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HVPE of scandium nitride on 6H–SiC(0 0 0 1)

Journal of crystal growth, 2008-03, Vol.310 (6), p.1075-1080

2008

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Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN

Applied physics letters, 2005-01, Vol.86 (3), p.031915-031915-3

2005

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Comparison of the DC and Microwave Performance of AlGaN/GaN HEMTs Grown on SiC by MOCVD With Fe-Doped or Unintentionally Doped GaN Buffer Layers

IEEE transactions on electron devices, 2006-09, Vol.53 (9), p.2413-2417

2006

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GaN growth on single-crystal diamond substrates by metalorganic chemical vapour deposition and hydride vapour deposition

Thin solid films, 2003-10, Vol.443 (1), p.9-13

2003

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n-type doping of wurtzite GaN with germanium grown with plasma-assisted molecular beam epitaxy

Journal of crystal growth, 2004-06, Vol.267 (1), p.123-128

2004

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Thick GaN layers grown by HVPE: Influence of the templates

Journal of crystal growth, 2008-08, Vol.310 (17), p.3957-3963

2008

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Interface state density of free-standing GaN Schottky diodes

Semiconductor science and technology, 2010-09, Vol.25 (9), p.095008-095008

2010

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The effect of HVPE reactor geometry on GaN growth rate—experiments versus simulations

Journal of crystal growth, 2004-10, Vol.271 (1-2), p.192-199

2004

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Growth of GaN on nano-crystalline diamond substrates

Diamond and related materials, 2009-05, Vol.18 (5), p.1043-1047

2009

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Properties and preparation of high quality, free-standing GaN substrates and study of spontaneous separation mechanism

Journal of crystal growth, 2010-08, Vol.312 (16), p.2398-2403

2010

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Method for HVPE growth of thick crack-free GaN layers

Journal of crystal growth, 2006-05, Vol.290 (2), p.473-478

2006

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Microphotoluminescence mapping of laterally overgrown GaN layers on patterned Si (111) substrates

Applied physics letters, 2005-09, Vol.87 (13)

2005

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Reduction of dislocation density in epitaxial GaN layers by overgrowth of defect-related etch pits

Applied physics letters, 2009-07, Vol.95 (3), p.31913

2009

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Defect formation in GaN grown on vicinal 4H-SiC (0001) substrates

Physica status solidi. A, Applications and materials science, 2007-12, Vol.204 (12), p.4230-4240

2007

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Influence of the nucleation layer morphology and epilayer structure on the resistivity of GaN films grown on c-plane sapphire by MOCVD

Journal of crystal growth, 2005-01, Vol.273 (3), p.424-430

2005

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Influence of sapphire annealing in trimethylgallium atmosphere on GaN epitaxy by MOCVD

Journal of crystal growth, 2005-09, Vol.283 (1-2), p.72-80

2005

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ScAlN nanowires: A cathodoluminescence study

Journal of crystal growth, 2009-05, Vol.311 (11), p.3147-3151

2009

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Influence of In on the surface morphology of HVPE grown GaN

Journal of crystal growth, 2007-09, Vol.307 (1), p.19-25

2007

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Thick GaN layers grown by hydride vapor-phase epitaxy: hetero- versus homo-epitaxy

Journal of crystal growth, 2003-08, Vol.255 (3), p.241-249

2003

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Scaling up a horizontal HVPE reactor

Surface & coatings technology, 2007-09, Vol.201 (22), p.8878-8883

2007

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Carrier gas and position effects on GaN growth in a horizontal HVPE reactor: An experimental and numerical study

Journal of crystal growth, 2005-11, Vol.285 (1), p.31-40

2005

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Luminescence decay in highly excited GaN grown by hydride vapor-phase epitaxy

Applied physics letters, 2003-07, Vol.83 (1), p.66-68

2003

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The direct influence of polarity on structural and electro-optical properties of heteroepitaxial GaN

Journal of physics. Condensed matter, 2002-12, Vol.14 (48), p.13345-13350

2002

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Damage after annealing and aging at room temperature of platinized silicon substrates

Thin solid films, 2003-06, Vol.434 (1), p.283-295

2003

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Selective photoetching and transmission electron microscopy studies of defects in heteroepitaxial GaN

Journal of applied physics, 2001-12, Vol.90 (12), p.6105-6109

2001

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HVPE of scandium nitride on 6H–SiC(0 0 0 1)

Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN

Comparison of the DC and Microwave Performance of AlGaN/GaN HEMTs Grown on SiC by MOCVD With Fe-Doped or Unintentionally Doped GaN Buffer Layers

GaN growth on single-crystal diamond substrates by metalorganic chemical vapour deposition and hydride vapour deposition

n-type doping of wurtzite GaN with germanium grown with plasma-assisted molecular beam epitaxy

Thick GaN layers grown by HVPE: Influence of the templates

Interface state density of free-standing GaN Schottky diodes

The effect of HVPE reactor geometry on GaN growth rate—experiments versus simulations

Growth of GaN on nano-crystalline diamond substrates

Properties and preparation of high quality, free-standing GaN substrates and study of spontaneous separation mechanism

Method for HVPE growth of thick crack-free GaN layers

Microphotoluminescence mapping of laterally overgrown GaN layers on patterned Si (111) substrates

Reduction of dislocation density in epitaxial GaN layers by overgrowth of defect-related etch pits

Defect formation in GaN grown on vicinal 4H-SiC (0001) substrates

Influence of the nucleation layer morphology and epilayer structure on the resistivity of GaN films grown on c-plane sapphire by MOCVD

Influence of sapphire annealing in trimethylgallium atmosphere on GaN epitaxy by MOCVD

ScAlN nanowires: A cathodoluminescence study

Influence of In on the surface morphology of HVPE grown GaN

Thick GaN layers grown by hydride vapor-phase epitaxy: hetero- versus homo-epitaxy

Scaling up a horizontal HVPE reactor

Carrier gas and position effects on GaN growth in a horizontal HVPE reactor: An experimental and numerical study

Luminescence decay in highly excited GaN grown by hydride vapor-phase epitaxy

The direct influence of polarity on structural and electro-optical properties of heteroepitaxial GaN

Damage after annealing and aging at room temperature of platinized silicon substrates

Selective photoetching and transmission electron microscopy studies of defects in heteroepitaxial GaN

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