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Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node
IEEE transactions on nuclear science, 2013-08, Vol.60 (4), p.2583-2589
2013
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On the Variability in Planar FDSOI Technology: From MOSFETs to SRAM Cells
IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2326-2336
2011
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Strain-Induced Performance Enhancement of Trigate and Omega-Gate Nanowire FETs Scaled Down to 10-nm Width
IEEE transactions on electron devices, 2013-02, Vol.60 (2), p.727-732
2013
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Carrier-Mobility Enhancement via Strain Engineering in Future Thin-Body MOSFETs
IEEE electron device letters, 2012-03, Vol.33 (3), p.318-320
2012
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Capped carbon hard mask and trimming process: A low-cost and efficient route to nanoscale devices
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-03, Vol.31 (2)
2013
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Enhanced thermal performances of silicon-on-diamond wafers incorporating ultrathin nanocrystalline diamond and silicon layers: Raman and micro-Raman analysis
Journal of applied physics, 2011-10, Vol.110 (8), p.084901-084901-9
2011
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Transient Radiation Response of Single- and Multiple-Gate FD SOI Transistors
IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2355-2362
2007
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Impact of back biasing on carrier transport in ultra-thin-body and BOX (UTBB) Fully Depleted SOI MOSFETs
2012 Symposium on VLSI Technology (VLSIT), 2012, p.113-114
2012
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Arsenic-Segregated Rare-Earth Silicide Junctions: Reduction of Schottky Barrier and Integration in Metallic n-MOSFETs on SOI
IEEE electron device letters, 2009-12, Vol.30 (12), p.1266-1268
2009
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Evidences on the Physical Origin of the Unexpected Transport Degradation in Ultimate n-FDSOI Devices
IEEE transactions on nanotechnology, 2009-03, Vol.8 (2), p.167-173
2009
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Generation-recombination transient effects in partially depleted SOI transistors: systematic experiments and simulations
IEEE transactions on electron devices, 1998-08, Vol.45 (8), p.1678-1683
1998
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