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Efficiency improvement analysis of nano-patterned sapphire substrates and semi-transparent superlattice contact layer in UVC light-emitting diodes

Applied physics letters, 2020-12, Vol.117 (26)

2020

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Nafion modified electrochemical sensor integrated with a feedback-loop indium-gallium-zinc oxide thin-film transistor for enhancing dopamine detection limit

Sensors and actuators. A. Physical., 2023-05, Vol.354, p.114287, Article 114287

2023

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Primary sarcoma of the ovary： clinicopathological characteristics, prognostic factors and evaluation of therapy

Chinese medical journal, 2011-05, Vol.124 (9), p.1316-1321

2011

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High-quality AlGaN epitaxy on lattice-engineerable AlN template for high-power UVC light-emitting diodes

Acta materialia, 2022-03, Vol.226, p.117625, Article 117625

2022

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60-GHz Four-Element Phased-Array Transmit/Receive System-in-Package Using Phase Compensation Techniques in 65-nm Flip-Chip CMOS Process

IEEE transactions on microwave theory and techniques, 2012-03, Vol.60 (3), p.743-756

2012

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Recent Advances in the Diagnosis and Management of Acute Myocardial Infarction

Journal of the Chinese Medical Association, 2023-11, Vol.86 (11), p.950-959

2023

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Overcoming the excessive compressive strain in AlGaN epitaxy by introducing high Si-doping in AlN templates

Japanese Journal of Applied Physics, 2020-07, Vol.59 (7), p.70904

2020

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Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes

Journal of applied physics, 2014-03, Vol.115 (11)

2014

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Efficiency enhancement in ultraviolet light-emitting diodes by manipulating polarization effect in electron blocking layer

Applied physics letters, 2013-04, Vol.102 (14)

2013

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Nitride-Based Blue Light-Emitting Diodes Grown With InN/GaN Matrix Quantum Wells

IEEE journal of quantum electronics, 2014-04, Vol.50 (4), p.255-260

2014

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Improved Performance of InGaN/GaN Light-Emitting Diodes With Thin Intermediate Barriers

IEEE photonics technology letters, 2011-11, Vol.23 (22), p.1682-1684

2011

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LSPR effects of Au nanoparticles/ZnO nano-composite films

Sensing and Bio-Sensing Research, 2017-06, Vol.14, p.17-20

2017

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Study of InGaN-Based Light-Emitting Diodes on a Roughened Backside GaN Substrate by a Chemical Wet-Etching Process

IEEE photonics technology letters, 2011-10, Vol.23 (19), p.1373-1375

2011

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Suppression of Nonradiation Recombination by Selected Si Doping in AlGaN Barriers for Ultraviolet Light-Emitting Diodes

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JL15-08JL15-4

2013

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Light Improvement of Near Ultraviolet Light-Emitting Diodes by Utilizing Lattice-Matched InAlGaN as Barrier Layers in Active Region

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JL17-08JL17-3

2013

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Effect of AlGaN Si-Doped Barrier Layer on Optical Properties of Ultraviolet Light-Emitting Diodes

Japanese Journal of Applied Physics, 2013-01, Vol.52 (1), p.01AG04-01AG04-4

2013

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Gemcitabine and ifosfamide as a second-line treatment for cisplatin-refractory metastatic urothelial carcinoma: a phase II study

Anti-cancer drugs, 2007-04, Vol.18 (4), p.487-491

2007

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Robust Edge Coupling Probe Applied in Wafer-Level Optical Testing

2023 IEEE 73rd Electronic Components and Technology Conference (ECTC), 2023, p.1754-1759

2023

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The optimal threading dislocation density of AlN template for micrometer-thick Al0.63Ga0.37N heteroepitaxy

Journal of crystal growth, 2022-12, Vol.600, p.126910, Article 126910

2022

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Four-Wavelengths-Mixed White Light Emitting Diodes with Dual-Wavelength-Pumped Green and Red Phosphors

Japanese Journal of Applied Physics, 2008-08, Vol.47 (8R), p.6317

2008

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60-GHz Four-Element Phased-Array Transmit/Receive System-in-Package Using Phase Compensation Techniques in 65-nm Flip-Chip CMOS Process: Special Issue on Millimeter-Wave Circuits and Systems

IEEE transactions on microwave theory and techniques, 2012, Vol.60 (3), p.743-756

2012

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Efficiency improvement analysis of nano-patterned sapphire substrates and semi-transparent superlattice contact layer in UVC light-emitting diodes

Nafion modified electrochemical sensor integrated with a feedback-loop indium-gallium-zinc oxide thin-film transistor for enhancing dopamine detection limit

Primary sarcoma of the ovary： clinicopathological characteristics, prognostic factors and evaluation of therapy

High-quality AlGaN epitaxy on lattice-engineerable AlN template for high-power UVC light-emitting diodes

60-GHz Four-Element Phased-Array Transmit/Receive System-in-Package Using Phase Compensation Techniques in 65-nm Flip-Chip CMOS Process

Recent Advances in the Diagnosis and Management of Acute Myocardial Infarction

Overcoming the excessive compressive strain in AlGaN epitaxy by introducing high Si-doping in AlN templates

Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes

Efficiency enhancement in ultraviolet light-emitting diodes by manipulating polarization effect in electron blocking layer

Nitride-Based Blue Light-Emitting Diodes Grown With InN/GaN Matrix Quantum Wells

Improved Performance of InGaN/GaN Light-Emitting Diodes With Thin Intermediate Barriers

LSPR effects of Au nanoparticles/ZnO nano-composite films

Study of InGaN-Based Light-Emitting Diodes on a Roughened Backside GaN Substrate by a Chemical Wet-Etching Process

Suppression of Nonradiation Recombination by Selected Si Doping in AlGaN Barriers for Ultraviolet Light-Emitting Diodes

Light Improvement of Near Ultraviolet Light-Emitting Diodes by Utilizing Lattice-Matched InAlGaN as Barrier Layers in Active Region

Effect of AlGaN Si-Doped Barrier Layer on Optical Properties of Ultraviolet Light-Emitting Diodes

Gemcitabine and ifosfamide as a second-line treatment for cisplatin-refractory metastatic urothelial carcinoma: a phase II study

Robust Edge Coupling Probe Applied in Wafer-Level Optical Testing

The optimal threading dislocation density of AlN template for micrometer-thick Al0.63Ga0.37N heteroepitaxy

Four-Wavelengths-Mixed White Light Emitting Diodes with Dual-Wavelength-Pumped Green and Red Phosphors

60-GHz Four-Element Phased-Array Transmit/Receive System-in-Package Using Phase Compensation Techniques in 65-nm Flip-Chip CMOS Process: Special Issue on Millimeter-Wave Circuits and Systems

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