UB Paderborn / Katalog / Suche / in CDI

Corrugated substrate integrated waveguide distributed amplifier

2012 Asia Pacific Microwave Conference Proceedings, 2012, p.379-381

Eccleston, K. W.

2012

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Multiband power amplifier for multiband wireless applications

2002 3rd International Conference on Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002, 2002, p.1142-1145

Eccleston, K.W.

2002

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IEEE_Xplore

Folded substrate-integrated waveguide out-of-phase power divider

2010 Asia-Pacific Microwave Conference, 2010, p.1260-1263

Eccleston, K W

2010

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IEEE_Xplore

Class-B balanced single-ended dual-fed distributed power amplifier

2002 3rd International Conference on Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002, 2002, p.919-922

2002

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IEEE_Xplore

Four-port microstripline antenna integrated with a distributed amplifier

2005 Asia-Pacific Microwave Conference Proceedings, 2005, Vol.2, p.4 pp.

2005

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IEEE_Xplore

Design and performance of a balanced single-ended dual-fed distributed power amplifier

APMC 2001. 2001 Asia-Pacific Microwave Conference (Cat. No.01TH8577), 2001, Vol.3, p.1187-1190 vol.3

Eccleston, K.W.

2001

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IEEE_Xplore

Nonlinear-dispersive GaAs FET drain-current model for harmonic balance simulation

Proceedings of 1997 Asia-Pacific Microwave Conference, 1997, p.717-720 vol.2

Eccleston, K.W.

1997

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IEEE_Xplore

MBE HEMT-compatible diode lasers

ESSDERC '90: 20th European Solid State Device Research Conference, 1990, p.401-404

1990

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IEEE_Xplore

TITAN-RTA: a 2D integrated equipment and process model for simulation of rapid thermal processing

ESSDERC '90: 20th European Solid State Device Research Conference, 1990, p.61-64

1990

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IEEE_Xplore

Stacked capacitor cell technology for 16M DRAM using double self-aligned contacts

ESSDERC '90: 20th European Solid State Device Research Conference, 1990, p.461-464

1990

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IEEE_Xplore

A fast method of parameter extraction for MOS transistors

ESSDERC '90: 20th European Solid State Device Research Conference, 1990, Vol.1990 (10-13 Sept. 1990), p.137-140

1990

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IEEE_Xplore

Local temperature distribution in Si-MOSFETs studied by micro-raman spectroscopy

ESSDERC '90: 20th European Solid State Device Research Conference, 1990, p.591-594

1990

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IEEE_Xplore

High-speed radiation-hardened ECL circuits on bonded SOI wafers

ESSDERC '90: 20th European Solid State Device Research Conference, 1990, p.377-380

1990

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IEEE_Xplore

Directions for optoelectronic circuits

ESSDERC '90: 20th European Solid State Device Research Conference, 1990, p.607-612

1990

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IEEE_Xplore

Optical characterisation of InGaAs/InP and InGaAs/InGaAsP MQW structures for optoelectronic applications

ESSDERC '90: 20th European Solid State Device Research Conference, 1990, p.405-408

1990

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IEEE_Xplore

Modelling and simulation of silicon-on-sapphire MOSFETs for analogue circuit design

ESSDERC '90: 20th European Solid State Device Research Conference, 1990, p.539-542

1990

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IEEE_Xplore

A flash EEPROM cell scaling including tunnel oxide limitations

ESSDERC '90: 20th European Solid State Device Research Conference, 1990, p.169-172

1990

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IEEE_Xplore

3D Integration of GaAs MESFET and varactor diode for a VCO-MMIC

ESSDERC '90: 20th European Solid State Device Research Conference, 1990, p.229-232

1990

Link zum Volltext
IEEE_Xplore

New short-channel effects on nitrided oxide gate MOSFETs

ESSDERC '90: 20th European Solid State Device Research Conference, 1990, p.149-152

1990

Link zum Volltext
IEEE_Xplore

Formation of (TixW1-x)Si2/(TixW1-x)N contacts by rapid thermal silicidation

ESSDERC '90: 20th European Solid State Device Research Conference, 1990, p.77-80

1990

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IEEE_Xplore

A new stacked capacitor cell for 64 Mbit DRAMs

ESSDERC '90: 20th European Solid State Device Research Conference, 1990, p.457-460

1990

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IEEE_Xplore

Prevention of boron penetration from p+ poly gate by RTN produced thin gate oxide

ESSDERC '90: 20th European Solid State Device Research Conference, 1990, p.73-76

1990

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IEEE_Xplore

The effect of high field stress on the capacitance/voltage characteristics of buried insulators formed by oxygen implantation

1990 IEEE SOS/SOI Technology Conference. Proceedings, 1990, p.160-161

1990

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IEEE_Xplore

A simple model to predict the holding voltage for SOI MOSFETs operating in the latch state

1990 IEEE SOS/SOI Technology Conference. Proceedings, 1990, p.19-20

1990

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IEEE_Xplore

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Einstellungen

Corrugated substrate integrated waveguide distributed amplifier

Multiband power amplifier for multiband wireless applications

Folded substrate-integrated waveguide out-of-phase power divider

Class-B balanced single-ended dual-fed distributed power amplifier

Four-port microstripline antenna integrated with a distributed amplifier

Design and performance of a balanced single-ended dual-fed distributed power amplifier

Nonlinear-dispersive GaAs FET drain-current model for harmonic balance simulation

MBE HEMT-compatible diode lasers

TITAN-RTA: a 2D integrated equipment and process model for simulation of rapid thermal processing

Stacked capacitor cell technology for 16M DRAM using double self-aligned contacts

A fast method of parameter extraction for MOS transistors

Local temperature distribution in Si-MOSFETs studied by micro-raman spectroscopy

High-speed radiation-hardened ECL circuits on bonded SOI wafers

Directions for optoelectronic circuits

Optical characterisation of InGaAs/InP and InGaAs/InGaAsP MQW structures for optoelectronic applications

Modelling and simulation of silicon-on-sapphire MOSFETs for analogue circuit design

A flash EEPROM cell scaling including tunnel oxide limitations

3D Integration of GaAs MESFET and varactor diode for a VCO-MMIC

New short-channel effects on nitrided oxide gate MOSFETs

Formation of (TixW1-x)Si2/(TixW1-x)N contacts by rapid thermal silicidation

A new stacked capacitor cell for 64 Mbit DRAMs

Prevention of boron penetration from p+ poly gate by RTN produced thin gate oxide

The effect of high field stress on the capacitance/voltage characteristics of buried insulators formed by oxygen implantation

A simple model to predict the holding voltage for SOI MOSFETs operating in the latch state

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