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Strategy of Solution-Processed All-Inorganic Heterostructure for Humidity/Temperature-Stable Perovskite Quantum Dot Light-Emitting Diodes

ACS nano, 2018-02, Vol.12 (2), p.1462-1472

2018

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Localized Surface Plasmon Enhanced All‐Inorganic Perovskite Quantum Dot Light‐Emitting Diodes Based on Coaxial Core/Shell Heterojunction Architecture

Advanced functional materials, 2018-05, Vol.28 (20), p.n/a

2018

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Synergetic Effect of the Surfactant and Silica Coating on the Enhanced Emission and Stability of Perovskite Quantum Dots for Anticounterfeiting

ACS applied materials & interfaces, 2019-08, Vol.11 (31), p.28013-28022

2019

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Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio

Applied physics letters, 2018-04, Vol.112 (15)

2018

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Improvement of electroluminescence performance by integration of ZnO nanowires and single-crystalline films on ZnO/GaN heterojunction

Applied physics letters, 2014-03, Vol.104 (13)

2014

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Improved ultraviolet emission performance from polarization-engineered n-ZnO/p-GaN heterojunction diode

Applied physics letters, 2016-02, Vol.108 (6)

2016

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Near infrared electroluminescence from p-NiO/n-InN/n-GaN light-emitting diode fabricated by PAMBE

Journal of luminescence, 2017-06, Vol.186, p.243-246

2017

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Growth temperature impact on film quality of hBN grown on Al2O3 using non-catalyzed borazane CVD

Journal of materials science. Materials in electronics, 2017-10, Vol.28 (19), p.14341-14347

2017

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Improvement of slope efficiency of GaN-Based blue laser diodes by using asymmetric MQW and InxGa1-xN lower waveguide

Journal of alloys and compounds, 2018-01, Vol.731, p.243-247

2018

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Shockley-Read-Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes

Journal of physics. D, Applied physics, 2016-03, Vol.49 (14), p.145104-145108

2016

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High-performance ultraviolet-blue light-emitting diodes based on an n-ZnO nanowall networks/p-GaN heterojunction

Applied physics letters, 2013-07, Vol.103 (2), p.21109

2013

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UV-visible broad spectrum light emitting device of ZnO/MgO/ITO structure

Journal of luminescence, 2017-07, Vol.187, p.428-432

2017

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Study on the electroluminescence properties of diodes based on n-ZnO/p-NiO/p-Si heterojunction

Optics communications, 2015-02, Vol.336, p.1-4

2015

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A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium trioxide thin film

Materials science in semiconductor processing, 2015-11, Vol.39, p.582-586

2015

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Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

Applied surface science, 2016-01, Vol.360, p.772-776

2016

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Vertical conducting ultraviolet light-emitting diodes based on p-ZnO:As/n-GaN/n-SiC heterostructure

Applied physics letters, 2013-04, Vol.102 (16)

2013

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Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth

Applied physics. A, Materials science & processing, 2014-09, Vol.116 (4), p.1561-1566

2014

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Negative differential resistance in low Al-composition p-GaN/Mg-doped Al0.15Ga0.85N/n+-GaN hetero-junction grown by metal-organic chemical vapor deposition on sapphire substrate

Applied physics letters, 2014-02, Vol.104 (5)

2014

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Realization of controllable etching for ZnO film by NH4Cl aqueous solution and its influence on optical and electrical properties

Applied surface science, 2007-03, Vol.253 (11), p.5161-5165

2007

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Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate

Scientific reports, 2014-09, Vol.4 (1), p.6322-6322, Article 6322

2014

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Study on the luminescence properties of n-ZnO/p-Si hetero-junction diode grown by MOCVD

Journal of physics. D, Applied physics, 2008-02, Vol.41 (3), p.035101-035101 (5)

2008

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Study on the luminescence properties of n-ZnO/i-NiO/n-GaN isotype heterojunction diodes

Journal of luminescence, 2013-03, Vol.135, p.160-163

2013

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Room temperature electroluminescence from ZnO/Si heterojunction devices grown by metal–organic chemical vapor deposition

Journal of luminescence, 2009, Vol.129 (1), p.86-89

2009

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Properties of ZnO thin films grown on Si substrates by photo-assisted MOCVD

Applied surface science, 2008-01, Vol.254 (7), p.2081-2084

2008

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Influence of annealing atmosphere on ZnO thin films grown by MOCVD

Applied surface science, 2006-12, Vol.253 (4), p.2066-2070

2006

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Strategy of Solution-Processed All-Inorganic Heterostructure for Humidity/Temperature-Stable Perovskite Quantum Dot Light-Emitting Diodes

Localized Surface Plasmon Enhanced All‐Inorganic Perovskite Quantum Dot Light‐Emitting Diodes Based on Coaxial Core/Shell Heterojunction Architecture

Synergetic Effect of the Surfactant and Silica Coating on the Enhanced Emission and Stability of Perovskite Quantum Dots for Anticounterfeiting

Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio

Improvement of electroluminescence performance by integration of ZnO nanowires and single-crystalline films on ZnO/GaN heterojunction

Improved ultraviolet emission performance from polarization-engineered n-ZnO/p-GaN heterojunction diode

Near infrared electroluminescence from p-NiO/n-InN/n-GaN light-emitting diode fabricated by PAMBE

Growth temperature impact on film quality of hBN grown on Al2O3 using non-catalyzed borazane CVD

Improvement of slope efficiency of GaN-Based blue laser diodes by using asymmetric MQW and InxGa1-xN lower waveguide

Shockley-Read-Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes

High-performance ultraviolet-blue light-emitting diodes based on an n-ZnO nanowall networks/p-GaN heterojunction

UV-visible broad spectrum light emitting device of ZnO/MgO/ITO structure

Study on the electroluminescence properties of diodes based on n-ZnO/p-NiO/p-Si heterojunction

A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium trioxide thin film

Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

Vertical conducting ultraviolet light-emitting diodes based on p-ZnO:As/n-GaN/n-SiC heterostructure

Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth

Negative differential resistance in low Al-composition p-GaN/Mg-doped Al0.15Ga0.85N/n+-GaN hetero-junction grown by metal-organic chemical vapor deposition on sapphire substrate

Realization of controllable etching for ZnO film by NH4Cl aqueous solution and its influence on optical and electrical properties

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate

Study on the luminescence properties of n-ZnO/p-Si hetero-junction diode grown by MOCVD

Study on the luminescence properties of n-ZnO/i-NiO/n-GaN isotype heterojunction diodes

Room temperature electroluminescence from ZnO/Si heterojunction devices grown by metal–organic chemical vapor deposition

Properties of ZnO thin films grown on Si substrates by photo-assisted MOCVD

Influence of annealing atmosphere on ZnO thin films grown by MOCVD

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