UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Theoretical Study of the Impact of Stress on the Behavior of Intrinsic Point Defects in Large-Diameter Defect-Free Si Crystals

Solid state phenomena, 2014, Vol.205-206, p.163-168

2014

Volltextzugriff (PDF)

Temperature Dependent Internal Friction Behavior of Single Crystal Germanium Studied by the Impulse Excitation Technique

ECS transactions, 2014, Vol.64 (6), p.195-205

2014

Volltextzugriff (PDF)

Diode Characteristics and Thermal Donor Formation in Germanium-Doped Silicon Substrates

ECS transactions, 2013, Vol.50 (5), p.177-186

2013

Volltextzugriff (PDF)

On the Impact of Heavy Doping on Grown-In Defects in Czochralski-Grown Silicon

ECS transactions, 2011, Vol.34 (1), p.1151-1157

2011

Volltextzugriff (PDF)

Analysis of Auger Recombination Characteristics in High Resistivity Si and Ge

Solid state phenomena, 2011, Vol.178-179, p.427-432

2011

Volltextzugriff (PDF)

Comparative Study of Carrier Lifetime Variations with Doping in Si and Ge

ECS transactions, 2006, Vol.3 (4), p.339-350

2006

Volltextzugriff (PDF)

Brother Silicon, Sister Germanium

ECS transactions, 2006, Vol.3 (4), p.451-468

2006

Volltextzugriff (PDF)

Carrier Lifetime Studies in Diode Structures on Si Substrates with and without Ge Doping

Solid state phenomena, 2011, Vol.178-179, p.347-352

2011

Volltextzugriff (PDF)

Impact of Ge Doping on Si Substrate and Diode Characteristics

MRS proceedings, 2010, Vol.1252

2010

Volltextzugriff (PDF)

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

ECS transactions, 2010, Vol.27 (1), p.1041-1046

2010

Volltextzugriff (PDF)

Ab-initio Simulation of Formation and Diffusion Energies of Intrinsic Point Defects in Ge

ECS transactions, 2009, Vol.16 (10), p.659-667

2009

Volltextzugriff (PDF)

Analytical electron microscopy of Si1-xGex/Si heterostructures and local isolation structures

Materials science and technology, 1995, Vol.11 (4), p.400-406

1995

Volltextzugriff (PDF)

Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formation

Physica. B, Condensed matter, 2009, Vol.404 (23-24), p.4723-4726

2009

Volltextzugriff (PDF)

Generation and annealing behaviour of MeV proton and (252)Cf irradiation induced deep levels in silicon diodes

IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1994, Vol.41 (3), p.479-486

1994

Volltextzugriff (PDF)

Irradiation induced lattice defects in Si1-xGex devices and their effect on device performance

Materials science and technology, 1995, Vol.11 (4), p.429-435

1995

Volltextzugriff (PDF)

Experimental and theoretical study of the thermal solubility of the vacancy in germanium

Physica. B, Condensed matter, 2009, Vol.404 (23-24), p.4529-4532

2009

Volltextzugriff (PDF)

Evaluation of the crystalline quality of β-Ga2O3 films by optical absorption measurements

Physica. B, Condensed matter, 2009, Vol.404 (23-24), p.4854-4857

2009

Volltextzugriff (PDF)

Degradation and Recovery of Si1−xGex Devices by Irradiation

MRS proceedings, 1995, Vol.379

1995

Volltextzugriff (PDF)

Deep level transient spectroscopy of transition metal impurities in germanium

Physica. B, Condensed matter, 2007, Vol.401-02, p.188-191

2007

Volltextzugriff (PDF)

Ab initio calculation of the formation energy of charged vacancies in germanium

Physica. B, Condensed matter, 2007, Vol.401-02, p.205-209

2007

Volltextzugriff (PDF)

Carrier lifetime dependence on doping, metal implants and excitation density in Ge and Si

Physica. B, Condensed matter, 2007, Vol.401-02, p.222-225

2007

Volltextzugriff (PDF)

Simulation of point defect diffusion in germanium

Physica. B, Condensed matter, 2006, Vol.376-77, p.257-261

2006

Volltextzugriff (PDF)

Infrared analysis of the precipitated oxide phase in silicon and germanium

Physica. B, Condensed matter, 2006, Vol.376-77, p.113-116

2006

Volltextzugriff (PDF)

Germanium content dependence of radiation damage in strained Si1-xGex epitaxial devices

IEEE transactions on nuclear science, 1994, Vol.41 (6), p.2437-2442

1994

Volltextzugriff (PDF)

A model for the formation of lattice defects at silicon oxide precipitates in silicon

Physica. B, Condensed matter, 2003, Vol.340-42, p.1056-1060

2003

Volltextzugriff (PDF)

1 – 25 von 43

Suche als RSS-Feed

Aktive Filter

PublikationsformTagungsberichte

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(24)
Mit Volltextzugriff
(26)

Sprache

Englisch
(40)
Russisch
(3)

Erscheinungsjahr

n.n

Menü

Weitere Dienste

Einstellungen

Theoretical Study of the Impact of Stress on the Behavior of Intrinsic Point Defects in Large-Diameter Defect-Free Si Crystals

Temperature Dependent Internal Friction Behavior of Single Crystal Germanium Studied by the Impulse Excitation Technique

Diode Characteristics and Thermal Donor Formation in Germanium-Doped Silicon Substrates

On the Impact of Heavy Doping on Grown-In Defects in Czochralski-Grown Silicon

Analysis of Auger Recombination Characteristics in High Resistivity Si and Ge

Comparative Study of Carrier Lifetime Variations with Doping in Si and Ge

Brother Silicon, Sister Germanium

Carrier Lifetime Studies in Diode Structures on Si Substrates with and without Ge Doping

Impact of Ge Doping on Si Substrate and Diode Characteristics

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Ab-initio Simulation of Formation and Diffusion Energies of Intrinsic Point Defects in Ge

Analytical electron microscopy of Si1-xGex/Si heterostructures and local isolation structures

Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formation

Generation and annealing behaviour of MeV proton and (252)Cf irradiation induced deep levels in silicon diodes

Irradiation induced lattice defects in Si1-xGex devices and their effect on device performance

Experimental and theoretical study of the thermal solubility of the vacancy in germanium

Evaluation of the crystalline quality of β-Ga2O3 films by optical absorption measurements

Degradation and Recovery of Si1−xGex Devices by Irradiation

Deep level transient spectroscopy of transition metal impurities in germanium

Ab initio calculation of the formation energy of charged vacancies in germanium

Carrier lifetime dependence on doping, metal implants and excitation density in Ge and Si

Simulation of point defect diffusion in germanium

Infrared analysis of the precipitated oxide phase in silicon and germanium

Germanium content dependence of radiation damage in strained Si1-xGex epitaxial devices

A model for the formation of lattice defects at silicon oxide precipitates in silicon

Aktive Filter

Suchergebnisse filtern