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Nitrogen-doped graphene by microwave plasma chemical vapor deposition

Thin solid films, 2013-01, Vol.528, p.269-273

2013

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The Role of Surface Passivation in Controlling Ge Nanowire Faceting

Nano letters, 2015-12, Vol.15 (12), p.8211-8216

2015

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Silicon nanowhiskers grown on 〈111〉Si substrates by molecular-beam epitaxy

Applied physics letters, 2004-06, Vol.84 (24), p.4968-4970

2004

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Improvement of near-infrared absorption linewidth in AlGaN/GaN superlattices by optimization of delta-doping location

Applied physics letters, 2012-09, Vol.101 (10)

2012

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Aperiodic SiSn/Si multilayers for thermoelectric applications

Journal of crystal growth, 2014-04, Vol.392, p.49-51

2014

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Growth phenomena of Si and Si/Ge nanowires on Si (1 1 1) by molecular beam epitaxy

Journal of crystal growth, 2006-04, Vol.290 (1), p.6-10

2006

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Segregation of Sb in SiGe heterostructures grown by molecular beam epitaxy: Interdependence of growth conditions and structure parameters

Journal of crystal growth, 2014-06, Vol.396, p.66-70

2014

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Double-walled carbon nanotubes fabricated by a hydrogen arc discharge method

Carbon (New York), 2001-01, Vol.39 (5), p.761-770

2001

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Gold-enhanced oxidation of MBE-grown silicon nanowires

Semiconductor science and technology, 2008-07, Vol.23 (7), p.075040

2008

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Threading dislocations in epitaxial ferroelectric PbZr0.2Ti0.8O3 films and their effect on polarization backswitching

Philosophical magazine (Abingdon, England), 2006-10, Vol.86 (28), p.4477-4486

2006

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Rapid synthesis of few-layer graphene over Cu foil

Carbon (New York), 2012-04, Vol.50 (4), p.1546-1553

2012

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Shell-like formation of self-organized InAs/GaAs quantum dots

Physical review. B, Condensed matter and materials physics, 2005, Vol.71 (4), p.045325.1-045325.7

2005

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Topotaxial formation of titanium-rich barium titanates during solid state reactions on (110) TiO2 (rutile) and (001) BaTiO3 single crystals

Solid state sciences, 2008-06, Vol.10 (6), p.702-708

2008

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Dramatic enhancement of near-infrared intersubband absorption in c-plane AlInN/GaN superlattices

Applied physics letters, 2016-03, Vol.108 (12)

2016

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Room-temperature light emission from a highly strained Si/Ge superlattice

Applied physics letters, 2003-10, Vol.83 (15), p.3084-3086

2003

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Switching properties of self-assembled ferroelectric memory cells

Applied physics letters, 1999-08, Vol.75 (8), p.1158-1160

1999

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0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode In0.75Ga0.25As MOSFET

IEEE electron device letters, 2009-07, Vol.30 (7), p.700-702

2009

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Sn-rich cubic phase nanocrystals in a SiGe/Si(001) quantum well

Journal of crystal growth, 2015-09, Vol.425, p.172-176

2015

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Substrate temperature dependence of structure and resistivity of SrRuO3 thin films grown by pulsed laser deposition on (100) SrTiO3

Journal of materials research, 1999-11, Vol.14 (11), p.4385-4394

1999

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0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode \hbox\hbox\hbox MOSFET

IEEE electron device letters, 2009-07, Vol.30 (7), p.700-702

2009

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Control system of spacecraft solar array drive assembly actuator

Omskij naučnyj vestnik, 2019-11 (167), p.72-76

2019

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Initial growth stages of epitaxial BaTiO3 films on vicinal SrTiO3 (001) substrate surfaces

Journal of applied physics, 2002-06, Vol.91 (12), p.10157-10162

2002

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Effect of gallium nitride template layer strain on the growth of InxGa1-xN∕GaN multiple quantum well light emitting diodes

Journal of applied physics, 2004-08, Vol.96 (3), p.1381-1386

2004

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Comparison of the top-down and bottom-up approach to fabricate nanowire-based silicon/germanium heterostructures

Thin solid films, 2010-02, Vol.518 (9), p.2555-2561

2010

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Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H–SiC (1 1 2¯ 0)

Journal of crystal growth, 2007-03, Vol.300 (1), p.83-89

2007

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Nitrogen-doped graphene by microwave plasma chemical vapor deposition

The Role of Surface Passivation in Controlling Ge Nanowire Faceting

Silicon nanowhiskers grown on 〈111〉Si substrates by molecular-beam epitaxy

Improvement of near-infrared absorption linewidth in AlGaN/GaN superlattices by optimization of delta-doping location

Aperiodic SiSn/Si multilayers for thermoelectric applications

Growth phenomena of Si and Si/Ge nanowires on Si (1 1 1) by molecular beam epitaxy

Segregation of Sb in SiGe heterostructures grown by molecular beam epitaxy: Interdependence of growth conditions and structure parameters

Double-walled carbon nanotubes fabricated by a hydrogen arc discharge method

Gold-enhanced oxidation of MBE-grown silicon nanowires

Threading dislocations in epitaxial ferroelectric PbZr0.2Ti0.8O3 films and their effect on polarization backswitching

Rapid synthesis of few-layer graphene over Cu foil

Shell-like formation of self-organized InAs/GaAs quantum dots

Topotaxial formation of titanium-rich barium titanates during solid state reactions on (110) TiO2 (rutile) and (001) BaTiO3 single crystals

Dramatic enhancement of near-infrared intersubband absorption in c-plane AlInN/GaN superlattices

Room-temperature light emission from a highly strained Si/Ge superlattice

Switching properties of self-assembled ferroelectric memory cells

0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode In0.75Ga0.25As MOSFET

Sn-rich cubic phase nanocrystals in a SiGe/Si(001) quantum well

Substrate temperature dependence of structure and resistivity of SrRuO3 thin films grown by pulsed laser deposition on (100) SrTiO3

0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode \hbox\hbox\hbox MOSFET

Control system of spacecraft solar array drive assembly actuator

Initial growth stages of epitaxial BaTiO3 films on vicinal SrTiO3 (001) substrate surfaces

Effect of gallium nitride template layer strain on the growth of InxGa1-xN∕GaN multiple quantum well light emitting diodes

Comparison of the top-down and bottom-up approach to fabricate nanowire-based silicon/germanium heterostructures

Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H–SiC (1 1 2¯ 0)

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