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A comprehensive study of enhanced characteristics with localized transition in interface-type vanadium-based devices

Materials today physics, 2020-06, Vol.13, p.100201, Article 100201

2020

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Fabrication of high-aspect-ratio silicon nanopillar arrays with the conventional reactive ion etching technique

Applied physics. A, Materials science & processing, 2007-02, Vol.86 (2), p.193-196

2007

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Unidirectional threshold resistive switching in Au/NiO/Nb:SrTiO3 devices

Applied physics letters, 2017-06, Vol.110 (23)

2017

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Effect of InGaAs capping layer on the properties of InAs/InGaAs quantum dots and lasers

Applied physics letters, 2003-06, Vol.82 (25), p.4477-4479

2003

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Fast patterning microstructures using inkjet printing conformal masks

Microsystem technologies, 2008-10, Vol.14 (9-11), p.1263-1267

2008

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Fast patterning microstructures using inkjet printing conformal masks

Microsystem technologies : sensors, actuators, systems integration, 2009-02, Vol.15 (2), p.341-341

2009

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Differentiation of oral precancerous stages with optical coherence tomography based on the evaluation of optical scattering properties of oral mucosae

Laser physics, 2013-04, Vol.23 (4), p.45602

2013

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Noninvasive characterization of fractional photothermolysis induced by ablative and non-ablative lasers with optical coherence tomography

Laser physics, 2013-07, Vol.23 (7), p.75604

2013

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Electrical resistivity of electroless nickel coated carbon fibers

Thin solid films, 2001-06, Vol.388 (1), p.143-149

2001

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Temperature dependence of photoreflectance in InAs/GaAs quantum dots

Applied physics letters, 2003-06, Vol.82 (22), p.3895-3897

2003

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Chip-level reliability study of barrier engineered (BE) floating gate (FG) Flash memory devices

2010 IEEE International Reliability Physics Symposium, 2010, p.627-633

2010

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Photoreflectance Study on the Interface of InGaP/GaAs Heterostructures Grown by Gas Source Molecular Beam Epitaxy

Japanese Journal of Applied Physics, 2004, Vol.43 (2), p.735-738

2004

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Comparative study of InAs quantum dots with different InGaAs capping methods

Applied physics letters, 2007-02, Vol.90 (6)

2007

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Improved ozone-tetraethoxysilane oxide reliability for deep submicron inter-metal dielectric applications by deposition of a silane-based oxide underlayer

Thin solid films, 1997-10, Vol.308, p.621-626

1997

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Capacitance of p-n Junctions: Space-Charge Capacitance

Journal of applied physics, 1966-05, Vol.37 (6), p.2337-2342

Chang, Y. F.

1966

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Ultraviolet curing imprint lithography on flexible indium tin oxide substrates

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-05, Vol.24 (3), p.1377-1383

2006

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Defects and acoustic properties of LiAlO2

Applied physics letters, 2006-04, Vol.88 (16)

2006

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Preparation and properties of PZT–PMN–PMS ceramics by molten salt synthesis

Materials letters, 2005-09, Vol.59 (22), p.2790-2793

2005

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The Conduction-Diffusion Theory of Semiconductor Junctions

Journal of applied physics, 1967-01, Vol.38 (2), p.534-544

Chang, Y. F.

1967

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Junction Boundary Conditions for Heterojunctions

Journal of applied physics, 1965-01, Vol.36 (10), p.3350-3350

Chang, Y. F.

1965

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Switch-On Transients in p-n Junctions

Journal of applied physics, 1963-01, Vol.34 (7), p.2056-2060

Chang, Y. F.

1963

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An analysis of the frequency dependence of the capacitance of abrupt P− N junction semiconductor devices

Solid-state electronics, 1970-01, Vol.13 (4), p.473-483

1970

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Abrupt vs Diffused Semiconductor Junctions

Journal of applied physics, 1963-01, Vol.34 (10), p.3137-3138

1963

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Possible Experimental Consequences of Triangle Singularities in Strange-Particle Production Processes

Physical review, 1964-11, Vol.136 (3B), p.B741-B748

1964

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The capacitance of p- n junctions

Solid-state electronics, 1967-01, Vol.10 (4), p.281-287

Chang, Y.F.

1967

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A comprehensive study of enhanced characteristics with localized transition in interface-type vanadium-based devices

Fabrication of high-aspect-ratio silicon nanopillar arrays with the conventional reactive ion etching technique

Unidirectional threshold resistive switching in Au/NiO/Nb:SrTiO3 devices

Effect of InGaAs capping layer on the properties of InAs/InGaAs quantum dots and lasers

Fast patterning microstructures using inkjet printing conformal masks

Fast patterning microstructures using inkjet printing conformal masks

Differentiation of oral precancerous stages with optical coherence tomography based on the evaluation of optical scattering properties of oral mucosae

Noninvasive characterization of fractional photothermolysis induced by ablative and non-ablative lasers with optical coherence tomography

Electrical resistivity of electroless nickel coated carbon fibers

Temperature dependence of photoreflectance in InAs/GaAs quantum dots

Chip-level reliability study of barrier engineered (BE) floating gate (FG) Flash memory devices

Photoreflectance Study on the Interface of InGaP/GaAs Heterostructures Grown by Gas Source Molecular Beam Epitaxy

Comparative study of InAs quantum dots with different InGaAs capping methods

Improved ozone-tetraethoxysilane oxide reliability for deep submicron inter-metal dielectric applications by deposition of a silane-based oxide underlayer

Capacitance of p-n Junctions: Space-Charge Capacitance

Ultraviolet curing imprint lithography on flexible indium tin oxide substrates

Defects and acoustic properties of LiAlO2

Preparation and properties of PZT–PMN–PMS ceramics by molten salt synthesis

The Conduction-Diffusion Theory of Semiconductor Junctions

Junction Boundary Conditions for Heterojunctions

Switch-On Transients in p-n Junctions

An analysis of the frequency dependence of the capacitance of abrupt P− N junction semiconductor devices

Abrupt vs Diffused Semiconductor Junctions

Possible Experimental Consequences of Triangle Singularities in Strange-Particle Production Processes

The capacitance of p- n junctions

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