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Continuous Improvements and Future Challenges of Air Pollution Control at an Advanced Semiconductor Fab

Aerosol and Air Quality Research, 2023-05, Vol.23 (5), p.1-19

2023

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Abnormal Dual Channel Formation Induced by Hydrogen Diffusion From SiNx Interlayer Dielectric in Top Gate a-InGaZnO Transistors

IEEE electron device letters, 2017-03, Vol.38 (3), p.334-337

2017

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Systematic Analysis of High-Current Effects in Flexible Polycrystalline-Silicon Transistors Fabricated on Polyimide

IEEE transactions on electron devices, 2017-08, Vol.64 (8), p.3167-3173

2017

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Achieving a foldable and durable OLED display with BT.2020 color space using innovative color filter structure

Journal of the Society for Information Display, 2017-04, Vol.25 (4), p.229-239

2017

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Performance improvement of blue quantum dot light-emitting diodes by facilitating electron transportation and suppressing electroplex emission

Chemical engineering journal (Lausanne, Switzerland : 1996), 2021-08, Vol.417, p.127983, Article 127983

2021

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Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low-Temperature Poly-Si Thin-Film Transistors

ACS applied materials & interfaces, 2017-04, Vol.9 (13), p.11942-11949

2017

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62-2: Novel Thin Film Encapsulation Structure for Wearable Plastic AMOLED Display

SID International Symposium Digest of technical papers, 2016-05, Vol.47 (1), p.841-843

2016

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Cyclical Annealing Technique To Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors

ACS applied materials & interfaces, 2018-08, Vol.10 (31), p.25866-25870

2018

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Amorphous Titanium Oxide Semiconductors on Quasi-Crystal-Like InGaZnO Channels for Thin Film Transistor Applications

Journal of display technology, 2015-06, Vol.11 (6), p.506-511

2015

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Structural and electrical characteristics of thin film transistor employing an oriented crystalline InGaZnO channel

Japanese Journal of Applied Physics, 2015-04, Vol.54 (4S), p.4-1-04DF05-5

2015

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4.2: Study of ACF Bonding Technology in Flexible Display Module Packages

SID International Symposium Digest of technical papers, 2015-06, Vol.46 (1), p.12-15

2015

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69.3: a-IGZO TFTs Reliability Improvement by Dual Gate Structure

SID International Symposium Digest of technical papers, 2015-06, Vol.46 (1), p.1203-1205

2015

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65‐4: Investigation on Blue Quantum‐Dot Light‐Emitting Diode with Positive Aging Treatment

SID International Symposium Digest of technical papers, 2021-05, Vol.52 (1), p.957-958

2021

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65‐3: Green Top‐emission Quantum Dot Light‐emitting Diodes (TE‐QLED) with Normal and Inverted Structure

SID International Symposium Digest of technical papers, 2020-08, Vol.51 (1), p.968-970

2020

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Correlation of thermal annealing effect, crystallinity and electrical characteristics in c-axis crystallized InGaZnO thin-film transistors

Journal of alloys and compounds, 2015-09, Vol.643, p.S187-S192

2015

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41‐3: 17.3 Inch UHD Resolution AMOLED Panel Fabricated by Ink Jet Printing Process

SID International Symposium Digest of technical papers, 2020-08, Vol.51 (1), p.595-598

2020

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P‐120: Degradation Mechanism and Lifetime Improvement of Blue Quantum‐Dot Light‐Emitting Diodes

SID International Symposium Digest of technical papers, 2019-06, Vol.50 (1), p.1700-1701

2019

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P‐168: Picture Quality and Uniformity Study on High Resolution Top Emission OLED Display Fabricated by Ink Jet Printing Process

SID International Symposium Digest of technical papers, 2019-06, Vol.50 (1), p.1870-1872

2019

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21.3: A 65-inch Amorphous Oxide Thin Film Transistors Active-Matrix Organic Light-Emitting Diode Television Using Side by Side and Fine Metal Mask Technology

SID International Symposium Digest of technical papers, 2013-06, Vol.44 (1), p.247-250

2013

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47‐2: Invited Paper: Highly Transparent AMOLED for Augmented Reality Applications

SID International Symposium Digest of technical papers, 2018-05, Vol.49 (1), p.621-623

2018

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P‐108: Positive Aging Mechanisms for High‐efficiency Blue Quantum Dot Light‐emitting Diodes

SID International Symposium Digest of technical papers, 2018-05, Vol.49 (1), p.1622-1624

2018

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47‐3: High Efficiency and High PPI AMOLED with Cavity Tuned by Inkjet Printed Hole Injection Layer

SID International Symposium Digest of technical papers, 2018-05, Vol.49 (1), p.624-626

2018

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9.3: A 32-inch Active-Matrix Organic Light-Emitting Diode Television Panel Driving by Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors

SID International Symposium Digest of technical papers, 2012-06, Vol.43 (1), p.92-94

2012

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24-5L: Late-News Paper: Ultra Durable and Foldable AMOLED Display Capable of Withstanding One Million Folding Cycles

SID International Symposium Digest of technical papers, 2016-05, Vol.47 (1), p.305-307

2016

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71.2: Mechanical Characteristics of Flexible AMOLED Display

SID International Symposium Digest of technical papers, 2015-06, Vol.46 (1), p.1047-1050

2015

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Semiconductor Devices
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Active Matrix Displays
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Continuous Improvements and Future Challenges of Air Pollution Control at an Advanced Semiconductor Fab

Abnormal Dual Channel Formation Induced by Hydrogen Diffusion From SiNx Interlayer Dielectric in Top Gate a-InGaZnO Transistors

Systematic Analysis of High-Current Effects in Flexible Polycrystalline-Silicon Transistors Fabricated on Polyimide

Achieving a foldable and durable OLED display with BT.2020 color space using innovative color filter structure

Performance improvement of blue quantum dot light-emitting diodes by facilitating electron transportation and suppressing electroplex emission

Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low-Temperature Poly-Si Thin-Film Transistors

62-2: Novel Thin Film Encapsulation Structure for Wearable Plastic AMOLED Display

Cyclical Annealing Technique To Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors

Amorphous Titanium Oxide Semiconductors on Quasi-Crystal-Like InGaZnO Channels for Thin Film Transistor Applications

Structural and electrical characteristics of thin film transistor employing an oriented crystalline InGaZnO channel

4.2: Study of ACF Bonding Technology in Flexible Display Module Packages

69.3: a-IGZO TFTs Reliability Improvement by Dual Gate Structure

65‐4: Investigation on Blue Quantum‐Dot Light‐Emitting Diode with Positive Aging Treatment

65‐3: Green Top‐emission Quantum Dot Light‐emitting Diodes (TE‐QLED) with Normal and Inverted Structure

Correlation of thermal annealing effect, crystallinity and electrical characteristics in c-axis crystallized InGaZnO thin-film transistors

41‐3: 17.3 Inch UHD Resolution AMOLED Panel Fabricated by Ink Jet Printing Process

P‐120: Degradation Mechanism and Lifetime Improvement of Blue Quantum‐Dot Light‐Emitting Diodes

P‐168: Picture Quality and Uniformity Study on High Resolution Top Emission OLED Display Fabricated by Ink Jet Printing Process

21.3: A 65-inch Amorphous Oxide Thin Film Transistors Active-Matrix Organic Light-Emitting Diode Television Using Side by Side and Fine Metal Mask Technology

47‐2: Invited Paper: Highly Transparent AMOLED for Augmented Reality Applications

P‐108: Positive Aging Mechanisms for High‐efficiency Blue Quantum Dot Light‐emitting Diodes

47‐3: High Efficiency and High PPI AMOLED with Cavity Tuned by Inkjet Printed Hole Injection Layer

9.3: A 32-inch Active-Matrix Organic Light-Emitting Diode Television Panel Driving by Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors

24-5L: Late-News Paper: Ultra Durable and Foldable AMOLED Display Capable of Withstanding One Million Folding Cycles

71.2: Mechanical Characteristics of Flexible AMOLED Display

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