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Inkjet printing of single-walled carbon nanotubes and electrical characterization of the line pattern

Nanotechnology, 2008-03, Vol.19 (9), p.095702-095702 (6)

2008

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Thickness dependence of room temperature permittivity of polycrystalline BaTiO3 thin films by radio-frequency magnetron sputtering

Journal of applied physics, 1997-05, Vol.81 (9), p.6322-6327

1997

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Fabrication of multilayered conducting polymer heterostructure by self-assembly technique and its optical and electrical properties

Japanese Journal of Applied Physics, 1996-06, Vol.35 (6A), p.L741-L744

1996

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Unique electrical and optical properties of conducting polymeric liquid crystal

Japanese Journal of Applied Physics, 1993-11, Vol.32 (11B), p.L1673-L1676

1993

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High Stability Resonator for Pulsed Solid State Lasers

Japanese Journal of Applied Physics, 1997, Vol.36 (Part 1, No. 11), p.6761-6763

1997

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Simple modification of positive-branch unstable resonator for diffraction-limited XeCl laser beam

Japanese Journal of Applied Physics, 1995, Vol.34 (9A), p.4799-4802

1995

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Injection locking of a modified-unstable-resonator XeCl laser by using a line-narrowed hemiconfocal oscillator

Japanese Journal of Applied Physics, 1994, Vol.33 (8), p.4617-4621

1994

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Energy transfer from Tm3+ to Er3+ in zirconiumfluoride glasses pumped by a 786 nm laser diode

Japanese journal of applied physics, 1994-11, Vol.33 (11A), p.L1527-L1529

1994

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Origin of (111) twin lamellae in BaTiO3 thin films on platinum substrates

Japanese journal of applied physics, 1997, Vol.36 (11), p.6942-6945

1997

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Ninety degree domains in RF-sputtered BaTiO3 thin films on platinum substrates

Japanese journal of applied physics, 1997, Vol.36 (11), p.6937-6941

1997

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Negative Pattern Generation Technique by Laser Beam Writing for Integrated Optics

Japanese Journal of Applied Physics, 1998, Vol.37 (Part 1, No. 9A), p.4844-4845

1998

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(111) twins in BaTiO3 thin films deposited by RF magnetron sputtering

Japanese journal of applied physics, 1996-06, Vol.35 (6A), p.L699-L702

1996

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Use of polarization-optical time domain reflectometry for observation of the Faraday effect in single-mode fibers

IEEE journal of quantum electronics, 1982-04, Vol.18 (4), p.455-456

1982

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The effect of multi-scale laser textured surface on lubrication regime

Applied surface science, 2013-04, Vol.270, p.58-63

2013

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Combined anti-solvent and cooling method of manufacturing indomethacin–saccharin (IMC–SAC) co-crystal powders

Journal of crystal growth, 2014-12, Vol.408, p.112-118

2014

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Photovoltaic enhancement of organic solar cells by a bridged donor-acceptor block copolymer approach

Applied physics letters, 2007-01, Vol.90 (4)

2007

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The effect of antimony-doping on Ge2Sb2Te5, a phase change material

Thin solid films, 2008-10, Vol.516 (23), p.8810-8812

2008

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Polycrystalline silicon-germanium heating layer for phase-change memory applications

Applied physics letters, 2006-07, Vol.89 (5)

2006

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Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films

Applied surface science, 2007-10, Vol.254 (1), p.316-320

2007

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Aberration Compensation in Near-Field Optics for Multilayer Data Storage

Japanese Journal of Applied Physics, 2009-03, Vol.48 (3S1), p.3

2009

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Electrical Characterization of Nonvolatile Phase-Change Memory Devices Using Sb-Rich Ge–Sb–Te Alloy Films

Japanese Journal of Applied Physics, 2007-11, Vol.46 (11R), p.7225

2007

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Stress relaxation in Si-doped GaN studied by Raman spectroscopy

Journal of applied physics, 1998-06, Vol.83 (11), p.5787-5791

1998

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Three-Modal Size Distribution of Self-assembled InAs Quantum Dots

Japanese Journal of Applied Physics, 2005-04, Vol.44 (4R), p.2037

2005

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Structure and thermal stability of InAs/GaAs quantum dots grown by atomic layer epitaxy and molecular beam epitaxy

Journal of crystal growth, 2005-11, Vol.285 (1), p.137-145

2005

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EFFECTS OF BARRIER LAYERS ON THE ELECTRICAL BEHAVIORS OF PHASE-CHANGE MEMORY DEVICES USING Sb-RICH Ge-Sb-Te FILMS

Integrated ferroelectrics, , Vol.93 (1), p.75-82

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Inkjet printing of single-walled carbon nanotubes and electrical characterization of the line pattern

Thickness dependence of room temperature permittivity of polycrystalline BaTiO3 thin films by radio-frequency magnetron sputtering

Fabrication of multilayered conducting polymer heterostructure by self-assembly technique and its optical and electrical properties

Unique electrical and optical properties of conducting polymeric liquid crystal

High Stability Resonator for Pulsed Solid State Lasers

Simple modification of positive-branch unstable resonator for diffraction-limited XeCl laser beam

Injection locking of a modified-unstable-resonator XeCl laser by using a line-narrowed hemiconfocal oscillator

Energy transfer from Tm3+ to Er3+ in zirconiumfluoride glasses pumped by a 786 nm laser diode

Origin of (111) twin lamellae in BaTiO3 thin films on platinum substrates

Ninety degree domains in RF-sputtered BaTiO3 thin films on platinum substrates

Negative Pattern Generation Technique by Laser Beam Writing for Integrated Optics

(111) twins in BaTiO3 thin films deposited by RF magnetron sputtering

Use of polarization-optical time domain reflectometry for observation of the Faraday effect in single-mode fibers

The effect of multi-scale laser textured surface on lubrication regime

Combined anti-solvent and cooling method of manufacturing indomethacin–saccharin (IMC–SAC) co-crystal powders

Photovoltaic enhancement of organic solar cells by a bridged donor-acceptor block copolymer approach

The effect of antimony-doping on Ge2Sb2Te5, a phase change material

Polycrystalline silicon-germanium heating layer for phase-change memory applications

Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films

Aberration Compensation in Near-Field Optics for Multilayer Data Storage

Electrical Characterization of Nonvolatile Phase-Change Memory Devices Using Sb-Rich Ge–Sb–Te Alloy Films

Stress relaxation in Si-doped GaN studied by Raman spectroscopy

Three-Modal Size Distribution of Self-assembled InAs Quantum Dots

Structure and thermal stability of InAs/GaAs quantum dots grown by atomic layer epitaxy and molecular beam epitaxy

EFFECTS OF BARRIER LAYERS ON THE ELECTRICAL BEHAVIORS OF PHASE-CHANGE MEMORY DEVICES USING Sb-RICH Ge-Sb-Te FILMS

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