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A SiC Trench Schottky Diode With Accelerated Hole Extraction and Recombination Structure for Enhancing Single-Event Burnout Tolerance

IEEE transactions on device and materials reliability, 2024-09, p.1-1

2024

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Interfacial Charge Analysis of Heterogeneous Gate Dielectric-Gate All Around-Tunnel FET for Improved Device Reliability

IEEE transactions on device and materials reliability, 2016-06, Vol.16 (2), p.227-234

2016

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Device Screening Strategy for Balancing Short-Circuit Behavior of Paralleling Silicon Carbide MOSFETs

IEEE transactions on device and materials reliability, 2019-12, Vol.19 (4), p.757-765

2019

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Feasibility of Room-Temperature GHz-THz Direct Detection in Graphene Through Hot-Carrier Effect

IEEE transactions on device and materials reliability, 2018-09, Vol.18 (3), p.429-437

2018

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Understanding the Difference in Soft-Error Sensitivity of Back-Biased Thin-BOX SOI SRAMs to Space and Terrestrial Radiation

IEEE transactions on device and materials reliability, 2019-12, Vol.19 (4), p.751-756

2019

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Synergistic Effect of Ionization and Displacement Defects in NPN Transistors Induced by 40-MeV Si Ion Irradiation With Low Fluence

IEEE transactions on device and materials reliability, 2015-12, Vol.15 (4), p.511-518

2015

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Recovery of Electrical Characteristics of Au/n-Si Schottky Junction Under 60}\hbox{Co}$ Gamma Irradiation

IEEE transactions on device and materials reliability, 2014-06, Vol.14 (2), p.721-725

2014

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Optical solution addresses interconnect bottleneck on silicon chips

Photonics spectra (Pittsfield, Mass. 1982), 2018-03, p.30

2018

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Separation of Interface Traps and Oxide Charge in Ionization Damaged Silicon Bipolar Transistors Based on Experimental Observation

IEEE transactions on device and materials reliability, 2015-06, Vol.15 (2), p.258-260

2015

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Superconducting Electronics: A New Frontier for Failure Analysis and Reliability

Electronic device failure analysis, 2019-05, Vol.21 (2), p.54-55

Missert, Nancy

2019

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Transient Overshoot Voltages During VF-TLP Pulses for Bipolar Devices in the Presence of Lowly Doped Regions

IEEE transactions on device and materials reliability, 2020-12, Vol.20 (4), p.650-657

2020

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Road-Network Aware Trajectory Clustering: Integrating Locality, Flow, and Density

IEEE transactions on mobile computing, 2015-02, Vol.14 (2), p.416-429

2015

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Sensitivity to Laser Fault Injection: CMOS FD-SOI vs. CMOS Bulk

IEEE transactions on device and materials reliability, 2019-03, Vol.19 (1), p.6-15

2019

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Investigation of Linearity in the High Electric Field Region for SiGe HBTs Based on Volterra Series

IEEE transactions on device and materials reliability, 2014-12, Vol.14 (4), p.1049-1055

2014

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Breakdown Analysis of Magnetic Flip-Flop With 28-nm UTBB FDSOI Technology

IEEE transactions on device and materials reliability, 2016-09, Vol.16 (3), p.376-383

2016

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Robust Trench Buried-Guard-Ring-Based Termination for Charge Balanced Devices

IEEE transactions on device and materials reliability, 2016-03, Vol.16 (1), p.69-73

2016

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Perovskites: The hottest material in solar cells

Laser focus world, 2021-12, Vol.57 (12), p.43

Hecht, Jeff

2021

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Resistance-Based Modeling for Soft Errors in SOI SRAMs Caused by Radiation-Induced Potential Perturbation Under the BOX

IEEE transactions on device and materials reliability, 2018-12, Vol.18 (4), p.574-582

2018

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Silicon Germanium Spins Cellular and Space Communication Networks

IEEE microwave magazine, 2024-10, Vol.25 (10), p.54-67

2024

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The Current Status and the Future Prospects of Surface Passivation in 4H-SiC Transistors

IEEE transactions on device and materials reliability, 2016-09, Vol.16 (3), p.419-428

2016

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Power devices are in the chips: New power integrated circuits, called PICs, put both power-handling semiconductors and logic on the same IC chip; soon they may be part of every household appliance

IEEE spectrum, 1985-07, Vol.22 (7), p.42-51

Rumennik, Vladimir

1985

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Power semiconductors: Looking ahead: Consumer applications will grow for moderate-current devices while large-diameter wafers await packaging innovations

IEEE spectrum, 1977-08, Vol.14 (8), p.40-46

Harnden, John D.

1977

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Monolithic integrated circuits

IEEE spectrum, 1964-06, Vol.1 (6), p.83-101

Phillips, A. B.

1964

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Imaging and dopant profiling of silicon carbide devices by secondary electron dopant contrast

IEEE transactions on device and materials reliability, 2006-06, Vol.6 (2), p.203-212

2006

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Carbon Ion Irradiation Damage Effects on Electrical Characteristics of Silicon PNP Power BJTs

IEEE transactions on device and materials reliability, 2015-03, Vol.15 (1), p.101-108

2015

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A SiC Trench Schottky Diode With Accelerated Hole Extraction and Recombination Structure for Enhancing Single-Event Burnout Tolerance

Interfacial Charge Analysis of Heterogeneous Gate Dielectric-Gate All Around-Tunnel FET for Improved Device Reliability

Device Screening Strategy for Balancing Short-Circuit Behavior of Paralleling Silicon Carbide MOSFETs

Feasibility of Room-Temperature GHz-THz Direct Detection in Graphene Through Hot-Carrier Effect

Understanding the Difference in Soft-Error Sensitivity of Back-Biased Thin-BOX SOI SRAMs to Space and Terrestrial Radiation

Synergistic Effect of Ionization and Displacement Defects in NPN Transistors Induced by 40-MeV Si Ion Irradiation With Low Fluence

Recovery of Electrical Characteristics of Au/n-Si Schottky Junction Under 60}\hbox{Co}$ Gamma Irradiation

Optical solution addresses interconnect bottleneck on silicon chips

Separation of Interface Traps and Oxide Charge in Ionization Damaged Silicon Bipolar Transistors Based on Experimental Observation

Superconducting Electronics: A New Frontier for Failure Analysis and Reliability

Transient Overshoot Voltages During VF-TLP Pulses for Bipolar Devices in the Presence of Lowly Doped Regions

Road-Network Aware Trajectory Clustering: Integrating Locality, Flow, and Density

Sensitivity to Laser Fault Injection: CMOS FD-SOI vs. CMOS Bulk

Investigation of Linearity in the High Electric Field Region for SiGe HBTs Based on Volterra Series

Breakdown Analysis of Magnetic Flip-Flop With 28-nm UTBB FDSOI Technology

Robust Trench Buried-Guard-Ring-Based Termination for Charge Balanced Devices

Perovskites: The hottest material in solar cells

Resistance-Based Modeling for Soft Errors in SOI SRAMs Caused by Radiation-Induced Potential Perturbation Under the BOX

Silicon Germanium Spins Cellular and Space Communication Networks

The Current Status and the Future Prospects of Surface Passivation in 4H-SiC Transistors

Power devices are in the chips: New power integrated circuits, called PICs, put both power-handling semiconductors and logic on the same IC chip; soon they may be part of every household appliance

Power semiconductors: Looking ahead: Consumer applications will grow for moderate-current devices while large-diameter wafers await packaging innovations

Monolithic integrated circuits

Imaging and dopant profiling of silicon carbide devices by secondary electron dopant contrast

Carbon Ion Irradiation Damage Effects on Electrical Characteristics of Silicon PNP Power BJTs

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