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Modification of Schottky barrier properties of Au/n-type Ge Schottky barrier diode using monolayer graphene interlayer

Journal of alloys and compounds, 2014-11, Vol.614, p.323-329

2014

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The Low Temperature Epitaxy of Strained GeSn Layers Using RTCVD System

Electronic Materials Letters, 2018, 14(2), , pp.207-213

2018

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Effect of Rapid Thermal Annealing on the Electrical and Structural Properties of Se Schottky Contacts to n-Type Si

Materials transactions, 2013, Vol.54 (7), p.1067-1072

2013

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Electrical Properties and Current Transport Mechanisms of the Au/n-GaN Schottky Structure with Solution- Processed High-k BaTiO3 Interlayer

Journal of electronic materials, 2014-09, Vol.43 (9), p.3499-3507

2014

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Effects of Electrostatic Discharge Stress on Electrical Properties of Bidirectional TVS Zener Diode with Abrupt Junctions

Materials transactions, 2013-11, Vol.54 (11), p.2125-2130

2013

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Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2015, 15(1), 61, pp.7-15

2015

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Temperature dependence of the photocurrent in Ge1−xSnx layers

Journal of the Korean Physical Society, 2016, 69(2), , pp.207-212

2016

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Characterization of n-Ge/i-Ge/p-Si PIN photo-diode

Materials science in semiconductor processing, 2014-06, Vol.22, p.37-43

2014

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Growth of a Ge layer on 8 in. Si (100) substrates by rapid thermal chemical vapor deposition

Materials science in semiconductor processing, 2014-05, Vol.21, p.58-65

2014

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Selective Chemical Wet Etching of Si0.8Ge0.2/Si Multilayer

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2013, 13(6), 54, pp.668-675

2013

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The low temperature epitaxy of Ge on Si (100) substrate using two different precursors of GeH4 and Ge2H6

Solid-state electronics, 2016-10, Vol.124, p.35-41

2016

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Optoelectronic Characterization of Infrared Photodetector Fabricated on Ge-on-Si Substrate

Journal of nanoscience and nanotechnology, 2015-10, Vol.15 (10), p.7832-7835

2015

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Effect of Sn Composition in Ge1−xSnx Layers Grown by Using Rapid Thermal Chemical Vapor Deposition

Journal of the Korean Physical Society, 2018, 72(9), , pp.1063-1068

2018

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Abnormal Dopant Distribution in POCl3-Diffused N+ Emitter of Textured Silicon Solar Cells

IEEE electron device letters, 2011-03, Vol.32 (3), p.351-353

2011

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Schottky barrier parameters and low frequency noise characteristics of graphene-germanium Schottky barrier diode

Superlattices and microstructures, 2016-03, Vol.91, p.306-312

2016

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A comparative study of IR Ge photodiodes with a Schottky barrier contact and metal-semiconductor-metal structure

Journal of the Korean Physical Society, 2014, 65(12), , pp.2100-2106

2014

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Fabrication of PIN photo-diode from p-Ge/i-Ge/n-Si hetero junction structure

Materials science in semiconductor processing, 2014-01, Vol.17, p.74-80

2014

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Characterization of n-type Ge layers on Si (100) substrates grown by rapid thermal chemical vapor deposition

Materials science in semiconductor processing, 2013-12, Vol.16 (6), p.1405-1409

2013

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Abnormal Dopant Distribution in \hbox -Diffused \hbox^ Emitter of Textured Silicon Solar Cells

IEEE electron device letters, 2011-03, Vol.32 (3), p.351-353

2011

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Electroluminescence of n-Ge/i-Ge/p-Si heterojunction PIN LEDs

Journal of the Korean Physical Society, 2014, 64(10), , pp.1430-1436

2014

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Optical properties of hybrid Si1−xGex/Si quantum dot/quantum well structures grown on Si by RPCVD

Materials science in semiconductor processing, 2014-01, Vol.17, p.178-183

2014

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Electroluminescence of p-Ge/i-Ge/n-Si heterojunction PIN LEDs

Journal of the Korean Physical Society, 2014, 64(1), , pp.98-103

2014

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Effect of phosphorus doping concentration on n-type Ge layer growth

Journal of the Korean Physical Society, 2014, 64(5), , pp.715-721

2014

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Correlation of reverse leakage current conduction mechanism and electrostatic discharge robustness of transient voltage suppression diode

Electronic Materials Letters, 2014, 10(5), , pp.893-898

2014

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Doping-concentration dependence of a boron-doped p-type Ge layer grown on a Si (100) substrates by using RTCVD

Journal of the Korean Physical Society, 2014, 64(3), , pp.443-450

2014

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Modification of Schottky barrier properties of Au/n-type Ge Schottky barrier diode using monolayer graphene interlayer

The Low Temperature Epitaxy of Strained GeSn Layers Using RTCVD System

Effect of Rapid Thermal Annealing on the Electrical and Structural Properties of Se Schottky Contacts to n-Type Si

Electrical Properties and Current Transport Mechanisms of the Au/n-GaN Schottky Structure with Solution- Processed High-k BaTiO3 Interlayer

Effects of Electrostatic Discharge Stress on Electrical Properties of Bidirectional TVS Zener Diode with Abrupt Junctions

Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode

Temperature dependence of the photocurrent in Ge1−xSnx layers

Characterization of n-Ge/i-Ge/p-Si PIN photo-diode

Growth of a Ge layer on 8 in. Si (100) substrates by rapid thermal chemical vapor deposition

Selective Chemical Wet Etching of Si0.8Ge0.2/Si Multilayer

The low temperature epitaxy of Ge on Si (100) substrate using two different precursors of GeH4 and Ge2H6

Optoelectronic Characterization of Infrared Photodetector Fabricated on Ge-on-Si Substrate

Effect of Sn Composition in Ge1−xSnx Layers Grown by Using Rapid Thermal Chemical Vapor Deposition

Abnormal Dopant Distribution in POCl3-Diffused N+ Emitter of Textured Silicon Solar Cells

Schottky barrier parameters and low frequency noise characteristics of graphene-germanium Schottky barrier diode

A comparative study of IR Ge photodiodes with a Schottky barrier contact and metal-semiconductor-metal structure

Fabrication of PIN photo-diode from p-Ge/i-Ge/n-Si hetero junction structure

Characterization of n-type Ge layers on Si (100) substrates grown by rapid thermal chemical vapor deposition

Abnormal Dopant Distribution in \hbox -Diffused \hbox^ Emitter of Textured Silicon Solar Cells

Electroluminescence of n-Ge/i-Ge/p-Si heterojunction PIN LEDs

Optical properties of hybrid Si1−xGex/Si quantum dot/quantum well structures grown on Si by RPCVD

Electroluminescence of p-Ge/i-Ge/n-Si heterojunction PIN LEDs

Effect of phosphorus doping concentration on n-type Ge layer growth

Correlation of reverse leakage current conduction mechanism and electrostatic discharge robustness of transient voltage suppression diode

Doping-concentration dependence of a boron-doped p-type Ge layer grown on a Si (100) substrates by using RTCVD

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