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Enhanced photogeneration of carriers in a semiconductor via coupling across a nonisothermal nanoscale vacuum gap

Applied physics letters, 2001-09, Vol.79 (12), p.1894-1896

2001

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High optical quality GaN nanopillar arrays

Applied physics letters, 2005-02, Vol.86 (7), p.071917-071917-3

2005

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Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template

Applied physics letters, 2005-12, Vol.87 (25)

2005

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Fabrication and properties of nanoporous GaN films

Applied physics letters, 2004-08, Vol.85 (5), p.816-818

2004

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Very large radiative transfer over small distances from a black body for thermophotovoltaic applications

IEEE transactions on electron devices, 2000-01, Vol.47 (1), p.241-249

2000

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Three-dimensional multiwaveguide probe array for light delivery to distributed brain circuits

Optics letters, 2012-12, Vol.37 (23), p.4841

2012

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Physical model of depletion and accumulation in quantum-well infrared photodetectors

IEEE journal of quantum electronics, 1999-11, Vol.35 (11), p.1673-1684

1999

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Epitaxial growth of high quality AlGaAs/GaAs structures on atomically flat GaAs surfaces in deep dielectric windows cleaned using atomic hydrogen

Thin solid films, 2002, Vol.402 (1), p.43-48

2002

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Improvement of microstructural and optical properties of GaN layer on sapphire by nanoscale lateral epitaxial overgrowth

Applied physics letters, 2006-05, Vol.88 (21)

2006

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InGaN nanorings and nanodots by selective area epitaxy

Applied physics letters, 2005-10, Vol.87 (14), p.143111-143111-3

2005

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Transverse electric and transverse magnetic polarization active intersubband transitions in narrow InGaAs quantum wells

Applied physics letters, 1992-10, Vol.61 (17), p.2078-2080

1992

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Electron intersubband transitions to 0.8 eV (1.55 μm) in InGaAs/AlAs single quantum wells

Applied physics letters, 1994-02, Vol.64 (8), p.986-987

1994

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Practical OEICs based on the monolithic integration of GaAs-InGaP LEDs with commercial GaAs VLSI electronics

IEEE journal of quantum electronics, 1998-07, Vol.34 (7), p.1117-1123

1998

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Optical properties of (100)- and (111)-oriented GaInAs/GaAs strained-layer superlattices

Physical review letters, 1989-02, Vol.62 (6), p.649-652

1989

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Theoretical gain of strained-layer semiconductor lasers in the large strain regime

IEEE journal of quantum electronics, 1989-02, Vol.25 (2), p.171-178

1989

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Bromine ion-beam-assisted etching of III-V semiconductors

Journal of electronic materials, 1999-04, Vol.28 (4), p.364-368

1999

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The impact of CMP and underlying back-end topographical features on losses in deposited dielectric waveguides

IEEE journal of quantum electronics, 2004-12, Vol.40 (12), p.1709-1714

2004

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Strain effects in the intersubband transitions of narrow InGaAs quantum wells

Applied physics letters, 1993-05, Vol.62 (19), p.2413-2415

1993

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Theory, fabrication and characterization of quantum well infrared photodetectors

Materials science & engineering. R, Reports : a review journal, 2000-07, Vol.28 (3), p.65-147

2000

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Reflection high-energy electron diffraction intensity oscillation study of InGaAs and InAlAs on InP: application to pseudomorphic heterostructures

Applied physics letters, 1987-10, Vol.51 (15), p.1173-1175

1987

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High-temperature stability of refractory-metal VLSI GaAs MESFETs

IEEE electron device letters, 1994-03, Vol.15 (3), p.106-108

1994

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Absorption spectroscopy on room temperature excitonic transitions in strained layer InGaAs/InGaAlAs multiquantum-well structures

Journal of applied physics, 1993-07, Vol.74 (1), p.570-578

1993

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Interconnection of a two-dimensional array of vertical-cavity surface-emitting lasers to a receiver array by means of a fiber image guide

Applied Optics, 2000-02, Vol.39 (5), p.683

2000

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Observation of 1.798 μm intersubband transition in InGaAs/AlAs pseudomorphic quantum well heterostructures

Applied physics letters, 1993-09, Vol.63 (12), p.1663-1665

1993

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Intrasubband plasmons in delta-doped InGaAs single quantum wells

Applied physics letters, 1993-09, Vol.63 (11), p.1534-1536

1993

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Enhanced photogeneration of carriers in a semiconductor via coupling across a nonisothermal nanoscale vacuum gap

High optical quality GaN nanopillar arrays

Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template

Fabrication and properties of nanoporous GaN films

Very large radiative transfer over small distances from a black body for thermophotovoltaic applications

Three-dimensional multiwaveguide probe array for light delivery to distributed brain circuits

Physical model of depletion and accumulation in quantum-well infrared photodetectors

Epitaxial growth of high quality AlGaAs/GaAs structures on atomically flat GaAs surfaces in deep dielectric windows cleaned using atomic hydrogen

Improvement of microstructural and optical properties of GaN layer on sapphire by nanoscale lateral epitaxial overgrowth

InGaN nanorings and nanodots by selective area epitaxy

Transverse electric and transverse magnetic polarization active intersubband transitions in narrow InGaAs quantum wells

Electron intersubband transitions to 0.8 eV (1.55 μm) in InGaAs/AlAs single quantum wells

Practical OEICs based on the monolithic integration of GaAs-InGaP LEDs with commercial GaAs VLSI electronics

Optical properties of (100)- and (111)-oriented GaInAs/GaAs strained-layer superlattices

Theoretical gain of strained-layer semiconductor lasers in the large strain regime

Bromine ion-beam-assisted etching of III-V semiconductors

The impact of CMP and underlying back-end topographical features on losses in deposited dielectric waveguides

Strain effects in the intersubband transitions of narrow InGaAs quantum wells

Theory, fabrication and characterization of quantum well infrared photodetectors

Reflection high-energy electron diffraction intensity oscillation study of InGaAs and InAlAs on InP: application to pseudomorphic heterostructures

High-temperature stability of refractory-metal VLSI GaAs MESFETs

Absorption spectroscopy on room temperature excitonic transitions in strained layer InGaAs/InGaAlAs multiquantum-well structures

Interconnection of a two-dimensional array of vertical-cavity surface-emitting lasers to a receiver array by means of a fiber image guide

Observation of 1.798 μm intersubband transition in InGaAs/AlAs pseudomorphic quantum well heterostructures

Intrasubband plasmons in delta-doped InGaAs single quantum wells

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