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Epitaxial challenges of GaN on silicon

MRS bulletin, 2015-05, Vol.40 (5), p.412-417

Semond, F.

2015

Volltextzugriff (PDF)

Low-loss GaN-on-insulator platform for integrated photonics

Optics express, 2022-06, Vol.30 (12), p.20737-20749

2022

Volltextzugriff (PDF)

Deep-UV nitride-on-silicon microdisk lasers

Scientific reports, 2016-02, Vol.6 (1), p.21650-21650, Article 21650

2016

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III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet

Applied physics letters, 2016-12, Vol.109 (23)

2016

Volltextzugriff (PDF)

Polariton lasing in a hybrid bulk ZnO microcavity

Applied physics letters, 2011-10, Vol.99 (16), p.161104-161104-3

2011

Volltextzugriff (PDF)

Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon

Applied physics letters, 2014-07, Vol.105 (1)

2014

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LO-phonon-assisted polariton lasing in a ZnO-based microcavity

Physical review. B, Condensed matter and materials physics, 2012-03, Vol.85 (12), Article 121201

2012

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Patterned silicon substrates: A common platform for room temperature GaN and ZnO polariton lasers

Applied physics letters, 2014-06, Vol.104 (24)

2014

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AlN buffer layer growth for GaN epitaxy on (111) Si: Al or N first?

Journal of crystal growth, 2009-06, Vol.311 (12), p.3278-3284

2009

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Resonant second harmonic generation in a gallium nitride two-dimensional photonic crystal on silicon

Applied physics letters, 2015-02, Vol.106 (8)

2015

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Temperature quenching of photoluminescence intensities in undoped and doped GaN

Journal of applied physics, 1999-10, Vol.86 (7), p.3721-3728

1999

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From spiral growth to kinetic roughening in molecular-beam epitaxy of GaN(0001)

Physical review. B, Condensed matter and materials physics, 2004-03, Vol.69 (12), Article 125329

2004

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Imaging and counting threading dislocations in c-oriented epitaxial GaN layers

Semiconductor science and technology, 2013-03, Vol.28 (3), p.35006

2013

Volltextzugriff (PDF)

From visible to white light emission by GaN quantum dots on Si(111) substrate

Applied physics letters, 1999-08, Vol.75 (7), p.962-964

1999

Volltextzugriff (PDF)

Polarized emission from GaN/AlN quantum dots: Single-dot spectroscopy and symmetry-based theory

Physical review. B, Condensed matter and materials physics, 2008-06, Vol.77 (23), Article 235315

2008

Volltextzugriff (PDF)

Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy

Applied physics letters, 2008-11, Vol.93 (20), p.202108-202108-3

2008

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High-electron-mobility AlGaN/GaN heterostructures grown on Si(111) by molecular-beam epitaxy

Applied physics letters, 2001-01, Vol.78 (3), p.335-337

2001

Volltextzugriff (PDF)

High quality factor AlN nanocavities embedded in a photonic crystal waveguide

Applied physics letters, 2012-05, Vol.100 (19), p.191104-191104-3

2012

Volltextzugriff (PDF)

AlN photonic crystal nanocavities realized by epitaxial conformal growth on nanopatterned silicon substrate

Applied physics letters, 2011-06, Vol.98 (26), p.261106-261106-3

2011

Volltextzugriff (PDF)

Polariton condensation phase diagram in wide-band-gap planar microcavities: GaN versus ZnO

Physical review. B, 2016-03, Vol.93 (11), Article 115205

2016

Volltextzugriff (PDF)

Determination of the refractive indices of AlN, GaN, and AlxGa1−xN grown on (111)Si substrates

Journal of applied physics, 2003-05, Vol.93 (9), p.5222-5226

2003

Volltextzugriff (PDF)

Low loss GaN waveguides for visible light on Si substrates

Journal of the European Optical Society. Rapid publications, 2014-01, Vol.9, p.14050, Article 14050

2014

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Anisotropic electron spin relaxation in bulk GaN

Applied physics letters, 2009-11, Vol.95 (19), p.192107-192107-3

2009

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Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks

Journal of applied physics, 2003-11, Vol.94 (10), p.6499-6507

2003

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Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy

Journal of crystal growth, 2010-09, Vol.312 (19), p.2683-2688

2010

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Epitaxial challenges of GaN on silicon

Low-loss GaN-on-insulator platform for integrated photonics

Deep-UV nitride-on-silicon microdisk lasers

III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet

Polariton lasing in a hybrid bulk ZnO microcavity

Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon

LO-phonon-assisted polariton lasing in a ZnO-based microcavity

Patterned silicon substrates: A common platform for room temperature GaN and ZnO polariton lasers

AlN buffer layer growth for GaN epitaxy on (111) Si: Al or N first?

Resonant second harmonic generation in a gallium nitride two-dimensional photonic crystal on silicon

Temperature quenching of photoluminescence intensities in undoped and doped GaN

From spiral growth to kinetic roughening in molecular-beam epitaxy of GaN(0001)

Imaging and counting threading dislocations in c-oriented epitaxial GaN layers

From visible to white light emission by GaN quantum dots on Si(111) substrate

Polarized emission from GaN/AlN quantum dots: Single-dot spectroscopy and symmetry-based theory

Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy

High-electron-mobility AlGaN/GaN heterostructures grown on Si(111) by molecular-beam epitaxy

High quality factor AlN nanocavities embedded in a photonic crystal waveguide

AlN photonic crystal nanocavities realized by epitaxial conformal growth on nanopatterned silicon substrate

Polariton condensation phase diagram in wide-band-gap planar microcavities: GaN versus ZnO

Determination of the refractive indices of AlN, GaN, and AlxGa1−xN grown on (111)Si substrates

Low loss GaN waveguides for visible light on Si substrates

Anisotropic electron spin relaxation in bulk GaN

Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks

Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy

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