlN grown at low temperature

Applied physics letters, 2021-05, Vol.118 (22)

2021

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560 nm InGaN micro-LEDs on low-defect-density and scalable (20-21) semipolar GaN on patterned sapphire substrates

Optics express, 2020-06, Vol.28 (12), p.18150-18159

2020

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Properties of AlN/GaN Heterostructures Grown at Low Growth Temperatures with Ammonia and Dimethylhydrazine

Crystals (Basel), 2021-11, Vol.11 (11), p.1412

2021

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Properties of high to ultrahigh Si-doped GaN grown at 550 °C by flow modulated metalorganic chemical vapor deposition

Applied physics letters, 2023-04, Vol.122 (14)

2023

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Inverted N-polar blue and blue-green light emitting diodes with high power grown by metalorganic chemical vapor deposition

Applied physics letters, 2022-03, Vol.120 (10)

2022

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Investigation of Mg δ-doping for low resistance N-polar p-GaN films grown at reduced temperatures by MOCVD

Semiconductor science and technology, 2018-09, Vol.33 (9), p.95014

2018

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Metalorganic chemical vapor deposition and characterization of (Al,Si)O dielectrics for GaN-based devices

Japanese Journal of Applied Physics, 2016-02, Vol.55 (2), p.21501

2016

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Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN

Journal of applied physics, 2018-02, Vol.123 (5)

2018

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Understanding the Heterogeneity of Labor and Delivery Units: Using Design Thinking Methodology to Assess Environmental Factors that Contribute to Safety in Childbirth

American journal of perinatology, 2020-05, Vol.37 (6), p.638-646

2020

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Growth and characterization of In-polar and N-polar InAlN by metal organic chemical vapor deposition

Journal of applied physics, 2010-02, Vol.107 (3), p.033509-033509-7

2010

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Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics, 2003-01, Vol.42 (1), p.50-53

2003

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Electrical and structural characterization of Mg-doped p-type Al0.69Ga0.31N films on SiC substrate

Journal of applied physics, 2007-03, Vol.101 (5)

2007

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TCT-624 Real-time utilisation of instant wave-free ratio (iFR) is feasible when performed by clinicians: results of the ADVISE in-practice, an international, multi-centre evaluation of iFR in clinical practice

Journal of the American College of Cardiology, 2013-10, Vol.62 (18), p.B189-B189

2013

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Considering the influence of heating rate, complex hardening and dynamic strain aging in AISI 1045 machining: experiments and simulations

Effect of fiber gripping method on the single fiber tensile test: II. Comparison of fiber gripping materials and loading rates

Tensile strength measurements of frangible bullets using the diametral compression test

Identifying the dynamic compressive stiffness of a prospective biomimetic elastomer by an inverse method

Effect of austenite fraction and stability on strength-hardening-ductility in additively manufactured 17-4 PH stainless steel containing nitrogen

DYNAMIC PROPERTIES FOR MODELING AND SIMULATION OF MACHINING: EFFECT OF PEARLITE TO AUSTENITE PHASE TRANSITION ON FLOW STRESS IN AISI 1075 STEEL

Introduction of a constitutive material model considering variable carbon content for cutting simulation

On the Mechanical Response of Aluminum Alloy 6061-T6 under Extreme Strains and Strain Rates, and Rapid Heating

VACUUM-ASSISTED GAS ATOMIZATION OF LIQUID METAL

Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition

Real-time use of instantaneous wave–free ratio: Results of the ADVISE in-practice : An international, multicenter evaluation of instantaneous wave–free ratio in clinical practice

Flow modulation metalorganic vapor phase epitaxy of GaN at temperatures below 600 ºC

2DEGs formed in AlN/GaN HEMT structures with AlN grown at low temperature

560 nm InGaN micro-LEDs on low-defect-density and scalable (20-21) semipolar GaN on patterned sapphire substrates

Properties of AlN/GaN Heterostructures Grown at Low Growth Temperatures with Ammonia and Dimethylhydrazine

Properties of high to ultrahigh Si-doped GaN grown at 550 °C by flow modulated metalorganic chemical vapor deposition

Inverted N-polar blue and blue-green light emitting diodes with high power grown by metalorganic chemical vapor deposition

Investigation of Mg δ-doping for low resistance N-polar p-GaN films grown at reduced temperatures by MOCVD

Metalorganic chemical vapor deposition and characterization of (Al,Si)O dielectrics for GaN-based devices

Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN

Understanding the Heterogeneity of Labor and Delivery Units: Using Design Thinking Methodology to Assess Environmental Factors that Contribute to Safety in Childbirth

Growth and characterization of In-polar and N-polar InAlN by metal organic chemical vapor deposition

Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition

Electrical and structural characterization of Mg-doped p-type Al0.69Ga0.31N films on SiC substrate

TCT-624 Real-time utilisation of instant wave-free ratio (iFR) is feasible when performed by clinicians: results of the ADVISE in-practice, an international, multi-centre evaluation of iFR in clinical practice

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