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A 30-GHz CMOS SOI Outphasing Power Amplifier With Current Mode Combining for High Backoff Efficiency and Constant Envelope Operation

IEEE journal of solid-state circuits, 2020-05, Vol.55 (5), p.1411-1421

2020

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A 20-42-GHz IQ Receiver in 22-nm CMOS FD-SOI With 2.7-4.2-dB NF and −25-dBm IP1dB for Wideband 5G Systems

IEEE transactions on microwave theory and techniques, 2021-11, Vol.69 (11), p.4951-4960

2021

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Robust Ultra-Low Power Non-Volatile Logic-in-Memory Circuits in FD-SOI Technology

IEEE transactions on circuits and systems. I, Regular papers, 2017-04, Vol.64 (4), p.847-857

2017

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A Novel Low Power Photodetector Using SOI/Bulk Hybrid Technology with High Responsivity and Detectivity Optimization Capability

IEEE electron device letters, 2024-01, Vol.45 (1), p.1-1

2024

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Band-to-Band Tunneling Based Ultra-Energy-Efficient Silicon Neuron

IEEE transactions on electron devices, 2020-06, Vol.67 (6), p.2614-2620

2020

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Majorana bound states in semiconducting nanostructures

Journal of applied physics, 2021-08, Vol.130 (8)

2021

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Simulation Study of Novel Trench Gate U-Shaped Channel SOI Lateral IGBTs With Suppressed Gate Voltage Overshoot and Reduced di/dt

IEEE transactions on electron devices, 2021-08, Vol.68 (8), p.3930-3935

2021

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High-Performance Lateral Avalanche Photodiode Based on Silicon-on-Insulator Structure

IEEE electron device letters, 2022-07, Vol.43 (7), p.1077-1080

2022

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Semiconductor Devices for Space Use and Radiation Hardening Technique

The Journal of The Institute of Electrical Engineers of Japan, 2009/11/01, Vol.129(11), pp.739-742

2009

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Novel Snapback-Free SOI LIGBT With Shorted Anode and Trench Barriers

IEEE transactions on electron devices, 2021-05, Vol.68 (5), p.2408-2413

2021

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A 22-nm FDSOI CMOS Low-Noise Active Balun Achieving

IEEE journal of solid-state circuits, 2022-01, Vol.57 (5), p.1432

2022

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Impact of Back-Gate Biasing on the Transport Properties of 22 nm FD-SOI MOSFETs at Cryogenic Temperatures

IEEE transactions on electron devices, 2022-10, Vol.69 (10), p.5417-5423

2022

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Optimizations of Si PIN diode phase-shifter for controlling MZM quadrature bias point using SOI rib waveguide technology

Optics and laser technology, 2021-06, Vol.138, p.106844, Article 106844

2021

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Detection of marker miRNAs in plasma using SOI-NW biosensor

Sensors and actuators. B, Chemical, 2018-05, Vol.261, p.566-571

2018

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Experimental Analysis and Modeling of Self-Heating and Thermal Coupling in 28 nm FD-SOI CMOS Transistors Down to Cryogenic Temperatures

IEEE transactions on electron devices, 2024-04, Vol.71 (4), p.2598-2604

2024

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Dynamic Thermal Management in SOI Transistors Using Holey Silicon-Based Thermoelectric Cooling

IEEE transactions on electron devices, 2024-04, Vol.71 (4), p.2577-2584

2024

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Symmetric BSIM-SOI-Part I: A Compact Model for Dynamically Depleted SOI MOSFETs

IEEE transactions on electron devices, 2024-04, Vol.71 (4), p.2284-2292

2024

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Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2/HfO2 Gate Dielectrics

IEEE transactions on nuclear science, 2020-01, Vol.67 (1), p.245-252

2020

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Cavity-BOX SOI: Advanced Silicon Substrate with Pre-Patterned BOX for Monolithic MEMS Fabrication

Micromachines (Basel), 2021-04, Vol.12 (4), p.414

2021

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Characterization and Modeling of Silicon-on-Insulator Lateral Bipolar Junction Transistors at Liquid Helium Temperature

IEEE transactions on electron devices, 2024-06, Vol.71 (6), p.3525-3531

2024

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Total Ionizing Dose Effects on 22 nm UTBB FD-SOI MOSFETs up to 100 Mrad(Si)

IEEE transactions on electron devices, 2024-06, Vol.71 (6), p.3490-3497

2024

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Reliability Modeling and Analysis of Hot-Carrier Degradation in Multiple-Fin SOI n-Channel FinFETs With Self-Heating

IEEE transactions on electron devices, 2019-05, Vol.66 (5), p.2075-2080

2019

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Ultrathin Body and Buried Oxide SOI MOSFETs With Non-LDD Source/Drain Extensions: A Simulation Study

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.412-417

2024

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Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor: Current Technologies and Prospects

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.381-392

2024

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Symmetric BSIM-SOI-Part II: A Compact Model for Partially Depleted SOI MOSFETs

IEEE transactions on electron devices, 2024-04, Vol.71 (4), p.2293-2300

2024

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A 30-GHz CMOS SOI Outphasing Power Amplifier With Current Mode Combining for High Backoff Efficiency and Constant Envelope Operation

A 20-42-GHz IQ Receiver in 22-nm CMOS FD-SOI With 2.7-4.2-dB NF and −25-dBm IP1dB for Wideband 5G Systems

Robust Ultra-Low Power Non-Volatile Logic-in-Memory Circuits in FD-SOI Technology

A Novel Low Power Photodetector Using SOI/Bulk Hybrid Technology with High Responsivity and Detectivity Optimization Capability

Band-to-Band Tunneling Based Ultra-Energy-Efficient Silicon Neuron

Majorana bound states in semiconducting nanostructures

Simulation Study of Novel Trench Gate U-Shaped Channel SOI Lateral IGBTs With Suppressed Gate Voltage Overshoot and Reduced di/dt

High-Performance Lateral Avalanche Photodiode Based on Silicon-on-Insulator Structure

Semiconductor Devices for Space Use and Radiation Hardening Technique

Novel Snapback-Free SOI LIGBT With Shorted Anode and Trench Barriers

A 22-nm FDSOI CMOS Low-Noise Active Balun Achieving

Impact of Back-Gate Biasing on the Transport Properties of 22 nm FD-SOI MOSFETs at Cryogenic Temperatures

Optimizations of Si PIN diode phase-shifter for controlling MZM quadrature bias point using SOI rib waveguide technology

Detection of marker miRNAs in plasma using SOI-NW biosensor

Experimental Analysis and Modeling of Self-Heating and Thermal Coupling in 28 nm FD-SOI CMOS Transistors Down to Cryogenic Temperatures

Dynamic Thermal Management in SOI Transistors Using Holey Silicon-Based Thermoelectric Cooling

Symmetric BSIM-SOI-Part I: A Compact Model for Dynamically Depleted SOI MOSFETs

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2/HfO2 Gate Dielectrics

Cavity-BOX SOI: Advanced Silicon Substrate with Pre-Patterned BOX for Monolithic MEMS Fabrication

Characterization and Modeling of Silicon-on-Insulator Lateral Bipolar Junction Transistors at Liquid Helium Temperature

Total Ionizing Dose Effects on 22 nm UTBB FD-SOI MOSFETs up to 100 Mrad(Si)

Reliability Modeling and Analysis of Hot-Carrier Degradation in Multiple-Fin SOI n-Channel FinFETs With Self-Heating

Ultrathin Body and Buried Oxide SOI MOSFETs With Non-LDD Source/Drain Extensions: A Simulation Study

Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor: Current Technologies and Prospects

Symmetric BSIM-SOI-Part II: A Compact Model for Partially Depleted SOI MOSFETs

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