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How to train your DragonBot: Socially assistive robots for teaching children about nutrition through play

The 23rd IEEE International Symposium on Robot and Human Interactive Communication, 2014, p.924-929

2014

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III-V field effect transistors for future ultra-low power applications

2012 Symposium on VLSI Technology (VLSIT), 2012, p.45-46

2012

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Advancing 2D Monolayer CMOS Through Contact, Channel and Interface Engineering

2021 IEEE International Electron Devices Meeting (IEDM), 2021, p.7.1.1-7.1.4

2021

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BTI reliability of 45 nm high-K + metal-gate process technology

2008 IEEE International Reliability Physics Symposium, 2008, p.352-357

2008

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Gate-All-Around Strained Si0.4Ge0.6 Nanosheet PMOS on Strain Relaxed Buffer for High Performance Low Power Logic Application

2020 IEEE International Electron Devices Meeting (IEDM), 2020, p.2.2.1-2.2.4

2020

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SEMI-AUTOMATIC CORONARY ARTERY CENTERLINE EXTRACTION IN COMPUTED TOMOGRAPHY ANGIOGRAPHY DATA

2007 4th IEEE International Symposium on Biomedical Imaging: From Nano to Macro, 2007, p.856-859

2007

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An efficient MOS-capacitor based silicon modulator and CMOS drivers for optical transmitters

11th International Conference on Group IV Photonics (GFP), 2014, p.1-2

2014

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Qubit Device Integration Using Advanced Semiconductor Manufacturing Process Technology

2018 IEEE International Electron Devices Meeting (IEDM), 2018, p.6.3.1-6.3.4

2018

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On the Similarity of Electric Field Signatures of Upward and Downward Negative Leaders

2018 34th International Conference on Lightning Protection (ICLP), 2018, p.1-6

2018

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Fabrication, characterization, and physics of III-V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing

2011 International Electron Devices Meeting, 2011, p.33.6.1-33.6.4

2011

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Earth observation-supported service platform for the development and provision of thematic information on the built environment - the TEP-Urban project

2017 Joint Urban Remote Sensing Event (JURSE), 2017, p.1-4

2017

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Experimental observation and physics of "negative" capacitance and steeper than 40mV/decade subthreshold swing in Al0.83In0.17N/AlN/GaN MOS-HEMT on SiC substrate

2013 IEEE International Electron Devices Meeting, 2013, p.28.3.1-28.3.4

2013

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High mobility strained germanium quantum well field effect transistor as the p-channel device option for low power (Vcc = 0.5 V) III-V CMOS architecture

2010 International Electron Devices Meeting, 2010, p.6.7.1-6.7.4

2010

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MOVPE III-V material growth on silicon substrates and its comparison to MBE for future high performance and low power logic applications

2011 International Electron Devices Meeting, 2011, p.35.1.1-35.1.4

2011

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Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic applications

2009 IEEE International Electron Devices Meeting (IEDM), 2009, p.1-4

2009

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A monolithic 50-200 MHz CMOS clock recovery and retiming circuit

1989 Proceedings of the IEEE Custom Integrated Circuits Conference, 1989, p.14.5/1-14.5/4

1989

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How to train your DragonBot: Socially assistive robots for teaching children about nutrition through play

III-V field effect transistors for future ultra-low power applications

Advancing 2D Monolayer CMOS Through Contact, Channel and Interface Engineering

BTI reliability of 45 nm high-K + metal-gate process technology

Gate-All-Around Strained Si0.4Ge0.6 Nanosheet PMOS on Strain Relaxed Buffer for High Performance Low Power Logic Application

SEMI-AUTOMATIC CORONARY ARTERY CENTERLINE EXTRACTION IN COMPUTED TOMOGRAPHY ANGIOGRAPHY DATA

An efficient MOS-capacitor based silicon modulator and CMOS drivers for optical transmitters

Qubit Device Integration Using Advanced Semiconductor Manufacturing Process Technology

On the Similarity of Electric Field Signatures of Upward and Downward Negative Leaders

Fabrication, characterization, and physics of III-V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing

Earth observation-supported service platform for the development and provision of thematic information on the built environment - the TEP-Urban project

Experimental observation and physics of "negative" capacitance and steeper than 40mV/decade subthreshold swing in Al0.83In0.17N/AlN/GaN MOS-HEMT on SiC substrate

High mobility strained germanium quantum well field effect transistor as the p-channel device option for low power (Vcc = 0.5 V) III-V CMOS architecture

MOVPE III-V material growth on silicon substrates and its comparison to MBE for future high performance and low power logic applications

Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic applications

A monolithic 50-200 MHz CMOS clock recovery and retiming circuit

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