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Study of recrystallization and activation processes in thin and highly doped silicon-on-insulator layers by nanosecond laser thermal annealing

Journal of applied physics, 2022-02, Vol.131 (6)

2022

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Influence of average size and interface passivation on the spectral emission of Si nanocrystals embedded in SiO2

Journal of applied physics, 2002-01, Vol.91 (2), p.798-807

2002

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The synthesis of single layers of Ag nanocrystals by ultra-low-energy ion implantation for large-scale plasmonic structures

Nanotechnology, 2009-09, Vol.20 (35), p.355305-6

2009

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Controlled fabrication of Si nanocrystal delta-layers in thin SiO2 layers by plasma immersion ion implantation for nonvolatile memories

Applied physics letters, 2013-12, Vol.103 (25)

2013

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Stress measurements of germanium nanocrystals embedded in silicon oxide

Journal of applied physics, 2003-11, Vol.94 (9), p.5639-5642

2003

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Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin SiO2 layers by low energy ion implantation

Journal of applied physics, 2004-05, Vol.95 (10), p.5696-5702

2004

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Ostwald ripening of end-of-range defects in silicon

Journal of applied physics, 1998-03, Vol.83 (6), p.3008-3017

1998

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Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers

Journal of applied physics, 2006-02, Vol.99 (4)

2006

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Elucidation of the surface passivation role on the photoluminescence emission yield of silicon nanocrystals embedded in SiO2

Applied physics letters, 2002-03, Vol.80 (9), p.1637-1639

2002

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Direct modulation of electroluminescence from silicon nanocrystals beyond radiative recombination rates

Applied physics letters, 2008-03, Vol.92 (9), p.091103-091103-3

2008

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Detection and characterization of silicon nanocrystals embedded in thin oxide layers

Journal of applied physics, 2004-01, Vol.95 (1), p.257-262

2004

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White luminescence from Si+ and C+ ion-implanted SiO2 films

Journal of applied physics, 2003-07, Vol.94 (1), p.254-262

2003

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Correlation between structural and optical properties of Si nanocrystals embedded in SiO2: The mechanism of visible light emission

Applied physics letters, 2000-11, Vol.77 (20), p.3143-3145

2000

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Resonant Raman scattering of a single layer of Si nanocrystals on a silicon substrate

Journal of applied physics, 2004-08, Vol.96 (4), p.2403-2405

2004

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Silicon nanocrystal memory devices obtained by ultra-low-energy ion-beam synthesis

Solid-state electronics, 2004-09, Vol.48 (9), p.1511-1517

2004

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Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications

Solid-state electronics, 2005-11, Vol.49 (11), p.1734-1744

2005

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White electroluminescence from C- and Si-rich thin silicon oxides

Applied physics letters, 2006-12, Vol.89 (25), p.253124-253124-3

2006

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MOS memory structures by very-low-energy-implanted Si in thin SiO2

Materials science & engineering. B, Solid-state materials for advanced technology, 2003-08, Vol.101 (1-3), p.14-18

2003

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Influence of the thickness of the tunnel layer on the charging characteristics of Si nanocrystals embedded in an ultra-thin SiO2 layer

Physica. E, Low-dimensional systems & nanostructures, 2007-04, Vol.38 (1-2), p.80-84

2007

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Optical and structural characterization of Si nanocrystals ion beam synthesized in SiO2: correlation between the surface passivation and the photoluminescence emission

Solid-state electronics, 2001-08, Vol.45 (8), p.1495-1504

2001

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Transient enhanced diffusion of boron in presence of end-of-range defects

Journal of applied physics, 1997-09, Vol.82 (6), p.2855-2861

1997

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Ion beam synthesis of GaN precipitates in GaAs

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-05, Vol.93 (1), p.10-14

2002

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Ostwald ripening of Ge precipitates elaborated by ion implantation in SiO2

Materials science & engineering. B, Solid-state materials for advanced technology, 2000-01, Vol.69-70, p.380-385

2000

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Thermal dry oxidation of Si1-x-yGexCy strained layers grown on silicon

Microelectronic engineering, 1999-09, Vol.48 (1-4), p.207-210

1999

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Crystallization behavior of Ge1Cu2Te3 amorphous film

MRS proceedings, 2010, Vol.1251 (1)

2010

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Study of recrystallization and activation processes in thin and highly doped silicon-on-insulator layers by nanosecond laser thermal annealing

Influence of average size and interface passivation on the spectral emission of Si nanocrystals embedded in SiO2

The synthesis of single layers of Ag nanocrystals by ultra-low-energy ion implantation for large-scale plasmonic structures

Controlled fabrication of Si nanocrystal delta-layers in thin SiO2 layers by plasma immersion ion implantation for nonvolatile memories

Stress measurements of germanium nanocrystals embedded in silicon oxide

Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin SiO2 layers by low energy ion implantation

Ostwald ripening of end-of-range defects in silicon

Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers

Elucidation of the surface passivation role on the photoluminescence emission yield of silicon nanocrystals embedded in SiO2

Direct modulation of electroluminescence from silicon nanocrystals beyond radiative recombination rates

Detection and characterization of silicon nanocrystals embedded in thin oxide layers

White luminescence from Si+ and C+ ion-implanted SiO2 films

Correlation between structural and optical properties of Si nanocrystals embedded in SiO2: The mechanism of visible light emission

Resonant Raman scattering of a single layer of Si nanocrystals on a silicon substrate

Silicon nanocrystal memory devices obtained by ultra-low-energy ion-beam synthesis

Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications

White electroluminescence from C- and Si-rich thin silicon oxides

MOS memory structures by very-low-energy-implanted Si in thin SiO2

Influence of the thickness of the tunnel layer on the charging characteristics of Si nanocrystals embedded in an ultra-thin SiO2 layer

Optical and structural characterization of Si nanocrystals ion beam synthesized in SiO2: correlation between the surface passivation and the photoluminescence emission

Transient enhanced diffusion of boron in presence of end-of-range defects

Ion beam synthesis of GaN precipitates in GaAs

Ostwald ripening of Ge precipitates elaborated by ion implantation in SiO2

Thermal dry oxidation of Si1-x-yGexCy strained layers grown on silicon

Crystallization behavior of Ge1Cu2Te3 amorphous film

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