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Silicon Millimeter-Wave, Terahertz, and High-Speed Fiber-Optic Device and Benchmark Circuit Scaling Through the 2030 ITRS Horizon

Proceedings of the IEEE, 2017-06, Vol.105 (6), p.1087-1104

2017

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Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening

IEEE electron device letters, 2019-05, Vol.40 (5), p.784-787

2019

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Numerical and Experimental Investigation of TID Radiation Effects on the Breakdown Voltage of 400-V SOI NLDMOSFETs

IEEE transactions on nuclear science, 2019-04, Vol.66 (4), p.710-715

2019

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A Silicon-On-Insulator Lateral IGBT With Segmented Trenches for Improving Short-Circuit Withstanding Capability

IEEE transactions on electron devices, 2022-07, Vol.69 (7), p.4042-4045

2022

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Improvement in U-Shaped Channel SOI Lateral IGBT for Wider Reverse Bias Safe Operating Area

IEEE transactions on electron devices, 2023-03, Vol.70 (3), p.1-5

2023

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Influence of Termination Isolation Deep-Oxide Trenches on Short-Circuit Capability in Silicon-On-Insulator Lateral IGBT

IEEE transactions on electron devices, 2022-10, Vol.69 (10), p.5944-5947

2022

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An Efficient Breakdown Characterization for D/T-RESURF SOI LDMOS Using Important Structure Parameters Selection Technique

IEEE transactions on electron devices, 2024-05, Vol.71 (5), p.2869-2875

2024

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Design insights into RF/analog and linearity/distortion of spacer engineered multi‐fin SOI FET for terahertz applications

International journal of RF and microwave computer-aided engineering, 2021-12, Vol.31 (12), p.n/a

2021

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High-sensitivity and wide-range refractive index sensing based on the envelope spectrum of the subwavelength grating waveguide racetrack microring resonator

Optics letters, 2024-10, Vol.49 (19), p.5603

2024

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Novel SOI LDMOS Without RESURF Effect by Flexible Substrate for Flexible Electronic Systems

IEEE transactions on electron devices, 2021-08, Vol.68 (8), p.4150-4155

2021

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Giving an Account of Oneself

Butler, Judith

1, 2005

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A 200-GHz Power Amplifier With 18.7-dBm P sat in 45-nm CMOS SOI: A Model-Based Large-Signal Approach on Cascaded Series-Connected Power Amplification

IEEE journal of solid-state circuits, 2024-06, Vol.59 (6), p.1631-1642

2024

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Society and the Adolescent Self-Image

Rosenberg, Morris

1, 2015

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Design of E- and W-Band Low-Noise Amplifiers in 22-nm CMOS FD-SOI

IEEE transactions on microwave theory and techniques, 2020-01, Vol.68 (1), p.132-143

2020

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TID Effect of MOSFETs in SOI BCD Process and its Hardening Technique

IEEE transactions on nuclear science, 2023-08, Vol.70 (8), p.1-1

2023

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Total-Ionizing-Dose Radiation-Induced Dual-Channel Leakage Current at Unclosed Edge Termination for High Voltage SOI LDMOS

IEEE transactions on electron devices, 2021-06, Vol.68 (6), p.2861-2866

2021

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A 1.7-dB Minimum NF, 22-32-GHz Low-Noise Feedback Amplifier With Multistage Noise Matching in 22-nm FD-SOI CMOS

IEEE journal of solid-state circuits, 2020-05, Vol.55 (5), p.1239-1248

2020

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28 GHz Doherty Power Amplifier in CMOS SOI With 28% Back-Off PAE

IEEE microwave and wireless components letters, 2018-05, Vol.28 (5), p.446-448

2018

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A 38 dB Gain, Low-Loss, Flat Array Antenna for 320-400 GHz Enabled by Silicon-on-Insulator Micromachining

IEEE transactions on antennas and propagation, 2020-06, Vol.68 (6), p.4450-4458

2020

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A Compact Low-Power 28-nm FD-SOI CMOS 76-81 GHz Dual-Path Receiver With Phase Control for Automotive Applications

IEEE transactions on microwave theory and techniques, 2024-07, Vol.72 (7), p.4092-4102

2024

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Novel Snapback-Free Shorted-Anode SOI-LIGBT With Shallow Oxide Trench and Adaptive Electron Channel

IEEE transactions on electron devices, 2023-01, Vol.70 (1), p.1-6

2023

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SOI Lateral Hall Device With Deep Trench Fingers for High Sensitivity and Low Offset

IEEE electron device letters, 2024-11, Vol.45 (11), p.2166-2169

2024

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A 28-GHz SOI-CMOS Doherty Power Amplifier With a Compact Transformer-Based Output Combiner

IEEE transactions on microwave theory and techniques, 2021-06, Vol.69 (6), p.2795-2808

2021

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Symmetric BSIM-SOI-Part II: A Compact Model for Partially Depleted SOI MOSFETs

IEEE transactions on electron devices, 2024-04, Vol.71 (4), p.1-8

2024

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A Second-Order Bandpass Filter With 1.6-dB Insertion Loss and 47-dB Upper-Stopband Suppression in 45-nm SOI CMOS Technology

IEEE electron device letters, 2024-10, Vol.45 (10), p.1710-1713

2024

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Silicon Millimeter-Wave, Terahertz, and High-Speed Fiber-Optic Device and Benchmark Circuit Scaling Through the 2030 ITRS Horizon

Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening

Numerical and Experimental Investigation of TID Radiation Effects on the Breakdown Voltage of 400-V SOI NLDMOSFETs

A Silicon-On-Insulator Lateral IGBT With Segmented Trenches for Improving Short-Circuit Withstanding Capability

Improvement in U-Shaped Channel SOI Lateral IGBT for Wider Reverse Bias Safe Operating Area

Influence of Termination Isolation Deep-Oxide Trenches on Short-Circuit Capability in Silicon-On-Insulator Lateral IGBT

An Efficient Breakdown Characterization for D/T-RESURF SOI LDMOS Using Important Structure Parameters Selection Technique

Design insights into RF/analog and linearity/distortion of spacer engineered multi‐fin SOI FET for terahertz applications

High-sensitivity and wide-range refractive index sensing based on the envelope spectrum of the subwavelength grating waveguide racetrack microring resonator

Novel SOI LDMOS Without RESURF Effect by Flexible Substrate for Flexible Electronic Systems

Giving an Account of Oneself

A 200-GHz Power Amplifier With 18.7-dBm P sat in 45-nm CMOS SOI: A Model-Based Large-Signal Approach on Cascaded Series-Connected Power Amplification

Society and the Adolescent Self-Image

Design of E- and W-Band Low-Noise Amplifiers in 22-nm CMOS FD-SOI

TID Effect of MOSFETs in SOI BCD Process and its Hardening Technique

Total-Ionizing-Dose Radiation-Induced Dual-Channel Leakage Current at Unclosed Edge Termination for High Voltage SOI LDMOS

A 1.7-dB Minimum NF, 22-32-GHz Low-Noise Feedback Amplifier With Multistage Noise Matching in 22-nm FD-SOI CMOS

28 GHz Doherty Power Amplifier in CMOS SOI With 28% Back-Off PAE

A 38 dB Gain, Low-Loss, Flat Array Antenna for 320-400 GHz Enabled by Silicon-on-Insulator Micromachining

A Compact Low-Power 28-nm FD-SOI CMOS 76-81 GHz Dual-Path Receiver With Phase Control for Automotive Applications

Novel Snapback-Free Shorted-Anode SOI-LIGBT With Shallow Oxide Trench and Adaptive Electron Channel

SOI Lateral Hall Device With Deep Trench Fingers for High Sensitivity and Low Offset

A 28-GHz SOI-CMOS Doherty Power Amplifier With a Compact Transformer-Based Output Combiner

Symmetric BSIM-SOI-Part II: A Compact Model for Partially Depleted SOI MOSFETs

A Second-Order Bandpass Filter With 1.6-dB Insertion Loss and 47-dB Upper-Stopband Suppression in 45-nm SOI CMOS Technology

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