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Complex biology of constitutional ring chromosomes structure and (in)stability revealed by somatic cell reprogramming

Scientific reports, 2021-02, Vol.11 (1), p.4325-4325, Article 4325

2021

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Noradrenaline enhances angiotensin II responses via p38 MAPK activation after hypoxia/re-oxygenation in renal interlobar arteries

Acta Physiologica, 2015-04, Vol.213 (4), p.920-932

2015

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Histone H1 Depletion in Mammals Alters Global Chromatin Structure but Causes Specific Changes in Gene Regulation

Cell, 2005-12, Vol.123 (7), p.1199-1212

2005

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Closed Chromatin Loops at the Ends of Chromosomes

The Journal of cell biology, 2004-07, Vol.166 (2), p.161-165

2004

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Automized procedures for the determination of ozone and ammonia contents in air by using the chromatomembrane method for gas-liquid extraction

Fresenius' journal of analytical chemistry, 2000-02, Vol.366 (4), p.332-335

2000

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Determination of small quantities of nitrogen oxides in air by ion chromatography using a chromatomembrane cell for preconcentration

Fresenius' journal of analytical chemistry, 1998-06, Vol.361 (3), p.324-325

1998

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Whole-Wafer Mapping of Dislocations in 4H-SiC Epitaxy

Materials science forum, 2007-01, Vol.556-557, p.295-298, Article 295

2007

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Initial Stages of the Graphite-SiC(0001) Interface Formation Studied by Photoelectron Spectroscopy

Materials science forum, 2007-01, Vol.556-557, p.525-528

2007

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Increased Channel Mobility in 4H-SiC UMOSFETs Using On-Axis Substrates

Materials science forum, 2007-01, Vol.556-557, p.807-810

2007

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Electronic Structure of Graphite/6H-SiC Interfaces

Materials science forum, 2007-01, Vol.556-557, p.701-704

2007

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Damage-Free Planarization of 4H-SiC (0001) by Catalyst-Referred Etching

Materials science forum, 2007-01, Vol.556-557, p.749-751

2007

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Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process

Materials science forum, 2007-01, Vol.556-557, p.271-274

2007

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Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum

Materials science forum, 2007-01, Vol.556-557, p.555-560

2007

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Potential Benefits of Silicon Carbide Zener Diodes Used as Components of Intrinsically Safe Barriers

Materials science forum, 2007-01, Vol.556-557, p.937-940

2007

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Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices

Materials science forum, 2007-01, Vol.556-557, p.77-80

2007

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Investigation of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Diodes

Materials science forum, 2007-01, Vol.556-557, p.375-378

2007

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Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)

Materials science forum, 2007-01, Vol.556-557, p.881-884

2007

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Optimizing the Thermally Oxidized 4H-SiC MOS Interface for P-Channel Devices

Materials science forum, 2007-01, Vol.556-557, p.667-670

2007

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Distinction of the Nuclei of Shockley Faults in 4H-SiC{0001} pin Diodes by Electroluminescence Imaging

Materials science forum, 2007-09, Vol.556-557, p.251-254

2007

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Improvement of Electrical Characteristics of Ion Implanted 4H-SiC MESFET on a Semi-Insulating Substrate

Materials science forum, 2007-01, Vol.556-557, p.803-806

2007

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Impurity Conduction in Silicon Carbide

Materials science forum, 2007-01, Vol.556-557, p.367-370

2007

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An Approach to Model Temperature Effects of Interface Traps in 4H-SiC

Materials science forum, 2007-01, Vol.556-557, p.497-500

2007

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Deep Levels in Electron-Irradiated n- and p-type 4H-SiC Investigated by Deep Level Transient Spectroscopy

Materials science forum, 2007-01, Vol.556-557, p.331-334

2007

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Impact of Acceptor Concentration on Electronic Properties of n+-GaN/p+-SiC Heterojunction for GaN/SiC Heterojunction Bipolar Transistor

Materials science forum, 2007-01, Vol.556-557, p.1039-1042

2007

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Dependence of DAP Emission Properties on Impurity Concentrations in N-/B-co-doped 6H-SiC

Materials science forum, 2007-01, Vol.556-557, p.335-338, Article 335

2007

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Complex biology of constitutional ring chromosomes structure and (in)stability revealed by somatic cell reprogramming

Noradrenaline enhances angiotensin II responses via p38 MAPK activation after hypoxia/re-oxygenation in renal interlobar arteries

Histone H1 Depletion in Mammals Alters Global Chromatin Structure but Causes Specific Changes in Gene Regulation

Closed Chromatin Loops at the Ends of Chromosomes

Automized procedures for the determination of ozone and ammonia contents in air by using the chromatomembrane method for gas-liquid extraction

Determination of small quantities of nitrogen oxides in air by ion chromatography using a chromatomembrane cell for preconcentration

Whole-Wafer Mapping of Dislocations in 4H-SiC Epitaxy

Initial Stages of the Graphite-SiC(0001) Interface Formation Studied by Photoelectron Spectroscopy

Increased Channel Mobility in 4H-SiC UMOSFETs Using On-Axis Substrates

Electronic Structure of Graphite/6H-SiC Interfaces

Damage-Free Planarization of 4H-SiC (0001) by Catalyst-Referred Etching

Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process

Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum

Potential Benefits of Silicon Carbide Zener Diodes Used as Components of Intrinsically Safe Barriers

Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices

Investigation of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Diodes

Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)

Optimizing the Thermally Oxidized 4H-SiC MOS Interface for P-Channel Devices

Distinction of the Nuclei of Shockley Faults in 4H-SiC{0001} pin Diodes by Electroluminescence Imaging

Improvement of Electrical Characteristics of Ion Implanted 4H-SiC MESFET on a Semi-Insulating Substrate

Impurity Conduction in Silicon Carbide

An Approach to Model Temperature Effects of Interface Traps in 4H-SiC

Deep Levels in Electron-Irradiated n- and p-type 4H-SiC Investigated by Deep Level Transient Spectroscopy

Impact of Acceptor Concentration on Electronic Properties of n+-GaN/p+-SiC Heterojunction for GaN/SiC Heterojunction Bipolar Transistor

Dependence of DAP Emission Properties on Impurity Concentrations in N-/B-co-doped 6H-SiC

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