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Methodology for parameters extraction with undoped junctionless EZ-FETs

Solid-state electronics, 2024-07, Vol.217, p.108897, Article 108897

2024

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Improvement in U-Shaped Channel SOI Lateral IGBT for Wider Reverse Bias Safe Operating Area

IEEE transactions on electron devices, 2023-03, Vol.70 (3), p.1-5

2023

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IEEE_Xplore

A Silicon-On-Insulator Lateral IGBT With Segmented Trenches for Improving Short-Circuit Withstanding Capability

IEEE transactions on electron devices, 2022-07, Vol.69 (7), p.4042-4045

2022

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IEEE_Xplore

Design insights into RF/analog and linearity/distortion of spacer engineered multi‐fin SOI FET for terahertz applications

International journal of RF and microwave computer-aided engineering, 2021-12, Vol.31 (12), p.n/a

2021

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Influence of Termination Isolation Deep-Oxide Trenches on Short-Circuit Capability in Silicon-On-Insulator Lateral IGBT

IEEE transactions on electron devices, 2022-10, Vol.69 (10), p.5944-5947

2022

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IEEE_Xplore

An Efficient Breakdown Characterization for D/T-RESURF SOI LDMOS Using Important Structure Parameters Selection Technique

IEEE transactions on electron devices, 2024-05, Vol.71 (5), p.2869-2875

2024

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IEEE_Xplore

Charge Collection in SOI Microdosimeters and their Radiation Hardness

IEEE transactions on nuclear science, 2023-04, Vol.70 (4), p.1-1

2023

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IEEE_Xplore

Total-Ionizing-Dose Radiation-Induced Dual-Channel Leakage Current at Unclosed Edge Termination for High Voltage SOI LDMOS

IEEE transactions on electron devices, 2021-06, Vol.68 (6), p.2861-2866

2021

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IEEE_Xplore

Design of E- and W-Band Low-Noise Amplifiers in 22-nm CMOS FD-SOI

IEEE transactions on microwave theory and techniques, 2020-01, Vol.68 (1), p.132-143

2020

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IEEE_Xplore

28 GHz Doherty Power Amplifier in CMOS SOI With 28% Back-Off PAE

IEEE microwave and wireless components letters, 2018-05, Vol.28 (5), p.446-448

2018

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IEEE_Xplore

A 1.7-dB Minimum NF, 22-32-GHz Low-Noise Feedback Amplifier With Multistage Noise Matching in 22-nm FD-SOI CMOS

IEEE journal of solid-state circuits, 2020-05, Vol.55 (5), p.1239-1248

2020

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IEEE_Xplore

Compact and Slow-Wave Tunable 28 nm CMOS-SOI Twisted Hybrid Couplers for 5G Applications

IEEE transactions on microwave theory and techniques, 2024-04, Vol.72 (4), p.2486-2497

2024

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IEEE_Xplore

A 38 dB Gain, Low-Loss, Flat Array Antenna for 320-400 GHz Enabled by Silicon-on-Insulator Micromachining

IEEE transactions on antennas and propagation, 2020-06, Vol.68 (6), p.4450-4458

2020

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A Novel S-Gate-Assisted SOI n-MOSFET for Total Ionizing Dose Radiation Reinforcement

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.956-961

2022

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IEEE_Xplore

A 5G 28-GHz Common-Leg T/R Front-End in 45-nm CMOS SOI With 3.7-dB NF and −30-dBc EVM With 64-QAM/500-MBaud Modulation

IEEE transactions on microwave theory and techniques, 2019-01, Vol.67 (1), p.318-331

2019

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IEEE_Xplore

A Novel 1T-DRAM Fabricated With 22 nm FD-SOI Technology

IEEE electron device letters, 2024-04, Vol.45 (4), p.558-561

2024

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IEEE_Xplore

A 28-GHz SOI-CMOS Doherty Power Amplifier With a Compact Transformer-Based Output Combiner

IEEE transactions on microwave theory and techniques, 2021-06, Vol.69 (6), p.2795-2808

2021

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IEEE_Xplore

High-Voltage Integrated Circuits: History, State of the Art, and Future Prospects

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.659-673

2017

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IEEE_Xplore

Robust Ultra-Low Power Non-Volatile Logic-in-Memory Circuits in FD-SOI Technology

IEEE transactions on circuits and systems. I, Regular papers, 2017-04, Vol.64 (4), p.847-857

2017

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IEEE_Xplore

A Novel Low Power Photodetector Using SOI/Bulk Hybrid Technology with High Responsivity and Detectivity Optimization Capability

IEEE electron device letters, 2024-01, Vol.45 (1), p.1-1

2024

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IEEE_Xplore

Band-to-Band Tunneling Based Ultra-Energy-Efficient Silicon Neuron

IEEE transactions on electron devices, 2020-06, Vol.67 (6), p.2614-2620

2020

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IEEE_Xplore

A 30-GHz CMOS SOI Outphasing Power Amplifier With Current Mode Combining for High Backoff Efficiency and Constant Envelope Operation

IEEE journal of solid-state circuits, 2020-05, Vol.55 (5), p.1411-1421

2020

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IEEE_Xplore

Simulation Study of Novel Trench Gate U-Shaped Channel SOI Lateral IGBTs With Suppressed Gate Voltage Overshoot and Reduced di/dt

IEEE transactions on electron devices, 2021-08, Vol.68 (8), p.3930-3935

2021

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IEEE_Xplore

Semiconductor Devices for Space Use and Radiation Hardening Technique

The Journal of The Institute of Electrical Engineers of Japan, 2009/11/01, Vol.129(11), pp.739-742

2009

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A 20-42-GHz IQ Receiver in 22-nm CMOS FD-SOI With 2.7-4.2-dB NF and −25-dBm IP1dB for Wideband 5G Systems

IEEE transactions on microwave theory and techniques, 2021-11, Vol.69 (11), p.4951-4960

2021

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IEEE_Xplore

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Methodology for parameters extraction with undoped junctionless EZ-FETs

Improvement in U-Shaped Channel SOI Lateral IGBT for Wider Reverse Bias Safe Operating Area

A Silicon-On-Insulator Lateral IGBT With Segmented Trenches for Improving Short-Circuit Withstanding Capability

Design insights into RF/analog and linearity/distortion of spacer engineered multi‐fin SOI FET for terahertz applications

Influence of Termination Isolation Deep-Oxide Trenches on Short-Circuit Capability in Silicon-On-Insulator Lateral IGBT

An Efficient Breakdown Characterization for D/T-RESURF SOI LDMOS Using Important Structure Parameters Selection Technique

Charge Collection in SOI Microdosimeters and their Radiation Hardness

Total-Ionizing-Dose Radiation-Induced Dual-Channel Leakage Current at Unclosed Edge Termination for High Voltage SOI LDMOS

Design of E- and W-Band Low-Noise Amplifiers in 22-nm CMOS FD-SOI

28 GHz Doherty Power Amplifier in CMOS SOI With 28% Back-Off PAE

A 1.7-dB Minimum NF, 22-32-GHz Low-Noise Feedback Amplifier With Multistage Noise Matching in 22-nm FD-SOI CMOS

Compact and Slow-Wave Tunable 28 nm CMOS-SOI Twisted Hybrid Couplers for 5G Applications

A 38 dB Gain, Low-Loss, Flat Array Antenna for 320-400 GHz Enabled by Silicon-on-Insulator Micromachining

A Novel S-Gate-Assisted SOI n-MOSFET for Total Ionizing Dose Radiation Reinforcement

A 5G 28-GHz Common-Leg T/R Front-End in 45-nm CMOS SOI With 3.7-dB NF and −30-dBc EVM With 64-QAM/500-MBaud Modulation

A Novel 1T-DRAM Fabricated With 22 nm FD-SOI Technology

A 28-GHz SOI-CMOS Doherty Power Amplifier With a Compact Transformer-Based Output Combiner

High-Voltage Integrated Circuits: History, State of the Art, and Future Prospects

Robust Ultra-Low Power Non-Volatile Logic-in-Memory Circuits in FD-SOI Technology

A Novel Low Power Photodetector Using SOI/Bulk Hybrid Technology with High Responsivity and Detectivity Optimization Capability

Band-to-Band Tunneling Based Ultra-Energy-Efficient Silicon Neuron

A 30-GHz CMOS SOI Outphasing Power Amplifier With Current Mode Combining for High Backoff Efficiency and Constant Envelope Operation

Simulation Study of Novel Trench Gate U-Shaped Channel SOI Lateral IGBTs With Suppressed Gate Voltage Overshoot and Reduced di/dt

Semiconductor Devices for Space Use and Radiation Hardening Technique

A 20-42-GHz IQ Receiver in 22-nm CMOS FD-SOI With 2.7-4.2-dB NF and −25-dBm IP1dB for Wideband 5G Systems

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